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Jonathan Forbes
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Evaluation of long-term reliability and overcurrent capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs during narrow current pulsed conditions
M Kim, JJ Forbes, EA Hirsch, J Schrock, S Lacouture, A Bilbao, SB Bayne, ...
IEEE Transactions on Plasma Science 48 (11), 3962-3967, 2020
122020
Analysis of a new 15-kV SiC n-GTO under pulsed power applications
M Kim, T Tsoi, J Forbes, AV Bilbao, S Lacouture, S Bayne, H O'Brien, ...
2019 IEEE Pulsed Power & Plasma Science (PPPS), 1-4, 2019
82019
Analysis of Commercial off-the-Shelf 1200 V Silicon Carbide Mosfets Under Short Circuit Conditions
J Forbes, F Salcedo, C Tchoupe-Nono, S Bayne
2019 IEEE Pulsed Power & Plasma Science (PPPS), 1-4, 2019
22019
Prediction and verification of storm surge during Hurricane Sandy with the NWS SLOSH model
C Forbes, J Rhome, C Mattocks, A Taylor
31st Conf. on Hurricanes and Tropical Meteorology, 2014
22014
Surge current analysis of commercial off-the-shelf 1200 V silicon carbide JBS diodes and MOSFET body diodes
J Forbes, F Salcedo, C Tchoupe-Nono, R Gale, S Bayne
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2018
12018
Reconfigurable high voltage load for pulsed power applications
M Kim, JJ Forbes, AV Bilbao, JA Schrock, SB Bayne
2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-3, 2017
12017
Investigation into the Reliability of Commercial 1.2-kV SiC MPS Diodes under Surge Current and Avalanche Events
F Salcedo, J Forbes, S Bayne, R Singh
2019 IEEE Pulsed Power & Plasma Science (PPPS), 1-4, 2019
2019
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