Mike Jennings
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P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ...
Materials Today Physics 3, 118-126, 2017
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ...
Journal of applied physics 100 (11), 2006
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 2013
p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
E Chikoidze, C Sartel, I Madaci, H Mohamed, C Vilar, B Ballesteros, ...
Crystal Growth & Design 20 (4), 2535-2546, 2020
Characterization and modeling of nn Si∕ SiC heterojunction diodes
A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ...
Journal of applied physics 102 (1), 2007
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ...
IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A Fontserč, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 2011
Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
MR Jennings, A Pérez-Tomás, M Davies, D Walker, L Zhu, P Losee, ...
Solid-state electronics 51 (5), 797-801, 2007
Si∕ SiC heterojunctions fabricated by direct wafer bonding
MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ...
Electrochemical and Solid-State Letters 11 (11), H306, 2008
Enhanced field effect mobility on 4H-SiC by oxidation at 1500 C
SM Thomas, YK Sharma, MA Crouch, CA Fisher, A Perez-Tomas, ...
IEEE Journal of the Electron Devices Society 2 (5), 114-117, 2014
High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
A Pérez-Tomás, MR Jennings, M Davis, V Shah, T Grasby, JA Covington, ...
Microelectronics Journal 38 (12), 1233-1237, 2007
Analysis of inhomogeneous Ge/SiC heterojunction diodes
PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ...
Journal of Applied Physics 106 (9), 2009
Si/SiC bonded wafer: A route to carbon free SiO2 on SiC
A Pérez-Tomás, M Lodzinski, OJ Guy, MR Jennings, M Placidi, J Llobet, ...
Applied Physics Letters 94 (10), 2009
Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors
SM Thomas, MR Jennings, YK Sharma, CA Fisher, P Mawby
Materials Science Forum 778, 599-602, 2014
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
A Pérez-Tomás, A Fontserč, MR Jennings, PM Gammon
Materials science in semiconductor processing 16 (5), 1336-1345, 2013
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
A Fontserč, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ...
Microelectronic engineering 88 (10), 3140-3144, 2011
High-temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs
DP Hamilton, MR Jennings, A Pérez-Tomás, SAO Russell, SA Hindmarsh, ...
IEEE Transactions on Power Electronics 32 (10), 7967-7979, 2016
Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
A Perez-Tomas, E Chikoidze, Y Dumont, MR Jennings, SO Russell, ...
Materials Today Energy 14, 100350, 2019
Study of a novel Si/SiC hetero-junction MOSFET
L Chen, OJ Guy, MR Jennings, P Igic, SP Wilks, PA Mawby
Solid-state electronics 51 (5), 662-666, 2007
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
Z Chi, JJ Asher, MR Jennings, E Chikoidze, A Pérez-Tomás
Materials 15 (3), 1164, 2022
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