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M. Goorsky
M. Goorsky
Verified email at seas.ucla.edu
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Cited by
Cited by
Year
The optoelectronic role of chlorine in CH3NH3PbI3(Cl)-based perovskite solar cells
Q Chen, H Zhou, Y Fang, AZ Stieg, TB Song, HH Wang, X Xu, Y Liu, S Lu, ...
Nature communications 6 (1), 7269, 2015
5182015
Thermal conductivity of symmetrically strained Si/Ge superlattices
T Borca-Tasciuc, W Liu, J Liu, T Zeng, DW Song, CD Moore, G Chen, ...
Superlattices and microstructures 28 (3), 199-206, 2000
3682000
Surface ligand management for stable FAPbI3 perovskite quantum dot solar cells
J Xue, JW Lee, Z Dai, R Wang, S Nuryyeva, ME Liao, SY Chang, L Meng, ...
Joule 2 (9), 1866-1878, 2018
2302018
Synthesis of Si1− yCy alloys by molecular beam epitaxy
SS Iyer, K Eberl, MS Goorsky, FK LeGoues, JC Tsang, F Cardone
Applied physics letters 60 (3), 356-358, 1992
1751992
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer
Y Alaskar, S Arafin, D Wickramaratne, MA Zurbuchen, L He, J McKay, ...
Advanced Functional Materials 24 (42), 6629-6638, 2014
1722014
Ultrahigh and broad spectral photodetectivity of an organic–inorganic hybrid phototransistor for flexible electronics
YS Rim, Y Yang, SH Bae, H Chen, C Li, MS Goorsky, Y Yang
Advanced Materials 27 (43), 6885-6891, 2015
1702015
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
TJ De Lyon, JM Woodall, MS Goorsky, PD Kirchner
Applied physics letters 56 (11), 1040-1042, 1990
1701990
Experimental observation of high intrinsic thermal conductivity of AlN
Z Cheng, YR Koh, A Mamun, J Shi, T Bai, K Huynh, L Yates, Z Liu, R Li, ...
Physical Review Materials 4 (4), 044602, 2020
1462020
Surface reconstruction of halide perovskites during post-treatment
S Tan, T Huang, I Yavuz, R Wang, MH Weber, Y Zhao, M Abdelsamie, ...
Journal of the American Chemical Society 143 (18), 6781-6786, 2021
1432021
Low thermal boundary resistance interfaces for GaN-on-diamond devices
L Yates, J Anderson, X Gu, C Lee, T Bai, M Mecklenburg, T Aoki, ...
ACS applied materials & interfaces 10 (28), 24302-24309, 2018
1382018
Direct visualization of thermal conductivity suppression due to enhanced phonon scattering near individual grain boundaries
A Sood, R Cheaito, T Bai, H Kwon, Y Wang, C Li, L Yates, T Bougher, ...
Nano letters 18 (6), 3466-3472, 2018
1122018
Thermal conductivity of nanoporous bismuth thin films
DW Song, WN Shen, B Dunn, CD Moore, MS Goorsky, T Radetic, ...
Applied Physics Letters 84 (11), 1883-1885, 2004
1112004
Heterogeneous integration at fine pitch (≤ 10 µm) using thermal compression bonding
AA Bajwa, SC Jangam, S Pal, N Marathe, T Bai, T Fukushima, M Goorsky, ...
2017 IEEE 67th electronic components and technology conference (ECTC), 1276-1284, 2017
1082017
Integration of polycrystalline Ga2O3 on diamond for thermal management
Z Cheng, VD Wheeler, T Bai, J Shi, MJ Tadjer, T Feygelson, KD Hobart, ...
Applied Physics Letters 116 (6), 2020
1032020
A surfactant-mediated relaxed graded layer with a very low threading dislocation density and smooth surface
JL Liu, CD Moore, GD U’ren, YH Luo, Y Lu, G Jin, SG Thomas, ...
Applied Physics Letters 75 (11), 1586-1588, 1999
1001999
Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite
JW Lee, S Tan, TH Han, R Wang, L Zhang, C Park, M Yoon, C Choi, M Xu, ...
Nature communications 11 (1), 5514, 2020
992020
Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces
Z Cheng, F Mu, T You, W Xu, J Shi, ME Liao, Y Wang, K Huynh, T Suga, ...
ACS Applied Materials & Interfaces 12 (40), 44943-44951, 2020
992020
Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire (0001)
D Feiler, RS Williams, AA Talin, H Yoon, MS Goorsky
Journal of crystal growth 171 (1-2), 12-20, 1997
961997
Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon
L Gao, RL Woo, B Liang, M Pozuelo, S Prikhodko, M Jackson, N Goel, ...
Nano letters 9 (6), 2223-2228, 2009
952009
Chemical mechanical polishing of GaN
S Hayashi, T Koga, MS Goorsky
Journal of The Electrochemical Society 155 (2), H113, 2007
932007
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