Joseph W. Lyding
Joseph W. Lyding
Professor of Electrical and Computer Engineering, University of Illinois
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Cited by
Cited by
The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons
KA Ritter, JW Lyding
Nature materials 8 (3), 235-242, 2009
Atomic-scale desorption through electronic and vibrational excitation mechanisms
TC Shen, C Wang, GC Abeln, JR Tucker, JW Lyding, P Avouris, ...
Science 268 (5217), 1590-1592, 1995
Nanoscale patterning and oxidation of H‐passivated Si (100)‐2× 1 surfaces with an ultrahigh vacuum scanning tunneling microscope
JW Lyding, TC Shen, JS Hubacek, JR Tucker, GC Abeln
Applied physics letters 64 (15), 2010-2012, 1994
Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition
JD Wood, SW Schmucker, AS Lyons, E Pop, JW Lyding
Nano letters 11 (11), 4547-4554, 2011
Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
JW Lyding, K Hess, IC Kizilyalli
Applied Physics Letters 68 (18), 2526-2528, 1996
Silicon-based molecular nanotechnology
MC Hersam, NP Guisinger, JW Lyding
Nanotechnology 11 (2), 70, 2000
Cryogenic UHV-STM study of hydrogen and deuterium desorption from Si (100)
ET Foley, AF Kam, JW Lyding, P Avouris
Physical Review Letters 80 (6), 1336, 1998
Cofacial assembly of partially oxidized metallamacrocycles as an approach to controlling lattice architecture in low-dimensional molecular solids. Chemical, structural …
BN Diel, T Inabe, JW Lyding, KF Schoch Jr, CR Kannewurf, TJ Marks
Journal of the American Chemical Society 105 (6), 1551-1567, 1983
Breaking individual chemical bonds via STM-induced excitations
P Avouris, RE Walkup, AR Rossi, HC Akpati, P Nordlander, TC Shen, ...
Surface science 363 (1-3), 368-377, 1996
STM-induced H atom desorption from Si (100): isotope effects and site selectivity
P Avouris, RE Walkup, AR Rossi, TC Shen, GC Abeln, JR Tucker, ...
Chemical Physics Letters 257 (1-2), 148-154, 1996
Giant isotope effect in hot electron degradation of metal oxide silicon devices
K Hess, IC Kizilyalli, JW Lyding
IEEE Transactions on Electron Devices 45 (2), 406-416, 1998
Atomic-scale evidence for potential barriers and strong carrier scattering at graphene grain boundaries: a scanning tunneling microscopy study
JC Koepke, JD Wood, D Estrada, ZY Ong, KT He, E Pop, JW Lyding
ACS nano 7 (1), 75-86, 2013
Annealing free, clean graphene transfer using alternative polymer scaffolds
JD Wood, GP Doidge, EA Carrion, JC Koepke, JA Kaitz, I Datye, ...
Nanotechnology 26 (5), 055302, 2015
Rev. Sci. Instrum.
JW Lyding, S Skala, JS Hubacek, R Brockenbrough, G Gammie
Rev. Sci. Instrum 59, 1897-1902, 1988
InxGa1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
PK Mohseni, A Behnam, JD Wood, CD English, JW Lyding, E Pop, X Li
Nano letters 13 (3), 1153-1161, 2013
Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability
IC Kizilyalli, JW Lyding, K Hess
IEEE Electron Device Letters 18 (3), 81-83, 1997
Laterally extended atomically precise graphene nanoribbons with improved electrical conductivity for efficient gas sensing
M Mehdi Pour, A Lashkov, A Radocea, X Liu, T Sun, A Lipatov, ...
Nature communications 8 (1), 820, 2017
Scanning tunneling microscopy study and nanomanipulation of graphene-coated water on mica
KT He, JD Wood, GP Doidge, E Pop, JW Lyding
Nano letters 12 (6), 2665-2672, 2012
Ultrahigh-vacuum scanning tunneling microscopy and spectroscopy of single-walled carbon nanotubes on hydrogen-passivated Si (100) surfaces
PM Albrecht, JW Lyding
Applied Physics Letters 83 (24), 5029-5031, 2003
Computer automated charge transport measurement system
JW Lyding, HO Marcy, TJ Marks, CR Kannewurf
IEEE transactions on instrumentation and measurement 37 (1), 76-80, 1988
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