| Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus G Long, D Maryenko, J Shen, S Xu, J Hou, Z Wu, WK Wong, T Han, J Lin, ... Nano letters 16 (12), 7768-7773, 2016 | 318 | 2016 |
| Zero-field superconducting diode effect in small-twist-angle trilayer graphene JX Lin, P Siriviboon, HD Scammell, S Liu, D Rhodes, K Watanabe, ... Nature Physics 18 (10), 1221-1227, 2022 | 213 | 2022 |
| Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides S Xu, Z Wu, H Lu, Y Han, G Long, X Chen, T Han, W Ye, Y Wu, J Lin, ... 2D Materials 3 (2), 021007, 2016 | 139 | 2016 |
| Spin-orbit–driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene JX Lin, YH Zhang, E Morissette, Z Wang, S Liu, D Rhodes, K Watanabe, ... Science 375 (6579), 437-441, 2022 | 133 | 2022 |
| Isolation and Characterization of Few-Layer Manganese Thiophosphite G Long, T Zhang, X Cai, J Hu, C Cho, S Xu, J Shen, Z Wu, T Han, J Lin, ... ACS nano 11 (11), 11330-11336, 2017 | 118 | 2017 |
| Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides Z Wu, S Xu, H Lu, A Khamoshi, GB Liu, T Han, Y Wu, J Lin, G Long, Y He, ... Nature communications 7, 12955, 2016 | 117 | 2016 |
| Intrinsic valley Hall transport in atomically thin MoS2 Z Wu, BT Zhou, X Cai, P Cheung, GB Liu, M Huang, J Lin, T Han, L An, ... Nature communications 10 (1), 611, 2019 | 113 | 2019 |
| Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications YC Lin, R Torsi, R Younas, CL Hinkle, AF Rigosi, HM Hill, K Zhang, ... ACS nano, 2023 | 93 | 2023 |
| van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ... Nano letters 15 (4), 2645-2651, 2015 | 70 | 2015 |
| Odd-Integer Quantum Hall States and Giant Spin Susceptibility in -Type Few-Layer S Xu, J Shen, G Long, Z Wu, Z Bao, CC Liu, X Xiao, T Han, J Lin, Y Wu, ... Physical review letters 118 (6), 067702, 2017 | 62 | 2017 |
| Effects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-Layer MoS2 X Han, J Lin, J Liu, N Wang, D Pan The Journal of Physical Chemistry C 123 (23), 14797-14802, 2019 | 56 | 2019 |
| Determining Interaction Enhanced Valley Susceptibility in Spin-Valley-Locked MoS2 J Lin, T Han, B Piot, Z Wu, S Xu, G Long, L An, P Cheung, PP Zheng, ... Nano Letters, 2019 | 47 | 2019 |
| Bridging the gap between atomically thin semiconductors and metal leads X Cai, Z Wu, X Han, Y Chen, S Xu, J Lin, T Han, P He, X Feng, L An, R Shi, ... Nature Communications 13 (1), 1777, 2022 | 42 | 2022 |
| Ambipolar quantum transport in few-layer black phosphorus G Long, D Maryenko, S Pezzini, S Xu, Z Wu, T Han, J Lin, C Cheng, Y Cai, ... Physical Review B 96 (15), 155448, 2017 | 32 | 2017 |
| Detection of interlayer interaction in few-layer graphene Z Wu, Y Han, J Lin, W Zhu, M He, S Xu, X Chen, H Lu, W Ye, T Han, Y Wu, ... Physical Review B 92 (7), 075408, 2015 | 31 | 2015 |
| A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment Z Wu, Y Guo, Y Guo, R Huang, S Xu, J Song, H Lu, Z Lin, Y Han, H Li, ... Nanoscale 8 (5), 2594-2600, 2016 | 26 | 2016 |
| Probing Defect‐Induced Midgap States in MoS2 Through Graphene–MoS2 Heterostructures Y Han, Z Wu, S Xu, X Chen, L Wang, Y Wang, W Xiong, T Han, W Ye, ... Advanced Materials Interfaces 2 (8), 1500064, 2015 | 25 | 2015 |
| Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport G Long, S Xu, J Shen, J Hou, Z Wu, T Han, J Lin, WK Wong, Y Cai, R Lortz, ... 2D Materials 3 (3), 031001, 2016 | 22 | 2016 |
| Negative compressibility in graphene-terminated black phosphorus heterostructures Y Wu, X Chen, Z Wu, S Xu, T Han, J Lin, B Skinner, Y Cai, Y He, C Cheng, ... Physical Review B 93 (3), 035455, 2016 | 22 | 2016 |
| Probing the electronic states and impurity effects in black phosphorus vertical heterostructures X Chen, L Wang, Y Wu, H Gao, Y Wu, G Qin, Z Wu, Y Han, S Xu, T Han, ... 2D Materials 3 (1), 015012, 2016 | 19 | 2016 |
