| Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates Q Cao, H Kim, N Pimparkar, JP Kulkarni, C Wang, M Shim, K Roy, ... Nature 454 (7203), 495-500, 2008 | 1396 | 2008 |
| A 160 mV robust Schmitt trigger based subthreshold SRAM JP Kulkarni, K Kim, K Roy IEEE Journal of Solid-State Circuits 42 (10), 2303-2313, 2007 | 607 | 2007 |
| Enabling the internet of things: From integrated circuits to integrated systems M Alioto Springer, 2017 | 337 | 2017 |
| Fundamentals of III-V semiconductor MOSFETs S Oktyabrsky, DY Peide Springer, 2010 | 317 | 2010 |
| Ultralow-voltage process-variation-tolerant Schmitt-trigger-based SRAM design JP Kulkarni, K Roy IEEE transactions on very large scale integration (VLSI) systems 20 (2), 319-332, 2011 | 239 | 2011 |
| Variation-tolerant ultra low-power heterojunction tunnel FET SRAM design V Saripalli, S Datta, V Narayanan, JP Kulkarni 2011 IEEE/ACM International Symposium on Nanoscale Architectures, 45-52, 2011 | 145 | 2011 |
| A 0.45–1 V fully-integrated distributed switched capacitor DC-DC converter with high density MIM capacitor in 22 nm tri-gate CMOS R Jain, BM Geuskens, ST Kim, MM Khellah, J Kulkarni, JW Tschanz, V De IEEE Journal of Solid-State Circuits 49 (4), 917-927, 2014 | 116 | 2014 |
| 16.2 eDRAM-CIM: Compute-in-memory design with reconfigurable embedded-dynamic-memory array realizing adaptive data converters and charge-domain computing S Xie, C Ni, A Sayal, P Jain, F Hamzaoglu, JP Kulkarni 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 248-250, 2021 | 106 | 2021 |
| A 160 mV, fully differential, robust schmitt trigger based sub-threshold SRAM JP Kulkarni, K Kim, K Roy Proceedings of the 2007 international symposium on Low power electronics and …, 2007 | 102 | 2007 |
| Postsilicon voltage guard-band reduction in a 22 nm graphics execution core using adaptive voltage scaling and dynamic power gating M Cho, ST Kim, C Tokunaga, C Augustine, JP Kulkarni, K Ravichandran, ... IEEE Journal of Solid-State Circuits 52 (1), 50-63, 2016 | 94 | 2016 |
| Enabling wide autonomous DVFS in a 22 nm graphics execution core using a digitally controlled fully integrated voltage regulator ST Kim, YC Shih, K Mazumdar, R Jain, JF Ryan, C Tokunaga, ... IEEE Journal of Solid-State Circuits 51 (1), 18-30, 2015 | 90 | 2015 |
| Process variation tolerant SRAM array for ultra low voltage applications JP Kulkarni, K Kim, SP Park, K Roy Proceedings of the 45th annual Design Automation Conference, 108-113, 2008 | 88 | 2008 |
| PVT-and-aging adaptive wordline boosting for 8T SRAM power reduction A Raychowdhury, B Geuskens, J Kulkarni, J Tschanz, K Bowman, ... 2010 IEEE International Solid-State Circuits Conference-(ISSCC), 352-353, 2010 | 83 | 2010 |
| Buried Power Rails and Back-side Power Grids: ArmŽ CPU Power Delivery Network Design Beyond 5nm D. Prasad, S. S. Teja Nibhanupudi, S. Das, O. Zografos, B. Chehab, S. Sarkar ... IEEE International Electron Device Meeting (IEDM), 2019 | 72 | 2019 |
| A 12.08-TOPS/W all-digital time-domain CNN engine using bi-directional memory delay lines for energy efficient edge computing A Sayal, SST Nibhanupudi, S Fathima, JP Kulkarni IEEE Journal of Solid-State Circuits 55 (1), 60-75, 2019 | 58 | 2019 |
| 5.6 Mb/mm 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 … JP Kulkarni, J Keane, KH Koo, S Nalam, Z Guo, E Karl, K Zhang IEEE Journal of Solid-State Circuits 52 (1), 229-239, 2016 | 58* | 2016 |
| A read-disturb-free, differential sensing 1R/1W port, 8T bitcell array JP Kulkarni, A Goel, P Ndai, K Roy IEEE transactions on very large scale integration (VLSI) systems 19 (9 …, 2010 | 57 | 2010 |
| Capacitive-coupling wordline boosting with self-induced VCCcollapse for write VMINreduction in 22-nm 8T SRAM J Kulkarni, B Geuskens, T Karnik, M Khellah, J Tschanz, V De 2012 IEEE International Solid-State Circuits Conference, 234-236, 2012 | 50 | 2012 |
| Methods and systems to selectively boost an operating voltage of, and controls to an 8T bit-cell array and/or other logic blocks JP Kulkarni, BM Geuskens, J Tschanz, VK De, MM Khellah US Patent 9,299,395, 2016 | 45 | 2016 |
| A 0.45–1V fully integrated reconfigurable switched capacitor step-down DC-DC converter with high density MIM capacitor in 22nm tri-gate CMOS R Jain, B Geuskens, M Khellah, S Kim, J Kulkarni, J Tschanz, V De 2013 Symposium on VLSI Circuits, C174-C175, 2013 | 44 | 2013 |
Kaushik RoyProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
