Sonia Conesa-Boj
Sonia Conesa-Boj
Associate Professor, Kavli Institute of Nanoscience, Quantum Nanoscience department, TU Delft
Verified email at - Homepage
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Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ...
Physical Review B 80 (24), 245325, 2009
Self-assembled quantum dots in a nanowire system for quantum photonics
M Heiss, Y Fontana, A Gustafsson, G Wüst, C Magen, DD O’regan, ...
Nature materials 12 (5), 439-444, 2013
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects
I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ...
Physical review B 80 (24), 245324, 2009
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
Ballistic superconductivity in semiconductor nanowires
H Zhang, Ö Gül, S Conesa-Boj, MP Nowak, M Wimmer, K Zuo, V Mourik, ...
Nature communications 8 (1), 16025, 2017
Hexagonal silicon realized
HIT Hauge, MA Verheijen, S Conesa-Boj, T Etzelstorfer, M Watzinger, ...
Nano letters 15 (9), 5855-5860, 2015
Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts
L Yu, B O’Donnell, PJ Alet, S Conesa-Boj, F Peiro, J Arbiol, ...
Nanotechnology 20 (22), 225604, 2009
Hard superconducting gap in InSb nanowires
O Gül, H Zhang, FK de Vries, J van Veen, K Zuo, V Mourik, ...
Nano letters 17 (4), 2690-2696, 2017
III–V nanowire arrays: growth and light interaction
M Heiss, E Russo-Averchi, A Dalmau-Mallorquí, G Tütüncüoğlu, ...
Nanotechnology 25 (1), 014015, 2013
Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires
M Heigoldt, J Arbiol, D Spirkoska, JM Rebled, S Conesa-Boj, G Abstreiter, ...
Journal of Materials Chemistry 19 (7), 840-848, 2009
Gold-free ternary III–V antimonide nanowire arrays on silicon: twin-free down to the first bilayer
S Conesa-Boj, D Kriegner, XL Han, S Plissard, X Wallart, J Stangl, ...
Nano letters 14 (1), 326-332, 2014
Modulation doping of GaAs/AlGaAs core–shell nanowires with effective defect passivation and high electron mobility
JL Boland, S Conesa-Boj, P Parkinson, G Tütüncüoglu, F Matteini, ...
Nano letters 15 (2), 1336-1342, 2015
Analysis of the atomic layer deposited Al2O3 field-effect passivation in black silicon
G Von Gastrow, R Alcubilla, P Ortega, M Yli-Koski, S Conesa-Boj, ...
Solar Energy Materials and Solar Cells 142, 29-33, 2015
Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires
I Zardo, L Yu, S Conesa-Boj, S Estradé, PJ Alet, J Rössler, M Frimmer, ...
Nanotechnology 20 (15), 155602, 2009
Carrier confinement in GaN/Al x Ga 1− x N nanowire heterostructures (0< x≤ 1)
F Furtmayr, J Teubert, P Becker, S Conesa-Boj, JR Morante, A Chernikov, ...
Physical Review B 84 (20), 205303, 2011
Catalyst-free nanowires with axial InxGa1− xAs/GaAs heterostructures
M Heiß, A Gustafsson, S Conesa-Boj, F Peiró, JR Morante, G Abstreiter, ...
Nanotechnology 20 (7), 075603, 2009
Single-crystalline hexagonal silicon–germanium
HIT Hauge, S Conesa-Boj, MA Verheijen, S Koelling, EPAM Bakkers
Nano Letters 17 (1), 85-90, 2017
Boosting hole mobility in coherently strained [110]-oriented Ge–Si core–shell nanowires
S Conesa-Boj, A Li, S Koelling, M Brauns, J Ridderbos, TT Nguyen, ...
Nano letters 17 (4), 2259-2264, 2017
Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires
AM Graham, P Corfdir, M Heiss, S Conesa-Boj, E Uccelli, AF i Morral, ...
Physical Review B 87 (12), 125304, 2013
Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition
I Zardo, S Conesa-Boj, S Estradé, L Yu, F Peiro, P Roca i Cabarrocas, ...
Applied Physics A 100, 287-296, 2010
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