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Robert A Reed
Robert A Reed
Bestätigte E-Mail-Adresse bei vanderbilt.edu
Titel
Zitiert von
Zitiert von
Jahr
Monte Carlo simulation of single event effects
RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ...
IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010
2832010
Impact of low-energy proton induced upsets on test methods and rate predictions
BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ...
IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009
2242009
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
1972005
Radiation effects in advanced multiple gate and silicon-on-insulator transistors
E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ...
IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013
1522013
Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits
PE Dodd, JR Schwank, MR Shaneyfelt, JA Felix, P Paillet, ...
IEEE Transactions on Nuclear Science 54 (6), 2303-2311, 2007
1462007
Muon-induced single event upsets in deep-submicron technology
BD Sierawski, MH Mendenhall, RA Reed, MA Clemens, RA Weller, ...
IEEE Transactions on Nuclear Science 57 (6), 3273-3278, 2010
1452010
Impact of ion energy and species on single event effects analysis
RA Reed, RA Weller, MH Mendenhall, JM Lauenstein, KM Warren, ...
IEEE Transactions on Nuclear Science 54 (6), 2312-2321, 2007
1412007
Multiple-bit upset in 130 nm CMOS technology
AD Tipton, JA Pellish, RA Reed, RD Schrimpf, RA Weller, MH Mendenhall, ...
IEEE Transactions on Nuclear Science 53 (6), 3259-3264, 2006
1402006
A single-event-hardened phase-locked loop fabricated in 130 nm CMOS
TD Loveless, LW Massengill, BL Bhuva, WT Holman, RA Reed, ...
IEEE transactions on nuclear science 54 (6), 2012-2020, 2007
1352007
Heavy ion and proton-induced single event multiple upset
RA Reed, MA Carts, PW Marshall, CJ Marshall, O Musseau, PJ McNulty, ...
IEEE Transactions on Nuclear Science 44 (6), 2224-2229, 1997
1341997
Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS
S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, ...
IEEE Transactions on Nuclear Science 54 (6), 2407-2412, 2007
1312007
The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process
JR Ahlbin, MJ Gadlage, DR Ball, AW Witulski, BL Bhuva, RA Reed, ...
IEEE Transactions on Nuclear Science 57 (6), 3380-3385, 2010
1192010
Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates
PW Marshall, MA Carts, A Campbell, D McMorrow, S Buchner, R Stewart, ...
IEEE Transactions on Nuclear Science 47 (6), 2669-2674, 2000
1192000
Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes
MJ Gadlage, JR Ahlbin, B Narasimham, BL Bhuva, LW Massengill, ...
IEEE Transactions on Nuclear Science 57 (6), 3336-3341, 2010
1172010
Mitigation techniques for single-event-induced charge sharing in a 90-nm bulk CMOS process
OA Amusan, LW Massengill, MP Baze, BL Bhuva, AF Witulski, JD Black, ...
IEEE Transactions on device and Materials Reliability 9 (2), 311-317, 2009
1172009
Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
P Marshall, M Carts, S Currie, R Reed, B Randall, K Fritz, K Kennedy, ...
IEEE transactions on nuclear science 52 (6), 2446-2454, 2005
1112005
Characterizing SRAM single event upset in terms of single and multiple node charge collection
JD Black, DR Ball Ii, WH Robinson, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 55 (6), 2943-2947, 2008
1102008
Emerging radiation hardness assurance (RHA) issues: a NASA approach for space flight programs
KA LaBel, AH Johnston, JL Barth, RA Reed, CE Barnes
IEEE Transactions on Nuclear Science 45 (6), 2727-2736, 1998
1091998
Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs
F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009
1082009
Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future
RA Reed, J Kinnison, JC Pickel, S Buchner, PW Marshall, S Kniffin, ...
IEEE Transactions on Nuclear Science 50 (3), 622-634, 2003
1072003
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