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Li Ye
Li Ye
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Title
Cited by
Cited by
Year
Proper scaling of the anomalous Hall effect
Y Tian, L Ye, X Jin
Physical review letters 103 (8), 087206, 2009
4272009
Temperature dependence of the intrinsic anomalous Hall effect in nickel
L Ye, Y Tian, X Jin, D Xiao
Physical Review B 85 (22), 220403, 2012
962012
Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures
L Ye, DB Gopman, L Rehm, D Backes, G Wolf, T Ohki, AF Kirichenko, ...
Journal of Applied Physics 115 (17), 17C725, 2014
482014
Enhancement of the anomalous Hall effect in Ni thin films by artificial interface modification
J Xu, Y Li, D Hou, L Ye, X Jin
Applied Physics Letters 102 (16), 162401, 2013
292013
A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory
L Lang, Y Jiang, F Lu, C Wang, Y Chen, AD Kent, L Ye
Applied Physics Letters 116 (2), 022409, 2020
252020
A cryogenic spin-torque memory element with precessional magnetization dynamics
GE Rowlands, CA Ryan, L Ye, L Rehm, D Pinna, AD Kent, TA Ohki
Scientific reports 9 (1), 803, 2019
252019
Accessing different spin-disordered states using first-order reversal curves
RK Dumas, PK Greene, DA Gilbert, L Ye, C Zha, J ┼kerman, K Liu
Physical Review B 90 (10), 104410, 2014
212014
A new reversal mode in exchange coupled antiferromagnetic/ferromagnetic disks: distorted viscous vortex
DA Gilbert, L Ye, A Varea, S Agramunt-Puig, N Del Valle, C Navau, ...
Nanoscale 7 (21), 9878-9885, 2015
192015
Evidence of the side jump mechanism in the anomalous Hall effect in paramagnets
Y Li, D Hou, L Ye, Y Tian, J Xu, G Su, X Jin
Europhysics Letters 110 (2), 27002, 2015
142015
State diagram of an orthogonal spin transfer spin valve device
L Ye, G Wolf, D Pinna, GD Chaves-O'Flynn, AD Kent
Journal of Applied Physics 117 (19), 193902, 2015
112015
State diagram of an orthogonal spin transfer spin valve device
L Ye, G Wolf, D Pinna, GD Chaves-O'Flynn, AD Kent
Journal of Applied Physics 117 (19), 193902, 2015
112015
Field-free deterministic writing of spin-orbit torque magnetic tunneling junction by unipolar current
T Yang, M Yang, L Zhao, J Gao, Q Xiang, W Li, F Luo, L Ye, J Luo
IEEE Electron Device Letters 43 (5), 709-712, 2022
22022
Enhancement of Magnetic and Electric Transport Performance of Perpendicular Spin-Orbit Torque Magnetic Tunnel Junction by Stop-on-MgO Etching Process
L Zhao, M Yang, J Gao, T Yang, Y Cui, J Xu, J Li, Q Xiang, W Li, F Luo, ...
IEEE Electron Device Letters, 2023
2023
Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current
T Yang, M Yang, L Zhao, J Gao, Q Xiang, W Li, F Luo, L Ye, J Luo
arXiv preprint arXiv:2111.11833, 2021
2021
Coherent spin-transfer precession switching in orthogonal spin-torque devices
GE Rowlands, CA Ryan, L Ye, L Rehm, D Pinna, AD Kent, TA Ohki
arXiv preprint arXiv:1711.10575, 2017
2017
Coherent spin-transfer precession switching in orthogonal spin-torque devices
C Ryan, G Rowlands, D Pinna, L Ye, L Rehm, V Sluka, A Kent, T Ohki
APS March Meeting Abstracts 2016, P18. 007, 2016
2016
Bipolar switching in an orthogonal spin transfer spin valve device
L Ye, G Wolf, D Pinna, GD Chaves, AD Kent
arXiv preprint arXiv:1408.4494, 2014
2014
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