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Ron Schrimpf
Ron Schrimpf
Professor of Electrical Engineering, Vanderbilt University
Bestätigte E-Mail-Adresse bei vanderbilt.edu
Titel
Zitiert von
Zitiert von
Jahr
Charge collection and charge sharing in a 130 nm CMOS technology
OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ...
IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006
4872006
Response of advanced bipolar processes to ionizing radiation
EW Enlow, RL Pease, W Combs, RD Schrimpf, RN Nowlin
IEEE transactions on nuclear science 38 (6), 1342-1351, 1991
4141991
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
3751994
Physical model for enhanced interface-trap formation at low dose rates
SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
2942002
Monte Carlo simulation of single event effects
RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ...
IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010
2862010
Defect generation by hydrogen at the Si-SiO2 interface
SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
2442001
Charge separation for bipolar transistors
SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE Transactions on Nuclear Science 40 (6), 1276-1285, 1993
2381993
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2
ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
2352002
ELDRS in bipolar linear circuits: A review
RL Pease, RD Schrimpf, DM Fleetwood
2008 European Conference on Radiation and Its Effects on Components and …, 2008
2332008
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies
B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ...
IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007
2292007
Impact of low-energy proton induced upsets on test methods and rate predictions
BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ...
IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009
2272009
Single event transient pulse widths in digital microcircuits
MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ...
IEEE transactions on nuclear science 51 (6), 3285-3290, 2004
2222004
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
2122002
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ...
IEEE transactions on nuclear science 52 (6), 2125-2131, 2005
1992005
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
1992003
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf
IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996
1991996
Trends in the total-dose response of modern bipolar transistors
RN Nowlin, EW Enlow, RD Schrimpf, WE Combs
IEEE Transactions on Nuclear Science 39 (6), 2026-2035, 1992
1971992
Radiation effects and soft errors in integrated circuits and electronic devices
RD Schrimpf, DM Fleetwood
World Scientific, 2004
1872004
The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2
CJ Nicklaw, ZY Lu, DM Fleetwood, RD Schrimpf, ST Pantelides
IEEE Transactions on Nuclear Science 49 (6), 2667-2673, 2002
1842002
Reactions of hydrogen with Si-SiO2 interfaces
ST Pantelides, SN Rashkeev, R Buczko, DM Fleetwood, RD Schrimpf
IEEE Transactions on Nuclear Science 47 (6), 2262-2268, 2000
1832000
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