The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD D Kim, H Kang, JM Kim, H Kim Applied surface science 257 (8), 3776-3779, 2011 | 157 | 2011 |
True material limit of power devices—Applied to 2-D superjunction MOSFET H Kang, F Udrea IEEE Transactions on Electron Devices 65 (4), 1432-1439, 2018 | 59 | 2018 |
n-ZnO: N/p-Si nanowire photodiode prepared by atomic layer deposition H Kang, J Park, T Choi, H Jung, KH Lee, S Im, H Kim Applied Physics Letters 100 (4), 2012 | 47 | 2012 |
Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel H Kang, CS Lee, DY Kim, J Kim, W Choi, H Kim Applied Catalysis B: Environmental 104 (1-2), 6-11, 2011 | 46 | 2011 |
Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition KY Ko, H Kang, W Lee, CW Lee, J Park, HS Lee, S Im, HG Kim, SH Kim, ... Materials Science in Semiconductor Processing 33, 154-160, 2015 | 22 | 2015 |
Material limit of power devices—Applied to asymmetric 2-D superjunction MOSFET H Kang, F Udrea IEEE Transactions on Electron Devices 65 (8), 3326-3332, 2018 | 21 | 2018 |
High efficiency n-ZnO/p-Si core–shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface KY Ko, H Kang, J Kim, W Lee, HS Lee, S Im, JY Kang, JM Myoung, ... Materials science in semiconductor processing 27, 297-302, 2014 | 21 | 2014 |
Static and dynamic figures of merits (FOM) for superjunction MOSFETs H Kang, F Udrea 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 19 | 2019 |
ZnO homojunction core–shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition KY Ko, H Kang, J Park, BW Min, HS Lee, S Im, JY Kang, JM Myoung, ... Sensors and Actuators A: Physical 210, 197-204, 2014 | 19 | 2014 |
Theory of 3-D superjunction MOSFET H Kang, F Udrea IEEE Transactions on Electron Devices 66 (12), 5254-5259, 2019 | 17 | 2019 |
The FinFET effect in silicon carbide MOSFETs F Udrea, K Naydenov, H Kang, T Kato, E Kagoshima, T Nishiwaki, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 16 | 2021 |
Enhanced performance of 50 nm ultra-narrow-body silicon carbide MOSFETs based on FinFET effect T Kato, Y Fukuoka, H Kang, K Hamada, A Onogi, H Fujiwara, T Ito, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 16 | 2020 |
Analytic model of specific ON-state resistance for superjunction MOSFETs with an oxide pillar H Kang, F Udrea IEEE Electron Device Letters 40 (5), 761-764, 2019 | 13 | 2019 |
Experimental demonstration, challenges, and prospects of the vertical SiC FinFET F Udrea, K Naydenov, H Kang, T Kato, E Kagoshima, H Fujioka, H Tomita, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 12 | 2022 |
True origin of gate ringing in superjunction MOSFETs: Device view H Kang, F Udrea IEEE Transactions on Power Electronics 36 (5), 5362-5370, 2020 | 12 | 2020 |
On the specific on-state resistance of superjunction MOSFETs with a compensated pillar H Kang, F Udrea IEEE Electron Device Letters 39 (12), 1904-1907, 2018 | 12 | 2018 |
Trench angle: A key design factor for a deep trench superjunction MOSFET H Kang, J Lee, K Lee, Y Choi Semiconductor Science and Technology 30 (12), 125008, 2015 | 12 | 2015 |
Dynamic CGD and dV/dt in Superjunction MOSFETs H Kang, F Udrea IEEE Transactions on Electron Devices 67 (4), 1523-1529, 2020 | 10 | 2020 |
On the quasi-saturation in state-of-the-art power MOSFETs H Kang, F Udrea IEEE Electron Device Letters 40 (5), 754-756, 2019 | 8 | 2019 |
Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs H Kang, EM Findlay, F Udrea IEEE Transactions on Electron Devices 67 (6), 2478-2481, 2020 | 7 | 2020 |