Follow
Hyemin Kang
Hyemin Kang
Assistant professor at KENTECH (Korea Institute of Energy Technology)
Verified email at kentech.ac.kr
Title
Cited by
Cited by
Year
The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD
D Kim, H Kang, JM Kim, H Kim
Applied surface science 257 (8), 3776-3779, 2011
1572011
True material limit of power devices—Applied to 2-D superjunction MOSFET
H Kang, F Udrea
IEEE Transactions on Electron Devices 65 (4), 1432-1439, 2018
592018
n-ZnO: N/p-Si nanowire photodiode prepared by atomic layer deposition
H Kang, J Park, T Choi, H Jung, KH Lee, S Im, H Kim
Applied Physics Letters 100 (4), 2012
472012
Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel
H Kang, CS Lee, DY Kim, J Kim, W Choi, H Kim
Applied Catalysis B: Environmental 104 (1-2), 6-11, 2011
462011
Nitrogen-doped ZnO/n-Si core–shell nanowire photodiode prepared by atomic layer deposition
KY Ko, H Kang, W Lee, CW Lee, J Park, HS Lee, S Im, HG Kim, SH Kim, ...
Materials Science in Semiconductor Processing 33, 154-160, 2015
222015
Material limit of power devices—Applied to asymmetric 2-D superjunction MOSFET
H Kang, F Udrea
IEEE Transactions on Electron Devices 65 (8), 3326-3332, 2018
212018
High efficiency n-ZnO/p-Si core–shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface
KY Ko, H Kang, J Kim, W Lee, HS Lee, S Im, JY Kang, JM Myoung, ...
Materials science in semiconductor processing 27, 297-302, 2014
212014
Static and dynamic figures of merits (FOM) for superjunction MOSFETs
H Kang, F Udrea
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
192019
ZnO homojunction core–shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition
KY Ko, H Kang, J Park, BW Min, HS Lee, S Im, JY Kang, JM Myoung, ...
Sensors and Actuators A: Physical 210, 197-204, 2014
192014
Theory of 3-D superjunction MOSFET
H Kang, F Udrea
IEEE Transactions on Electron Devices 66 (12), 5254-5259, 2019
172019
The FinFET effect in silicon carbide MOSFETs
F Udrea, K Naydenov, H Kang, T Kato, E Kagoshima, T Nishiwaki, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
162021
Enhanced performance of 50 nm ultra-narrow-body silicon carbide MOSFETs based on FinFET effect
T Kato, Y Fukuoka, H Kang, K Hamada, A Onogi, H Fujiwara, T Ito, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
162020
Analytic model of specific ON-state resistance for superjunction MOSFETs with an oxide pillar
H Kang, F Udrea
IEEE Electron Device Letters 40 (5), 761-764, 2019
132019
Experimental demonstration, challenges, and prospects of the vertical SiC FinFET
F Udrea, K Naydenov, H Kang, T Kato, E Kagoshima, H Fujioka, H Tomita, ...
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
122022
True origin of gate ringing in superjunction MOSFETs: Device view
H Kang, F Udrea
IEEE Transactions on Power Electronics 36 (5), 5362-5370, 2020
122020
On the specific on-state resistance of superjunction MOSFETs with a compensated pillar
H Kang, F Udrea
IEEE Electron Device Letters 39 (12), 1904-1907, 2018
122018
Trench angle: A key design factor for a deep trench superjunction MOSFET
H Kang, J Lee, K Lee, Y Choi
Semiconductor Science and Technology 30 (12), 125008, 2015
122015
Dynamic CGD and dV/dt in Superjunction MOSFETs
H Kang, F Udrea
IEEE Transactions on Electron Devices 67 (4), 1523-1529, 2020
102020
On the quasi-saturation in state-of-the-art power MOSFETs
H Kang, F Udrea
IEEE Electron Device Letters 40 (5), 754-756, 2019
82019
Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs
H Kang, EM Findlay, F Udrea
IEEE Transactions on Electron Devices 67 (6), 2478-2481, 2020
72020
The system can't perform the operation now. Try again later.
Articles 1–20