Tunable and sizable band gap in silicene by surface adsorption R Quhe, R Fei, Q Liu, J Zheng, H Li, C Xu, Z Ni, Y Wang, D Yu, Z Gao, ... Scientific reports 2, 2012 | 298 | 2012 |
Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu Nanoscale 6 (13), 7609-7618, 2014 | 184 | 2014 |
Half-Metallic Silicene and Germanene Nanoribbons: Towards High-Performance Spintronics Device Y Wang, J Zheng, Z Ni, R Fei, Q Liu, R Quhe, C Xu, J Zhou, Z Gao, J Lu Nano 7 (05), 1250037, 2012 | 116 | 2012 |
Does the Dirac cone exist in silicene on metal substrates? R Quhe, Y Yuan, J Zheng, Y Wang, Z Ni, J Shi, D Yu, J Yang, J Lu Scientific reports 4, 2014 | 113 | 2014 |
Graphdiyne–metal contacts and graphdiyne transistors Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ... Nanoscale 7 (5), 2116-2127, 2015 | 109 | 2015 |
Interfacial properties of bilayer and trilayer graphene on metal substrates J Zheng, Y Wang, L Wang, R Quhe, Z Ni, WN Mei, Z Gao, D Yu, J Shi, J Lu Scientific reports 3, 2013 | 102 | 2013 |
Tunable band gap in germanene by surface adsorption M Ye, R Quhe, J Zheng, Z Ni, Y Wang, Y Yuan, G Tse, J Shi, Z Gao, J Lu Physica E: Low-dimensional Systems and Nanostructures 59, 60-65, 2014 | 101 | 2014 |
Tunable band gap in few-layer graphene by surface adsorption R Quhe, J Ma, Z Zeng, K Tang, J Zheng, Y Wang, Z Ni, L Wang, Z Gao, ... Scientific reports 3, 2013 | 67 | 2013 |
All‐Metallic Vertical Transistors Based on Stacked Dirac Materials Y Wang, Z Ni, Q Liu, R Quhe, J Zheng, M Ye, D Yu, J Shi, J Yang, J Li, ... Advanced Functional Materials 25 (1), 68-77, 2015 | 65 | 2015 |
Silicene nanomesh F Pan, Y Wang, K Jiang, Z Ni, J Ma, J Zheng, R Quhe, J Shi, J Yang, ... Scientific reports 5, 2015 | 53 | 2015 |
Strong band hybridization between silicene and Ag (111) substrate Y Yuan, R Quhe, J Zheng, Y Wang, Z Ni, J Shi, J Lu Physica E: Low-dimensional Systems and Nanostructures 58, 38-42, 2014 | 48 | 2014 |
System size in relativistic heavy ion collisions W Yang-Yang, Z Lin-Jie, Y Zhong-Sheng, Z Dan-Dan, F Wei, X Ming-Mei Chinese Physics C 35 (3), 264, 2011 | 41 | 2011 |
Gate-induced half-metallicity in semihydrogenated silicene F Pan, R Quhe, Q Ge, J Zheng, Z Ni, Y Wang, Z Gao, L Wang, J Lu Physica E: Low-dimensional Systems and Nanostructures 56, 43-47, 2014 | 20 | 2014 |
Intrinsic region length scaling of heavily doped carbon nanotube p–i–n junctions Z Li, J Zheng, Z Ni, R Quhe, Y Wang, Z Gao, J Lu Nanoscale 5 (15), 6999-7004, 2013 | 19 | 2013 |
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Depressed Many-electron Effects H Zhong, Z Ni, Y Wang, M Ye, Z Song, Y Pan, R Quhe, J Yang, L Yang, ... arXiv preprint arXiv:1501.01071, 2015 | 6 | 2015 |
Vertical Transistors Based on Stacked Dirac Materials Y Wang, Z Ni, Q Liu, R Quhe, J Zheng, M Ye, D Yu, J Shi, J Yang, J Lu arXiv preprint arXiv:1408.1830, 2014 | | 2014 |