elisa vianello
elisa vianello
Scientist, CEA Leti
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Cited by
Cited by
Bio-inspired stochastic computing using binary CBRAM synapses
M Suri, D Querlioz, O Bichler, G Palma, E Vianello, D Vuillaume, ...
IEEE Transactions on Electron Devices 60 (7), 2402-2409, 2013
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...
IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015
Prototype ATLAS IBL modules using the FE-I4A front-end readout chip
Atlas Ibl Collaboration
Journal of Instrumentation 7 (11), P11010, 2012
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Spiking neural networks hardware implementations and challenges: A survey
M Bouvier, A Valentian, T Mesquida, F Rummens, M Reyboz, E Vianello, ...
ACM Journal on Emerging Technologies in Computing Systems (JETC) 15 (2), 1-35, 2019
CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications
M Suri, O Bichler, D Querlioz, G Palma, E Vianello, D Vuillaume, ...
2012 International Electron Devices Meeting, 10.3. 1-10.3. 4, 2012
3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade
C Da Via, M Boscardin, GF Dalla Betta, G Darbo, C Fleta, C Gemme, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016
Resistive memories for ultra-low-power embedded computing design
E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanovic, D Garbin, ...
2014 IEEE International Electron Devices Meeting 6, 1-6.3, 2014
In situ learning using intrinsic memristor variability via Markov chain Monte Carlo sampling
T Dalgaty, N Castellani, C Turck, KE Harabi, D Querlioz, E Vianello
Nature Electronics 4 (2), 151-161, 2021
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ...
Journal of Electroceramics 39, 21-38, 2017
HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
B Traoré, P Blaise, E Vianello, L Perniola, B De Salvo, Y Nishi
IEEE Transactions on Electron Devices 63 (1), 360-368, 2015
Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses
D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ...
2014 IEEE international electron devices meeting, 28.4. 1-28.4. 4, 2014
In-memory and error-immune differential RRAM implementation of binarized deep neural networks
M Bocquet, T Hirztlin, JO Klein, E Nowak, E Vianello, JM Portal, ...
2018 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2018
3D Sequential Integration: Application-driven technological achievements and guidelines
P Batude, L Brunet, C Fenouillet-Beranger, F Andrieu, JP Colinge, ...
2017 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2017
On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying
B Traoré, P Blaise, E Vianello, H Grampeix, S Jeannot, L Perniola, ...
IEEE Transactions on Electron Devices 62 (12), 4029-4036, 2015
Slim edges in double-sided silicon 3D detectors
M Povoli, A Bagolini, M Boscardin, GF Dalla Betta, G Giacomini, ...
Journal of Instrumentation 7 (01), C01015, 2012
Development of double-sided full-passing-column 3D sensors at FBK
G Giacomini, A Bagolini, M Boscardin, GF Dalla Betta, F Mattedi, M Povoli, ...
IEEE Transactions on Nuclear Science 60 (3), 2357-2366, 2013
Experimental investigation of 4-kb RRAM arrays programming conditions suitable for TCAM
A Grossi, E Vianello, C Zambelli, P Royer, JP Noel, B Giraud, L Perniola, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (12 …, 2018
A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Resistive Random Access Memory
KH Xue, B Traore, P Blaise, LRC Fonseca, E Vianello, G Molas, ...
IEEE Transactions on Electron Devices 61 (5), 1394-1402, 2014
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