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Jian Zhu
Jian Zhu
TDK-Headway, HGST, UC Irvine, USTC
Verified email at uci.edu
Title
Cited by
Cited by
Year
Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical Review Letters 108 (19), 197203, 2012
3072012
Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications
L Thomas, G Jan, J Zhu, H Liu, YJ Lee, S Le, RY Tong, K Pi, YJ Wang, ...
Journal of Applied Physics 115 (17), 2014
2582014
Voltage-induced switching of nanoscale magnetic tunnel junctions
JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ...
2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012
1052012
Angular dependence of the superconducting transition temperature in ferromagnet-superconductor-ferromagnet trilayers
J Zhu, IN Krivorotov, K Halterman, OT Valls
Physical review letters 105 (20), 207002, 2010
1012010
Nonadiabatic stochastic resonance of a nanomagnet excited by spin torque
X Cheng, CT Boone, J Zhu, IN Krivorotov
Physical review letters 105 (4), 47202, 2010
1012010
Resonant nonlinear damping of quantized spin waves in ferromagnetic nanowires: a spin torque ferromagnetic resonance study
CT Boone, JA Katine, JR Childress, V Tiberkevich, A Slavin, J Zhu, ...
Physical review letters 103 (16), 167601, 2009
942009
Origin of the inverse spin switch effect in superconducting spin valves
J Zhu, X Cheng, C Boone, IN Krivorotov
Physical review letters 103 (2), 27004, 2009
922009
Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories
G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, RY Tong, K Pi, YJ Wang, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical…, 2014
742014
Experimental test of an analytical theory of spin-torque-oscillator dynamics
C Boone, JA Katine, JR Childress, J Zhu, X Cheng, IN Krivorotov
Physical Review B 79 (14), 140404, 2009
712009
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications
Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015
672015
High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory
JM Iwata-Harms, G Jan, H Liu, S Serrano-Guisan, J Zhu, L Thomas, ...
Scientific reports 8 (1), 14409, 2018
452018
Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms
G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ...
2016 Ieee Symposium on Vlsi Technology, 1-2, 2016
352016
Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM
L Thomas, G Jan, S Le, YJ Lee, H Liu, J Zhu, S Serrano-Guisan, RY Tong, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.4. 1-26.4. 4, 2015
292015
Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications
G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ...
2018 IEEE Symposium on VLSI Technology, 65-66, 2018
272018
Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing
H Liu, YJ Lee, J Zhu, G Jan, R Tong, L Thomas
US Patent 9,425,387, 2016
252016
Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications
H Liu, J Zhu, K Pi, RY Tong
US Patent App. 14/278,243, 2015
242015
Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory
JM Iwata-Harms, G Jan, S Serrano-Guisan, L Thomas, H Liu, J Zhu, ...
Scientific reports 9 (1), 19407, 2019
222019
Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260 C
MC Shih, CY Wang, YH Lee, W Wang, L Thomas, H Liu, J Zhu, YJ Lee, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
212016
Implementation of a one time programmable memory using a MRAM stack design
G Jan, PK Wang, YJ Lee, J Zhu, H Liu
US Patent 9,805,816, 2017
172017
STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes
L Thomas, G Jan, S Serrano-Guisan, H Liu, J Zhu, YJ Lee, S Le, ...
2018 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2018
162018
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