Sergey Rumyantsev
Sergey Rumyantsev
Institute of High Pressure Physics
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Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe
ME Levinshtein, SL Rumyantsev, MS Shur
John Wiley & Sons, 2001
Handbook series on semiconductor parameters
M Levinshtein
World Scientific, 1997
Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe
V Bougrov, ME Levinshtein, SL Rumyantsev, A Zubrilov, MS Shur
Eds. Levinshtein ME, Rumyantsev SL, Shur MS, John Wiley & Sons, Inc., New …, 2001
Nonresonant detection of terahertz radiation in field effect transistors
W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ...
Journal of Applied Physics 91 (11), 9346-9353, 2002
Selective gas sensing with a single pristine graphene transistor
S Rumyantsev, G Liu, MS Shur, RA Potyrailo, AA Balandin
Nano letters 12 (5), 2294-2298, 2012
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
R Tauk, F Teppe, S Boubanga, D Coquillat, W Knap, YM Meziani, ...
Applied Physics Letters 89 (25), 2006
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
W Knap, F Teppe, Y Meziani, N Dyakonova, J Lusakowski, F Boeuf, ...
Applied Physics Letters 85 (4), 675-677, 2004
Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors
W Knap, Y Deng, S Rumyantsev, MS Shur
Applied physics letters 81 (24), 4637-4639, 2002
Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor
W Knap, Y Deng, S Rumyantsev, JQ Lü, MS Shur, CA Saylor, LC Brunel
Applied physics letters 80 (18), 3433-3435, 2002
Resonant and voltage-tunable terahertz detection in InGaAs∕ InP nanometer transistors
A El Fatimy, F Teppe, N Dyakonova, W Knap, D Seliuta, G Valušis, ...
Applied physics letters 89 (13), 2006
Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
F Teppe, W Knap, D Veksler, MS Shur, AP Dmitriev, VY Kachorovskii, ...
Applied Physics Letters 87 (5), 2005
Low-frequency electronic noise in the double-gate single-layer graphene transistors
G Liu, W Stillman, S Rumyantsev, Q Shao, M Shur, AA Balandin
Applied Physics Letters 95 (3), 2009
Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms
S Rumyantsev, G Liu, W Stillman, M Shur, AA Balandin
Journal of Physics: Condensed Matter 22 (39), 395302, 2010
SiC materials and devices
M Shur, SL Rumyantsev
world scientific, 2006
Origin of 1/f noise in graphene multilayers: Surface vs. volume
G Liu, S Rumyantsev, MS Shur, AA Balandin
Applied Physics Letters 102 (9), 2013
Flicker noise in bilayer graphene transistors
Q Shao, G Liu, D Teweldebrhan, AA Balandin, S Rumyantsev, MS Shur, ...
IEEE Electron Device Letters 30 (3), 288-290, 2009
Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices
R Samnakay, C Jiang, SL Rumyantsev, MS Shur, AA Balandin
Applied Physics Letters 106 (2), 2015
Terahertz detection by GaN/AlGaN transistors
A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts
J Renteria, R Samnakay, SL Rumyantsev, C Jiang, P Goli, MS Shur, ...
Applied Physics Letters 104 (15), 2014
AlGaN/GaN high electron mobility field effect transistors with low noise
ME Levinshtein, SL Rumyantsev, R Gaska, JW Yang, MS Shur
Applied physics letters 73 (8), 1089-1091, 1998
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