Xiang (Shaun) Li
Xiang (Shaun) Li
Postdoctoral Scholar, Stanford University; UCLA
Verified email at - Homepage
Cited by
Cited by
Room-temperature creation and spin–orbit torque manipulation of skyrmions in thin films with engineered asymmetry
G Yu, P Upadhyaya, X Li, W Li, SK Kim, Y Fan, KL Wong, Y Tserkovnyak, ...
Nano letters 16 (3), 1981-1988, 2016
Room-temperature skyrmion shift device for memory application
G Yu, P Upadhyaya, Q Shao, H Wu, G Yin, X Li, C He, W Jiang, X Han, ...
Nano letters 17 (1), 261-268, 2017
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
Interfacial Dzyaloshinskii-Moriya Interaction: Effect of Band Filling and Correlation with Spin Mixing Conductance
X Ma, G Yu, C Tang, X Li, C He, J Shi, KL Wang, X Li
Physical review letters 120 (15), 157204, 2018
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface
X Li, K Fitzell, D Wu, CT Karaba, A Buditama, G Yu, KL Wong, N Altieri, ...
Applied Physics Letters 110 (5), 2017
Magneto-optical investigation of spin–orbit torques in metallic and insulating magnetic heterostructures
M Montazeri, P Upadhyaya, MC Onbasli, G Yu, KL Wong, M Lang, Y Fan, ...
Nature communications 6 (1), 8958, 2015
Strain-induced modulation of perpendicular magnetic anisotropy in Ta/CoFeB/MgO structures investigated by ferromagnetic resonance
G Yu, Z Wang, M Abolfath-Beygi, C He, X Li, KL Wong, P Nordeen, H Wu, ...
Applied Physics Letters 106 (7), 2015
Current-driven perpendicular magnetization switching in Ta/CoFeB/[TaOx or MgO/TaOx] films with lateral structural asymmetry
G Yu, LT Chang, M Akyol, P Upadhyaya, C He, X Li, KL Wong, PK Amiri, ...
Applied Physics Letters 105 (10), 2014
Dzyaloshinskii-Moriya interaction across an antiferromagnet-ferromagnet interface
X Ma, G Yu, SA Razavi, SS Sasaki, X Li, K Hao, SH Tolbert, KL Wang, X Li
Physical review letters 119 (2), 027202, 2017
Interfacial control of Dzyaloshinskii-Moriya interaction in heavy metal/ferromagnetic metal thin film heterostructures
X Ma, G Yu, X Li, T Wang, D Wu, KS Olsson, Z Chu, K An, JQ Xiao, ...
Physical Review B 94 (18), 180408, 2016
Current-induced spin-orbit torque switching of perpendicularly magnetized Hf| CoFeB| MgO and Hf| CoFeB| TaOx structures
M Akyol, G Yu, JG Alzate, P Upadhyaya, X Li, KL Wong, A Ekicibil, ...
Applied Physics Letters 106 (16), 2015
Spin-orbit torques in perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO multilayer
D Wu, G Yu, CT Chen, SA Razavi, Q Shao, X Li, B Zhao, KL Wong, C He, ...
Applied Physics Letters 109 (22), 2016
Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo| CoFeB| MgO structures
X Li, G Yu, H Wu, PV Ong, K Wong, Q Hu, F Ebrahimi, P Upadhyaya, ...
Applied Physics Letters 107 (14), 2015
Write error rate and read disturbance in electric-field-controlled magnetic random-access memory
C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ...
IEEE Magnetics Letters 8, 1-5, 2016
Voltage-controlled magnetoelectric memory and logic devices
X Li, A Lee, SA Razavi, H Wu, KL Wang
MRS Bulletin 43 (12), 970-977, 2018
Spin-orbit torque from a ferromagnetic metal
H Wu, SA Razavi, Q Shao, X Li, KL Wong, Y Liu, G Yin, KL Wang
Physical Review B 99 (18), 184403, 2019
Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque
SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao
2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019
Spin-torque ferromagnetic resonance measurements utilizing spin Hall magnetoresistance in W/Co40Fe40B20/MgO structures
C He, A Navabi, Q Shao, G Yu, D Wu, W Zhu, C Zheng, X Li, QL He, ...
Applied Physics Letters 109 (20), 2016
Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier
D Chien, X Li, K Wong, MA Zurbuchen, S Robbennolt, G Yu, S Tolbert, ...
Applied Physics Letters 108 (11), 2016
Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation
L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao
IEEE Electron Device Letters 39 (3), 440-443, 2018
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