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Michihiro Shintani
Michihiro Shintani
Bestätigte E-Mail-Adresse bei kit.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
Surface-potential-based silicon carbide power MOSFET model for circuit simulation
M Shintani, Y Nakamura, K Oishi, M Hiromoto, T Hikihara, T Sato
IEEE Transactions on Power Electronics 33 (12), 10774-10783, 2018
312018
Variation-aware hardware Trojan detection through power side-channel
FS Hossain, M Shintani, M Inoue, A Orailoglu
2018 IEEE International Test Conference (ITC), 1-10, 2018
282018
On-die parameter extraction from path-delay measurements
T Takahashi, T Uezono, M Shintani, K Masu, T Sato
2009 IEEE Asian Solid-State Circuits Conference, 101-104, 2009
272009
A simulation model for SiC power MOSFET based on surface potential
Y Nakamura, M Shintani, K Oishi, T Sato, T Hikihara
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
242016
LSTA: Learning-based static timing analysis for high-dimensional correlated on-chip variations
S Bian, M Shintani, M Hiromoto, T Sato
Proceedings of the 54th Annual Design Automation Conference 2017, 1-6, 2017
232017
A high power curve tracer for characterizing full operational range of SiC power transistors
Y Nakamura, M Shintani, T Sato, T Hikihara
2016 International Conference on Microelectronic Test Structures (ICMTS), 90-94, 2016
192016
A variability-aware adaptive test flow for test quality improvement
M Shintani, T Uezono, T Takahashi, K Hatayama, T Aikyo, K Masu, T Sato
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2014
182014
An adaptive test for parametric faults based on statistical timing information
M Shintani, T Uezono, T Takahashi, H Ueyama, T Sato, K Hatayama, ...
2009 Asian Test Symposium, 151-156, 2009
182009
Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFET
M Shintani, Y Nakamura, M Hiromoto, T Hikihara, T Sato
Japanese Journal of Applied Physics 56 (4S), 04CR07, 2017
172017
Organic current mirror PUF for improved stability against device aging
Z Qin, M Shintani, K Kuribara, Y Ogasahara, T Sato
IEEE Sensors Journal 20 (14), 7569-7578, 2020
162020
Workload-aware worst path analysis of processor-scale NBTI degradation
S Bian, M Shintani, S Morita, H Awano, M Hiromoto, T Sato
Proceedings of the 26th edition on Great Lakes Symposium on VLSI, 203-208, 2016
152016
Small delay fault model for intra-gate resistive open defects
M Arai, A Suto, K Iwasaki, K Nakano, M Shintani, K Hatayama, T Aikyo
2009 27th IEEE VLSI Test Symposium, 27-32, 2009
152009
Artificial neural network based test escape screening using generative model
M Shintani, M Inoue, Y Nakamura
2018 IEEE International Test Conference (ITC), 1-8, 2018
142018
Path clustering for adaptive test
T Uezono, T Takahashi, M Shintani, K Hatayama, K Masu, H Ochi, T Sato
2010 28th VLSI Test Symposium (VTS), 15-20, 2010
132010
Nonlinear delay-table approach for full-chip NBTI degradation prediction
S Bian, M Shintani, S Morita, M Hiromoto, T Sato
2016 17th International Symposium on Quality Electronic Design (ISQED), 307-312, 2016
122016
Wafer-level variation modeling for multi-site RF IC testing via hierarchical Gaussian process
M Shintani, M Inoue, T Nakamura, M Kajiyama, M Eiki
2021 IEEE International Test Conference (ITC), 103-112, 2021
112021
Feasibility of a low-power, low-voltage complementary organic thin film transistor buskeeper physical unclonable function
Y Ogasahara, K Kuribara, M Shintani, T Sato
Japanese Journal of Applied Physics 58 (SB), SBBG03, 2019
112019
Accurate recycled FPGA detection using an exhaustive-fingerprinting technique assisted by WID process variation modeling
F Ahmed, M Shintani, M Inoue
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2020
102020
Low cost recycled FPGA detection using virtual probe technique
F Ahmed, M Shintani, M Inoue
2019 IEEE International Test Conference in Asia (ITC-Asia), 103-108, 2019
102019
Statistical extraction of normally and lognormally distributed model parameters for power MOSFETs
H Tsukamoto, M Shintani, T Sato
IEEE Transactions on Semiconductor Manufacturing 33 (2), 150-158, 2020
92020
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