James Thomas Griffiths
James Thomas Griffiths
Research associate, University of Cambridge
Verified email at - Homepage
Cited by
Cited by
Perovskite crystals for tunable white light emission
S Pathak, N Sakai, F Wisnivesky Rocca Rivarola, SD Stranks, J Liu, ...
Chemistry of Materials 27 (23), 8066-8075, 2015
Rational approach to guest confinement inside MOF cavities for low-temperature catalysis
T Wang, L Gao, J Hou, SJA Herou, JT Griffiths, W Li, J Dong, S Gao, ...
Nature communications 10 (1), 1340, 2019
Bottom-up formation of carbon-based structures with multilevel hierarchy from MOF–guest polyhedra
T Wang, HK Kim, Y Liu, W Li, JT Griffiths, Y Wu, S Laha, KD Fong, ...
Journal of the American Chemical Society 140 (19), 6130-6136, 2018
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
Photon Reabsorption in Mixed CsPbCl3:CsPbI3 Perovskite Nanocrystal Films for Light-Emitting Diodes
NJLK Davis, FJ de la Peña, M Tabachnyk, JM Richter, RD Lamboll, ...
The Journal of Physical Chemistry C 121 (7), 3790-3796, 2017
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied physics letters 106 (7), 072104, 2015
Synthesis, Characterization, and Morphological Control of Cs2CuCl4 Nanocrystals
EP Booker, JT Griffiths, L Eyre, C Ducati, NC Greenham, NJLK Davis
The Journal of Physical Chemistry C 123 (27), 16951-16956, 2019
Surface zeta potential and diamond seeding on gallium nitride films
S Mandal, ELH Thomas, C Middleton, L Gines, JT Griffiths, MJ Kappers, ...
ACS omega 2 (10), 7275-7280, 2017
Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping
JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ...
Nano letters 15 (11), 7639-7643, 2015
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
Ultramicroscopy 176, 93-98, 2017
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
FS Choi, JT Griffiths, C Ren, KB Lee, ZH Zaidi, PA Houston, I Guiney, ...
Journal of Applied Physics 124 (5), 2018
Emission Properties and Ultrafast Carrier Dynamics of CsPbCl3 Perovskite Nanocrystals
R Ahumada-Lazo, JA Alanis, P Parkinson, DJ Binks, SJO Hardman, ...
The Journal of Physical Chemistry C 123 (4), 2651-2657, 2019
Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
JT Griffiths, CX Ren, PM Coulon, ED Le Boulbar, CG Bryce, I Girgel, ...
Applied Physics Letters 110 (17), 2017
The microstructure of non-polar a-plane (11 20) InGaN quantum wells
JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ...
Journal of Applied Physics 119 (17), 175703, 2016
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
JT Griffiths, T Zhu, F Oehler, RM Emery, WY Fu, BPL Reid, RA Taylor, ...
APL materials 2 (12), 2014
An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire
D Sutherland, F Oehler, T Zhu, JT Griffiths, TJ Badcock, P Dawson, ...
physica status solidi (c) 11 (3‐4), 541-544, 2014
Optical studies of non‐polar m‐plane () InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN
D Sutherland, T Zhu, JT Griffiths, F Tang, P Dawson, D Kundys, F Oehler, ...
physica status solidi (b) 252 (5), 965-970, 2015
Analysis of Defect-Related Inhomogeneous Electroluminescence in InGaN/GaN QW LEDs
C Ren, B Rouet-Leduc, J Griffiths, E Bohacek, M Wallace, P Edwards, ...
Superlattices and Microstructures, 2016
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
S Schulz, DSP Tanner, EP O'Reilly, MA Caro, F Tang, JT Griffiths, ...
Applied Physics Letters 109 (223102), 2016
Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold
J Griffiths, S Zhang, J Lhuillier, D Zhu, WY Fu, A Howkins, I Boyd, D Stowe, ...
Journal of Applied Physics 120, 2016
The system can't perform the operation now. Try again later.
Articles 1–20