| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 443 | 2020 |
| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 219 | 2018 |
| Recombination coefficients of GaN-based laser diodes WG Scheibenzuber, UT Schwarz, L Sulmoni, J Dorsaz, JF Carlin, ... Journal of Applied Physics 109 (9), 2011 | 125 | 2011 |
| Broadband blue superluminescent light-emitting diodes based on GaN E Feltin, A Castiglia, G Cosendey, L Sulmoni, JF Carlin, N Grandjean, ... Applied Physics Letters 95 (8), 2009 | 100 | 2009 |
| Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm M Guttmann, F Mehnke, B Belde, F Wolf, C Reich, L Sulmoni, T Wernicke, ... Japanese Journal of Applied Physics 58 (SC), SCCB20, 2019 | 73 | 2019 |
| Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates N Lobo-Ploch, F Mehnke, L Sulmoni, HK Cho, M Guttmann, J Glaab, ... Applied Physics Letters 117 (11), 2020 | 67 | 2020 |
| Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire N Susilo, E Ziffer, S Hagedorn, L Cancellara, C Netzel, NL Ploch, S Wu, ... Photonics Research 8 (4), 589-594, 2020 | 67 | 2020 |
| MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs C Kuhn, L Sulmoni, M Guttmann, J Glaab, N Susilo, T Wernicke, ... Photonics Research 7 (5), B7-B11, 2019 | 66 | 2019 |
| Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs J Glaab, N Lobo-Ploch, HK Cho, T Filler, H Gundlach, M Guttmann, ... Scientific reports 11 (1), 14647, 2021 | 59 | 2021 |
| Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers L Sulmoni, F Mehnke, A Mogilatenko, M Guttmann, T Wernicke, M Kneissl Photonics Research 8 (8), 1381-1387, 2020 | 48 | 2020 |
| Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm F Mehnke, L Sulmoni, M Guttmann, T Wernicke, M Kneissl Applied Physics Express 12 (1), 012008, 2019 | 47 | 2019 |
| DFB laser diodes based on GaN using 10th order laterally coupled surface gratings JH Kang, H Wenzel, V Hoffmann, E Freier, L Sulmoni, RS Unger, ... IEEE Photonics Technology Letters 30 (3), 231-234, 2017 | 41 | 2017 |
| Effect of the GaN: Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs N Susilo, J Enslin, L Sulmoni, M Guttmann, U Zeimer, T Wernicke, ... physica status solidi (a) 215 (10), 1700643, 2018 | 30 | 2018 |
| Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs M Guttmann, A Susilo, L Sulmoni, N Susilo, E Ziffer, T Wernicke, M Kneissl Journal of Physics D: Applied Physics 54 (33), 335101, 2021 | 26 | 2021 |
| Static and dynamic properties of multi-section InGaN-based laser diodes L Sulmoni, JM Lamy, J Dorsaz, A Castiglia, JF Carlin, WG Scheibenzuber, ... Journal of Applied Physics 112 (10), 2012 | 24 | 2012 |
| Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs J Glaab, J Ruschel, N Lobo Ploch, HK Cho, F Mehnke, L Sulmoni, ... Journal of Applied Physics 131 (1), 2022 | 22 | 2022 |
| Self-pulsation at zero absorber bias in GaN-based multisection laser diodes WG Scheibenzuber, C Hornuss, UT Schwarz, L Sulmoni, J Dorsaz, ... Applied physics express 4 (6), 062702, 2011 | 22 | 2011 |
| Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings JH Kang, H Wenzel, E Freier, V Hoffmann, O Brox, J Fricke, L Sulmoni, ... Optics letters 45 (4), 935-938, 2020 | 21 | 2020 |
| Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes WG Scheibenzuber, UT Schwarz, L Sulmoni, JF Carlin, A Castiglia, ... Applied Physics Letters 97 (18), 2010 | 21 | 2010 |
| Electrical properties of (11-22) Si: AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy HM Foronda, DA Hunter, M Pietsch, L Sulmoni, A Muhin, S Graupeter, ... Applied Physics Letters 117 (22), 2020 | 20 | 2020 |
