Folgen
Jianxing Zhang
Jianxing Zhang
Bestätigte E-Mail-Adresse bei mails.tsinghua.edu.cn
Titel
Zitiert von
Zitiert von
Jahr
Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity
Y Li, J Zhang, D Huang, H Sun, F Fan, J Feng, Z Wang, CZ Ning
Nature nanotechnology 12 (10), 987-992, 2017
3182017
Excitonic complexes and optical gain in two-dimensional molybdenum ditelluride well below the Mott transition
Z Wang, H Sun, Q Zhang, J Feng, J Zhang, Y Li, CZ Ning
Light: Science & Applications 9 (1), 39, 2020
472020
Optical properties and light-emission device applications of 2-D layered semiconductors
Y Li, H Sun, L Gan, J Zhang, J Feng, D Zhang, CZ Ning
Proceedings of the IEEE 108 (5), 676-703, 2019
302019
Reconstructing Local Profile of Exciton–Emission Wavelengths across a WS2 Bubble beyond the Diffraction Limit
D Zhang, L Gan, J Zhang, R Zhang, Z Wang, J Feng, H Sun, CZ Ning
ACS nano 14 (6), 6931-6937, 2020
192020
Single crystal erbium compound nanowires as high gain material for on-chip light source applications
Z Liu, H Sun, L Yin, Y Li, J Zhang, CZ Ning
Frontiers of Optoelectronics 9, 312-317, 2016
52016
Threshold-like Superlinear Accumulation of Excitons in a Gated Monolayer Transition Metal Dichalcogenide
Z Wang, H Sun, Q Zhang, J Zhang, J Xu, J Tang, CZ Ning
ACS Photonics 10 (2), 412-420, 2023
22023
Room-temperature Continuous-wave Lasing from Monolayer Molybdenum Ditelluride with a Silicon Nanobeam Cavity
Y Li, J Zhang, D Huang, H Sun, F Fan, J Feng, Z Wang, CZ Ning
arXiv preprint arXiv:1701.07921, 2017
22017
Fabrication of 1D photonic crystal on a single erbium chloride silicate nanowire and microcavity laser design
Z Liu, H Sun, Y Li, J Zhang, CZ Ning
CLEO: Science and Innovations, SW4I. 2, 2015
22015
Cavity enhanced trion emission from a bilayer MoTe2 on silicon
J Zhang, Z Zhong, Y Li, J Feng, L Gan, CZ Ning
CLEO: Science and Innovations, STh1J. 7, 2019
12019
External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes
J Feng, Y Li, S Fu, J Zhang, Z Zhong, H Sun, L Gan, CZ Ning
2019 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2019
12019
Record-high optical gain in a single crystal erbium chloride silicate nanowire at 1532 nm
H Sun, Z Liu, X Feng, Y Zheng, Y Li, J Zhang, CZ Ning
CLEO: Science and Innovations, SM4R. 3, 2016
12016
Super-linear Behavior of Exciton Emission in Electrically-gated Two-dimensional Material
Z Wang, H Sun, Q Zhang, J Zhang, J Xu, J Tang, CZ Ning
CLEO: QELS_Fundamental Science, FW2Q. 3, 2021
2021
Electroluminescence by impact excitation of excitons in a monolayer WSe2
J Feng, Y Li, S Fu, J Zhang, H Sun, L Gan, CZ Ning
CLEO: Science and Innovations, JW2F. 5, 2020
2020
Electrically pumped light-emitting device based on MoTe2 directly integrated with doped silicon
J Zhang, Y Li, S Fu, J Feng, CZ Ning
CLEO: Applications and Technology, JTh2F. 19, 2020
2020
Observation of trionic optical gain in electrically gated two-dimensional molybdenum ditelluride
Z Wang, H Sun, Q Zhang, J Feng, J Zhang, Y Li, CZ Ning
2019 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2019
2019
Room-temperature operation of silicon-nanobeam laser based on exciton emission of 2D-monolayer MoTe2 (Conference Presentation)
Y Li, J Zhang, D Huang, H Sun, F Fan, J Feng, Z Wang, CZ Ning
2D Photonic Materials and Devices 10534, 105340K, 2018
2018
Tutorial on semiconductor nanolasers: from metallic cavities to 2D transition metal dichalcogenide gain materials (Conference Presentation)
CZ Ning, Y Li, J Zhang, D Huang, H Sun
Physics and Simulation of Optoelectronic Devices XXVI 10526, 105260L, 2018
2018
Semiconductor nanolasers based on 2D monolayer gain media integrated with silicon waveguides
CZ Ning, Y Li, J Zhang, D Huang, H Sun, F Fan, J Feng, Z Wang, D Li, ...
Frontiers in Optics, FW6C. 1, 2017
2017
Single-cystal erbium chloride silicate nanowires with internal net gain larger than 300 dB/cm
H Sun, Y Zheng, Z Liu, L Yin, X Feng, Y Li, J Zhang, CZ Ning
2016 IEEE Photonics Conference (IPC), 214-215, 2016
2016
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–19