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William Ray II
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Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions
JA Schrock, BN Pushpakaran, AV Bilbao, WB Ray, EA Hirsch, MD Kelley, ...
IEEE Transactions on Power Electronics 31 (3), 1816-1821, 2015
982015
Low light illumination study on commercially available homojunction photovoltaic cells
J Russo, W Ray II, MS Litz
Applied energy 191, 10-21, 2017
582017
High-mobility stable 1200-V, 150-A 4H-SiC DMOSFET long-term reliability analysis under high current density transient conditions
JA Schrock, WB Ray II, K Lawson, A Bilbao, SB Bayne, SL Holt, L Cheng, ...
IEEE Transactions on Power Electronics 30 (6), 2891-2895, 2014
452014
A radioluminescent nuclear battery using volumetric configuration: 63Ni solution/ZnS: Cu, Al/InGaP
J Russo, M Litz, W Ray II, B Smith, R Moyers
Applied Radiation and Isotopes 130, 66-74, 2017
342017
Development of tritiated nitroxide for nuclear battery
J Russo, M Litz, W Ray II, GM Rosen, DI Bigio, R Fazio
Applied Radiation and Isotopes 125, 66-73, 2017
312017
Failure modes of 15-kV SiC SGTO thyristors during repetitive extreme pulsed overcurrent conditions
JA Schrock, EA Hirsch, S Lacouture, MD Kelley, AV Bilbao, WB Ray, ...
IEEE Transactions on Power Electronics 31 (12), 8058-8062, 2016
192016
High performance, large-area, 1600 V/150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications
L Cheng, AK Agarwal, M Schupbach, DA Gajewski, DJ Lichtenwalner, ...
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
192013
Analysis of GaN power MOSFET exporsure to pulsed overcurrents
WB Ray, JA Schrock, AV Bilbao, M Kelley, S Lacouture, E Hirsch, ...
2015 IEEE Pulsed Power Conference (PPC), 1-5, 2015
162015
Demonstration of a tritiated nitroxide nuclear battery
J Russo, M Litz, W Ray II, S Bayne, GM Rosen, H Cho, J Yu, DI Bigio, ...
Applied Radiation and Isotopes 144, 93-103, 2019
122019
Analysis on repetitive pulsed overcurrent operation of GaN power transistors
WB Ray, M Kim, A Bilbao, JA Schrock, SB Bayne
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
102016
Extraction of safe operating area and long term reliability of experimental silicon carbide super gate turn off thyristors
S Lacouture, JA Schrock, WB Ray, EA Hirsch, S Bayne, M Giesselmann, ...
2015 IEEE Pulsed Power Conference (PPC), 1-4, 2015
92015
Design of alpha-voltaic power source using Americium-241 (241Am) and diamond with a power density of 10 mW/cm3
J Langley, M Litz, J Russo, W Ray
US Army Research Laboratory ARL-TR-8189, 2017
82017
Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests
AV Bilbao, JA Schrock, WB Ray, MD Kelley, SB Bayne
2015 IEEE Pulsed Power Conference (PPC), 1-3, 2015
82015
Low illumination light (LIL) solar cells: Indoor and monochromatic light harvesting
JA Russo, W Ray, MS Litz, C Wu
US Army Research Laboratory, ARL-TR-7525, 2015
62015
Planar Homojunction Gallium Nitride (GaN) PiN Device Evaluated for Betavoltaic Energy Conversion: Measurement and Analysis
M Litz, W Ray, J Russo, S Kelley, J Smith
US Army Research Laboratory, 2016
52016
Modeling and simulation of a gallium nitride (GaN) betavoltaic energy converter
WI Ray, MS Litz, JA Russo, ...
US Army Research Laboratory, Adelphi (MD), Report No.: ARL‐TR‐7675, 2016
52016
Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices
AV Bilbao, JA Schrock, WB Ray, MD Kelley, SL Holt, MG Giesselmann, ...
Review of Scientific Instruments 86 (8), 2015
52015
Analysis on repetitive pulsed overcurrent operation of GaN power transistors
M Kim, KR Popp, C Tchoupe-Nono, WB Ray, AV Bilbao, JA Schrock, ...
2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-4, 2017
42017
Continuous switching of ultra-high voltage silicon carbide MOSFETs
AV Bilbao, JA Schrock, MD Kelley, E Hirsch, WB Ray, SB Bayne, ...
2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2016
42016
Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications
K Lawson, J Schrock, W Ray, S Bayne, L Cheng, J Palmour, S Allen, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
42014
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