| Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions JA Schrock, BN Pushpakaran, AV Bilbao, WB Ray, EA Hirsch, MD Kelley, ... IEEE Transactions on Power Electronics 31 (3), 1816-1821, 2015 | 99 | 2015 |
| Low light illumination study on commercially available homojunction photovoltaic cells J Russo, W Ray II, MS Litz Applied energy 191, 10-21, 2017 | 58 | 2017 |
| High-mobility stable 1200-V, 150-A 4H-SiC DMOSFET long-term reliability analysis under high current density transient conditions JA Schrock, WB Ray II, K Lawson, A Bilbao, SB Bayne, SL Holt, L Cheng, ... IEEE Transactions on Power Electronics 30 (6), 2891-2895, 2014 | 45 | 2014 |
| A radioluminescent nuclear battery using volumetric configuration: 63Ni solution/ZnS: Cu, Al/InGaP J Russo, M Litz, W Ray II, B Smith, R Moyers Applied Radiation and Isotopes 130, 66-74, 2017 | 34 | 2017 |
| Development of tritiated nitroxide for nuclear battery J Russo, M Litz, W Ray II, GM Rosen, DI Bigio, R Fazio Applied Radiation and Isotopes 125, 66-73, 2017 | 31 | 2017 |
| Failure modes of 15-kV SiC SGTO thyristors during repetitive extreme pulsed overcurrent conditions JA Schrock, EA Hirsch, S Lacouture, MD Kelley, AV Bilbao, WB Ray, ... IEEE Transactions on Power Electronics 31 (12), 8058-8062, 2016 | 19 | 2016 |
| High performance, large-area, 1600 V/150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications L Cheng, AK Agarwal, M Schupbach, DA Gajewski, DJ Lichtenwalner, ... 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 19 | 2013 |
| Analysis of GaN power MOSFET exporsure to pulsed overcurrents WB Ray, JA Schrock, AV Bilbao, M Kelley, S Lacouture, E Hirsch, ... 2015 IEEE Pulsed Power Conference (PPC), 1-5, 2015 | 16 | 2015 |
| Demonstration of a tritiated nitroxide nuclear battery J Russo, M Litz, W Ray II, S Bayne, GM Rosen, H Cho, J Yu, DI Bigio, ... Applied Radiation and Isotopes 144, 93-103, 2019 | 12 | 2019 |
| Analysis on repetitive pulsed overcurrent operation of GaN power transistors WB Ray, M Kim, A Bilbao, JA Schrock, SB Bayne 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 10 | 2016 |
| Extraction of safe operating area and long term reliability of experimental silicon carbide super gate turn off thyristors S Lacouture, JA Schrock, WB Ray, EA Hirsch, S Bayne, M Giesselmann, ... 2015 IEEE Pulsed Power Conference (PPC), 1-4, 2015 | 9 | 2015 |
| Design of alpha-voltaic power source using Americium-241 (241Am) and diamond with a power density of 10 mW/cm3 J Langley, M Litz, J Russo, W Ray US Army Research Laboratory ARL-TR-8189, 2017 | 8 | 2017 |
| Analysis of advanced 20 KV/20 a silicon carbide power insulated gate bipolar transistor in resistive and inductive switching tests AV Bilbao, JA Schrock, WB Ray, MD Kelley, SB Bayne 2015 IEEE Pulsed Power Conference (PPC), 1-3, 2015 | 8 | 2015 |
| Low illumination light (LIL) solar cells: Indoor and monochromatic light harvesting JA Russo, W Ray, MS Litz, C Wu US Army Research Laboratory, ARL-TR-7525, 2015 | 6 | 2015 |
| Planar Homojunction Gallium Nitride (GaN) PiN Device Evaluated for Betavoltaic Energy Conversion: Measurement and Analysis M Litz, W Ray, J Russo, S Kelley, J Smith US Army Research Laboratory, 2016 | 5 | 2016 |
| Modeling and simulation of a gallium nitride (GaN) betavoltaic energy converter WI Ray, MS Litz, JA Russo, ... US Army Research Laboratory, Adelphi (MD), Report No.: ARL‐TR‐7675, 2016 | 5 | 2016 |
| Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices AV Bilbao, JA Schrock, WB Ray, MD Kelley, SL Holt, MG Giesselmann, ... Review of Scientific Instruments 86 (8), 2015 | 5 | 2015 |
| Analysis on repetitive pulsed overcurrent operation of GaN power transistors M Kim, KR Popp, C Tchoupe-Nono, WB Ray, AV Bilbao, JA Schrock, ... 2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-4, 2017 | 4 | 2017 |
| Continuous switching of ultra-high voltage silicon carbide MOSFETs AV Bilbao, JA Schrock, MD Kelley, E Hirsch, WB Ray, SB Bayne, ... 2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2016 | 4 | 2016 |
| Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications K Lawson, J Schrock, W Ray, S Bayne, L Cheng, J Palmour, S Allen, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 4 | 2014 |
Stephen BayneProfessor of Electrical and Computer Engineering, Texas Tech UniversityVerified email at ttu.edu
