Gengchiau Liang

Cited by

	All	Since 2020
Citations	6460	2814
h-index	40	25
i10-index	103	60

660

330

165

495

200420052006200720082009201020112012201320142015201620172018201920202021202220232024202520 53 78 95 164 140 163 231 281 292 246 292 401 338 397 411 461 492 589 542 643 87

Public access

View all

33 articles

20 articles

available

not available

Based on funding mandates

Co-authors

Xiao GongNational University of SingaporeVerified email at nus.edu.sg
Kai Tak LamPostdoctoral Associate, Department of Electrical and Computer Engineering, University of FloridaVerified email at ufl.edu
Mansoor B. A. JalilNational University of SingaporeVerified email at nus.edu.sg
Zhifeng ZhuSchool of Information Science and Technology, ShanghaiTech UniversityVerified email at shanghaitech.edu.cn
avik W ghoshProfessor, University of Virginia, Electrical EngineeringVerified email at virginia.edu
Seng Ghee TanTheoretical Physicist (Applied)Verified email at dsi.a-star.edu.sg
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Hyunsoo YangElectrical and Computer Engineering, National University of SingaporeVerified email at nus.edu.sg
Yuan DONGInstitute of Microelectronics (IME, A*Star), and National University of Singapore (NUS)Verified email at u.nus.edu
Gaurav GuptaSpin DevicesVerified email at spindevices.com
Dmitri E. NikonovDistinguished Engineer, Kepler ComputingVerified email at intel.com
Neophytos NeophytouSchool of Engineering, University of WarwickVerified email at warwick.ac.uk
Supriyo DattaProfessor, Purdue UniversityVerified email at purdue.edu
Yuan Ping FengDepartment of Physics, National University of SingaporeVerified email at nus.edu.sg
Ganesh SamudraAssociate Professor, National University of SingaporeVerified email at nus.edu.sg
Can YesilyurtNanoelectronics Research CenterVerified email at nanoelectronicsresearch.center
MINGGANG ZENGInstitute for Infocomm Research (I2R), Agency for Science, Technology and Research (A*STARVerified email at i2r.a-star.edu.sg
Jian-Sheng WangDepartment of Physics, National University of SingaporeVerified email at nus.edu.sg
Jie XiangWolf Greenfield & Sacks, P.C.Verified email at wolfgreenfield.com
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu

Gengchiau Liang

National Yang Ming Chiao Tung University

Verified email at nycu.edu.tw - Homepage

Nanoelectronics Computational Nanoelectronics Nanodevice modeling


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007	321	2007
Thermoelectric performance of mx2 (m= mo, w; x= s, se) monolayers W Huang, H Da, G Liang Journal of Applied Physics 113 (10), 2013	299	2013
All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe₂/ferromagnet heterostructures S Shi, S Liang, Z Zhu, K Cai, SD Pollard, Y Wang, J Wang, Q Wang, P He, ... Nature nanotechnology 14 (10), 945-949, 2019	264	2019
Silicon-based molecular electronics T Rakshit, GC Liang, AW Ghosh, S Datta Nano Letters 4 (10), 1803-1807, 2004	259	2004
Theoretical study of thermoelectric properties of few-layer MoS 2 and WSe 2 W Huang, X Luo, CK Gan, SY Quek, G Liang Physical Chemistry Chemical Physics 16 (22), 10866-10874, 2014	232	2014
Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets K Cai, Z Zhu, JM Lee, R Mishra, L Ren, SD Pollard, P He, G Liang, KL Teo, ... Nature Electronics 3 (1), 37-42, 2020	215	2020
Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed Y Hu, J Xiang, G Liang, H Yan, CM Lieber Nano letters 8 (3), 925-930, 2008	210	2008
Performance analysis of a Ge/Si core/shell nanowire field-effect transistor G Liang, J Xiang, N Kharche, G Klimeck, CM Lieber, M Lundstrom Nano letters 7 (3), 642-646, 2007	208	2007
Graphene-based spin caloritronics M Zeng, Y Feng, G Liang Nano letters 11 (3), 1369-1373, 2011	207	2011
High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection S Lukman, L Ding, L Xu, Y Tao, AC Riis-Jensen, G Zhang, QYS Wu, ... Nature nanotechnology 15 (8), 675-682, 2020	186	2020
Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe₄ D Kumar, CH Hsu, R Sharma, TR Chang, P Yu, J Wang, G Eda, G Liang, ... Nature Nanotechnology 16 (4), 421-425, 2021	185	2021
Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons X Ni, G Liang, JS Wang, B Li Applied Physics Letters 95 (19), 2009	177	2009
Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 2007	157	2007
Electrostatic potential profiles of molecular conductors GC Liang, AW Ghosh, M Paulsson, S Datta Physical Review B 69 (11), 115302, 2004	152	2004
Single atomically sharp lateral monolayer p‐n heterojunction solar cells with extraordinarily high power conversion efficiency ML Tsai, MY Li, JRD Retamal, KT Lam, YC Lin, K Suenaga, LJ Chen, ... Advanced Materials 29 (32), 1701168, 2017	140	2017
Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008	99	2008
Exploring low power and ultrafast memristor on p-type van der Waals SnS XF Lu, Y Zhang, N Wang, S Luo, K Peng, L Wang, H Chen, W Gao, ... Nano letters 21 (20), 8800-8807, 2021	97	2021
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015	94	2015
An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges KT Lam, G Liang Applied Physics Letters 92 (22), 2008	93	2008
A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang IEEE Electron Device Letters 31 (6), 555-557, 2010	82	2010

The system can't perform the operation now. Try again later.

Articles 1–20

Citations per year

Duplicate citations

Merged citations

Add co-authorsCo-authors

Follow

Cited by

Co-authors