Martin L. Green
Martin L. Green
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Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
ML Green, EP Gusev, R Degraeve, EL Garfunkel
Journal of Applied Physics 90 (5), 2057-2121, 2001
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
ML Green, GD Wilk
US Patent 6,797,525, 2004
Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers
ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ...
Journal of Applied Physics 92 (12), 7168-7174, 2002
The 2019 materials by design roadmap
K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ...
Journal of Physics D: Applied Physics 52 (1), 013001, 2018
Chemical vapor deposition of ruthenium and ruthenium dioxide films
ML Green, ME Gross, LE Papa, KJ Schnoes, D Brasen
Journal of the Electrochemical Society 132 (11), 2677, 1985
Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies
ML Green, CL Choi, JR Hattrick-Simpers, AM Joshi, I Takeuchi, SC Barron, ...
Applied Physics Reviews 4 (1), 2017
Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials
ML Green, I Takeuchi, JR Hattrick-Simpers
Journal of Applied Physics 113 (23), 2013
Growth and characterization of ultrathin nitrided silicon oxide films
EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green
IBM journal of research and development 43 (3), 265-286, 1999
Dielectric Films for Advanced Microelectronics
M Baklanov, M Green, K Maex
The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length
JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices
ML Ostraat, JW De Blauwe, ML Green, LD Bell, ML Brongersma, ...
Applied Physics Letters 79 (3), 433-435, 2001
Semiconductor heterostructure devices with strained semiconductor layers
D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie
US Patent 5,442,205, 1995
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
MY Ho, H Gong, GD Wilk, BW Busch, ML Green, PM Voyles, DA Muller, ...
Journal of Applied Physics 93 (3), 1477-1481, 2003
Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
ML Green, D Brasen, KW Evans‐Lutterodt, LC Feldman, K Krisch, ...
Applied physics letters 65 (7), 848-850, 1994
Field effect devices and capacitors with improved thin film dielectrics and method for making same
D Brasen, EL Garfunkel, ML Green, EP Gusev
US Patent 5,861,651, 1999
A model for the FCC→ HCP transformation, its applications, and experimental evidence
S Mahajan, ML Green, D Brasen
Metallurgical Transactions A 8 (2), 283-293, 1977
Multi-component high-K gate dielectrics for the silicon industry
L Manchanda, MD Morris, ML Green, RB Van Dover, F Klemens, ...
Microelectronic Engineering 59 (1-4), 351-359, 2001
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ...
Journal of Applied Physics 87 (9), 4449-4455, 2000
Measurement, Standards, and Data Needs for CO2 Capture Materials: A Critical Review
L Espinal, DL Poster, W Wong-Ng, AJ Allen, ML Green
Environmental science & technology 47 (21), 11960-11975, 2013
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