Chandreswar Mahata
Chandreswar Mahata
Research Professor, Division of Electronics and Electrical Engineering, Dongguk University,Republic
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Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ...
Nature Electronics 3, 638-645, 2020
Tin oxide for optoelectronic, photovoltaic and energy storage devices: a review
GK Dalapati, H Sharma, A Guchhait, N Chakrabarty, P Bamola, Q Liu, ...
Journal of materials chemistry A 9 (31), 16621-16684, 2021
Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications
C Mahata, H Algadi, J Lee, S Kim, T Lee
Measurement 151, 107095, 2020
Graphene as an atomically thin barrier to Cu diffusion into Si
J Hong, S Lee, S Lee, H Han, C Mahata, HW Yeon, B Koo, SI Kim, T Nam, ...
Nanoscale 6 (13), 7503-7511, 2014
Textile-based electronic components for energy applications: Principles, problems, and perspective
V Kaushik, J Lee, J Hong, S Lee, S Lee, J Seo, C Mahata, T Lee
Nanomaterials 5 (3), 1493-1531, 2015
Switchable water-adhesive, superhydrophobic palladium-layered silicon nanowires potentiate the angiogenic efficacy of human stem cell spheroids
J Seo, JS Lee, K Lee, D Kim, K Yang, S Shin, C Mahata, HB Jung, W Lee, ...
Adv. Mater 26 (41), 7043-7050, 2014
Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As
C Mahata, YC Byun, CH An, S Choi, Y An, H Kim
ACS Applied Materials & Interfaces 5 (10), 4195-4201, 2013
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
M Ismail, U Chand, C Mahata, J Nebhen, S Kim
Journal of Materials Science & Technology 96, 94-102, 2022
Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application
JH Ryu, C Mahata, S Kim
Journal of Alloys and Compounds 850, 156675, 2021
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
C Mahata, C Lee, Y An, MH Kim, S Bang, CS Kim, JH Ryu, S Kim, H Kim, ...
Journal of Alloys and Compounds 826, 154434, 2020
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application
MK Rahmani, M Ismail, C Mahata, S Kim
Results in Physics 18, 103325, 2020
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
M Ismail, C Mahata, S Kim
Journal of Alloys and Compounds 892, 162141, 2022
Efficient plastic recycling and remolding circular economy using the technology of trust–blockchain
S Khadke, P Gupta, S Rachakunta, C Mahata, S Dawn, M Sharma, ...
Sustainability 13 (16), 9142, 2021
Multi-level analog resistive switching characteristics in tri-layer HfO2/Al2O3/HfO2 based memristor on ITO electrode
C Mahata, M Kang, S Kim
Nanomaterials 10 (10), 2069, 2020
Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering
J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ...
ACS applied materials & interfaces 12 (30), 33908-33916, 2020
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices
JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ...
Applied Surface Science 529, 147167, 2020
Zinc tin oxide synaptic device for neuromorphic engineering
JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ...
IEEE Access 8, 130678-130686, 2020
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing
J Yang, H Cho, H Ryu, M Ismail, C Mahata, S Kim
ACS Applied Materials & Interfaces 13 (28), 33244-33252, 2021
Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors
BE Park, IK Oh, C Mahata, CW Lee, D Thompson, WJ Maeng, H Kim
Journal of Alloys and Compounds 722, 307-312, 2017
Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode
C Mahata, S Kim
Ceramics International 47, 1199-1207, 2021
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