Kurt Moen
Kurt Moen
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Zitiert von
Zitiert von
Sub-1-K operation of SiGe transistors and circuits
L Najafizadeh, JS Adams, SD Phillips, KA Moen, JD Cressler, S Aslam, ...
IEEE Electron Device Letters 30 (5), 508-510, 2009
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ...
IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009
Predictive physics-based TCAD modeling of the mixed-mode degradation mechanism in SiGe HBTs
KA Moen, PS Chakraborty, US Raghunathan, JD Cressler, H Yasuda
IEEE transactions on electron devices 59 (11), 2895-2901, 2012
Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits
L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ...
IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009
Reconciling 3-D mixed-mode simulations and measured single-event transients in SiGe HBTs
M Turowski, JA Pellish, KA Moen, A Raman, JD Cressler, RA Reed, G Niu
IEEE Transactions on Nuclear Science 57 (6), 3342-3348, 2010
Single-event response of the SiGe HBT operating in inverse-mode
SD Phillips, KA Moen, NE Lourenco, JD Cressler
IEEE transactions on Nuclear Science 59 (6), 2682-2690, 2012
Total dose and transient response of SiGe HBTs from a new 4th-Generation, 90 nm SiGe BiCMOS technology
NE Lourenco, RL Schmid, KA Moen, SD Phillips, TD England, ...
2012 IEEE Radiation Effects Data Workshop, 1-5, 2012
An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS
NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ...
IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013
Evaluating the influence of various body-contacting schemes on single event transients in 45-nm SOI CMOS
KA Moen, SD Phillips, EP Wilcox, JD Cressler, H Nayfeh, AK Sutton, ...
IEEE Transactions on Nuclear Science 57 (6), 3366-3372, 2010
Accurate modeling of single-event transients in a SiGe voltage reference circuit
KA Moen, L Najafizadeh, J Seungwoo, A Raman, M Turowski, ...
IEEE Transactions on Nuclear Science 58 (3), 877-884, 2011
An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits
TD England, R Arora, ZE Fleetwood, NE Lourenco, KA Moen, AS Cardoso, ...
IEEE Transactions on Nuclear Science 60 (6), 4405-4411, 2013
Compact modeling of the temperature dependence of parasitic resistances in SiGe HBTs down to 30 K
L Luo, G Niu, KA Moen, JD Cressler
IEEE Transactions on Electron Devices 56 (10), 2169-2177, 2009
Nickel silicide implementation for silicon-on-insulator (soi) radio frequency (rf) switch technology
PD Hurwitz, K Moen
US Patent App. 15/158,514, 2017
Wide temperature range compact modeling of SiGe HBTs for space applications
L Luo, Z Xu, G Niu, PS Chakraborty, P Cheng, D Thomas, K Moen, ...
2011 IEEE 43rd Southeastern Symposium on System Theory, 110-113, 2011
Proton-induced SEU in SiGe digital logic at cryogenic temperatures
AK Sutton, K Moen, JD Cressler, MA Carts, PW Marshall, JA Pellish, ...
Solid-state electronics 52 (10), 1652-1659, 2008
Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic
KA Moen, SD Phillips, EW Kenyon, JD Cressler
IEEE Transactions on Nuclear Science 59 (4), 958-964, 2012
Optimization of SiGe bandgap-based circuits for up to 300° C operation
DB Thomas, L Najafizadeh, JD Cressler, KA Moen, N Lourenco
Solid-State Electronics 56 (1), 47-55, 2011
Measurement and modeling of carrier transport parameters applicable to SiGe BiCMOS technology operating in extreme environments
KA Moen, JD Cressler
IEEE transactions on electron devices 57 (3), 551-561, 2010
Advances in RF foundry technology for wireless and wireline communications
P Hurwitz, R Kanawati, K Moen, E Preisler, S Chaudhry, M Racanelli
2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2016
SiGe HBT CML ring oscillator with 2.3-ps gate delay at cryogenic temperatures
J Yuan, KA Moen, JD Cressler, H Rücker, B Heinemann, W Winkler
IEEE transactions on electron devices 57 (5), 1183-1187, 2010
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