Thomas Wunderer
Thomas Wunderer
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Cited by
Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
F Habel, F Scholz, B Neubert, P Brückner, T Wunderer
US Patent 7,727,332, 2010
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ...
Applied Physics Letters 100 (2), 021101, 2012
Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates
T Wunderer, CL Chua, Z Yang, JE Northrup, NM Johnson, GA Garrett, ...
Applied Physics Express 4 (9), 092101, 2011
Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks
J Hertkorn, F Lipski, P Brückner, T Wunderer, SB Thapa, F Scholz, ...
Journal of Crystal Growth 310 (23), 4867-4870, 2008
Piezoelectric fields in quantum wells on different crystal facets
M Feneberg, F Lipski, R Sauer, K Thonke, T Wunderer, B Neubert, ...
Applied Physics Letters 89 (24), 242112, 2006
Optically pumped UV lasers grown on bulk AlN substrates
T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
Bright semipolar blue light emitting diode on side facets of selectively grown GaN stripes
T Wunderer, P Brückner, B Neubert, F Scholz, M Feneberg, F Lipski, ...
Applied physics letters 89 (4), 041121, 2006
Differential phase contrast 2.0—Opening new “fields” for an established technique
M Lohr, R Schregle, M Jetter, C Wächter, T Wunderer, F Scholz, J Zweck
Ultramicroscopy 117, 7-14, 2012
Optimization of nucleation and buffer layer growth for improved GaN quality
J Hertkorn, P Brückner, SB Thapa, T Wunderer, F Scholz, M Feneberg, ...
Journal of crystal growth 308 (1), 30-36, 2007
Three‐dimensional GaN for semipolar light emitters
T Wunderer, M Feneberg, F Lipski, J Wang, RAR Leute, S Schwaiger, ...
physica status solidi (b) 248 (3), 549-560, 2011
Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters
B Cheng, S Choi, JE Northrup, Z Yang, C Knollenberg, M Teepe, ...
Applied Physics Letters 102 (23), 231106, 2013
basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
I Tischer, M Feneberg, M Schirra, H Yacoub, R Sauer, K Thonke, ...
Physical Review B 83 (3), 035314, 2011
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Shroud for disk drive with particulate filter elements
GJ Smith
US Patent 6,654,201, 2003
Growth and coalescence behavior of semipolar (11̄22) GaN on pre‐structured r‐plane sapphire substrates
S Schwaiger, S Metzner, T Wunderer, I Argut, J Thalmair, F Lipski, ...
physica status solidi (b) 248 (3), 588-593, 2011
Planar semipolar GaN on sapphire
S Schwaiger, I Argut, T Wunderer, R Rösch, F Lipski, J Biskupek, U Kaiser, ...
Applied Physics Letters 96 (23), 231905, 2010
Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
B Neuschl, K Thonke, M Feneberg, R Goldhahn, T Wunderer, Z Yang, ...
Applied Physics Letters 103 (12), 122105, 2013
Polarized light emission from semipolar GaInN quantum wells on GaN facets
M Feneberg, F Lipski, R Sauer, K Thonke, P Brückner, B Neubert, ...
Journal of Applied Physics 101 (5), 053530, 2007
Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
JE Northrup, C Chua, M Kneissl, T Wunderer, NM Johnson
US Patent 9,252,329, 2016
Semipolar GaInN/GaN light‐emitting diodes grown on honeycomb patterned substrates
T Wunderer, J Wang, F Lipski, S Schwaiger, A Chuvilin, U Kaiser, ...
physica status solidi c 7 (7‐8), 2140-2143, 2010
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