True random number generator integration in a resistive RAM memory array using input current limitation H Aziza, J Postel-Pellerin, H Bazzi, P Canet, M Moreau, V Della Marca, ... IEEE Transactions on Nanotechnology 19, 214-222, 2020 | 48 | 2020 |
True random number generation exploiting SET voltage variability in resistive RAM memory arrays J Postel-Pellerin, H Bazzi, H Aziza, P Canet, M Moreau, V Della Marca, ... 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-5, 2019 | 18 | 2019 |
ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology H Aziza, P Canet, J Postel-Pellerin, M Moreau, JM Portal, M Bocquet 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 16 | 2017 |
Push the flash floating gate memories toward the future low energy application V Della Marca, G Just, A Regnier, JL Ogier, R Simola, S Niel, ... Solid-State Electronics 79, 210-217, 2013 | 16 | 2013 |
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories V Della Marca, J Postel-Pellerin, G Just, P Canet, JL Ogier Microelectronics Reliability 54 (9-10), 2262-2265, 2014 | 14 | 2014 |
Integrated reliability in EEPROM nonvolatile memory cell design P Canet, F Lalande, J Razafindramora, V Bouquet, J Postel-Pellerin, ... Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference, 66-69, 2004 | 11 | 2004 |
Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories J Postel-Pellerin, F Lalande, P Canet, R Bouchakour, F Jeuland, ... Microelectronics Reliability 49 (9-11), 1056-1059, 2009 | 9 | 2009 |
Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations M Chambonneau, S Souiki-Figuigui, P Chiquet, V Della Marca, ... Applied Physics Letters 110 (16), 2017 | 8 | 2017 |
Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories P Canet, J Postel-Pellerin, H Aziza Microelectronics Reliability 64, 36-41, 2016 | 8 | 2016 |
Modeling charge variation during data retention of MLC Flash memories J Postel-Pellerin, F Lalande, P Canet, R Bouchakour, F Jeuland, ... Microelectronics Reliability 49 (9-11), 1060-1063, 2009 | 8 | 2009 |
State: A test structure for rapid and reliable prediction of resistive ram endurance H Aziza, J Postel-Pellerin, M Moreau IEEE Transactions on Device and Materials Reliability 22 (4), 500-505, 2022 | 7 | 2022 |
Impact of a laser pulse on a stt-mram bitcell: Security and reliability issues M Kharbouche-Harrari, J Postel-Pellerin, G Di Pendina, R Wacquez, ... 2018 IEEE 24th International Symposium on On-Line Testing And Robust System …, 2018 | 7 | 2018 |
Data retention under gate stress on a NVM array R Djenadi, G Micolau, J Postel-Pellerin, P Chiquet, R Laffont, JL Ogier, ... Solid-state electronics 78, 80-86, 2012 | 7 | 2012 |
Real-time switching dynamics in STT-MRAM N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, RC Sousa, ... IEEE Journal of the Electron Devices Society 10, 490-494, 2022 | 6 | 2022 |
An augmented OxRAM synapse for spiking neural network (SNN) circuits H Aziza, H Bazzi, J Postel-Pellerin, P Canet, M Moreau, A Harb 2019 14th International Conference on Design & Technology of Integrated …, 2019 | 6 | 2019 |
An evaluation of the extrinsic cells number in a memory array using cross-correlation products and deconvolution: an instance of a microelectronics experimental inverse problem G Micolau, J Postel-Pellerin, R Laffont, F Lalande, C Le Roux, JL Ogier Inverse problems in science and engineering 19 (8), 1043-1062, 2011 | 6 | 2011 |
Leakage paths identification in NVM using biased data retention J Postel-Pellerin, R Laffont, G Micolau, F Lalande, A Régnier, B Bouteille Microelectronics Reliability 50 (9-11), 1474-1478, 2010 | 6 | 2010 |
A Full TCAD simulation and 3D parasitic capacitances extraction in 90nm NAND Flash memories J Postel-Pellerin, P Canet, F Lalande, R Bouchakour, F Jeuland, ... 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2008 | 6 | 2008 |
Experimental analysis on stochastic behavior of preswitching time in STT-MRAM N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, S Nadifi, ... Microelectronics Reliability 138, 114677, 2022 | 5 | 2022 |
Charge loss activation during non-volatiles memory data retention J Postel-Pellerin, G Micolau, P Chiquet, R Laffont, F Lalande, JL Ogier CAS 2012 (International Semiconductor Conference) 2, 377-380, 2012 | 5 | 2012 |