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Jérémy Postel-Pellerin
Jérémy Postel-Pellerin
Aix-Marseille Univ, Université de Toulon, CNRS, UM2NP
Verified email at im2np.fr
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Cited by
Year
True random number generator integration in a resistive RAM memory array using input current limitation
H Aziza, J Postel-Pellerin, H Bazzi, P Canet, M Moreau, V Della Marca, ...
IEEE Transactions on Nanotechnology 19, 214-222, 2020
482020
True random number generation exploiting SET voltage variability in resistive RAM memory arrays
J Postel-Pellerin, H Bazzi, H Aziza, P Canet, M Moreau, V Della Marca, ...
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-5, 2019
182019
ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology
H Aziza, P Canet, J Postel-Pellerin, M Moreau, JM Portal, M Bocquet
2017 Joint International EUROSOI Workshop and International Conference on …, 2017
162017
Push the flash floating gate memories toward the future low energy application
V Della Marca, G Just, A Regnier, JL Ogier, R Simola, S Niel, ...
Solid-State Electronics 79, 210-217, 2013
162013
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
V Della Marca, J Postel-Pellerin, G Just, P Canet, JL Ogier
Microelectronics Reliability 54 (9-10), 2262-2265, 2014
142014
Integrated reliability in EEPROM nonvolatile memory cell design
P Canet, F Lalande, J Razafindramora, V Bouquet, J Postel-Pellerin, ...
Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference, 66-69, 2004
112004
Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories
J Postel-Pellerin, F Lalande, P Canet, R Bouchakour, F Jeuland, ...
Microelectronics Reliability 49 (9-11), 1056-1059, 2009
92009
Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations
M Chambonneau, S Souiki-Figuigui, P Chiquet, V Della Marca, ...
Applied Physics Letters 110 (16), 2017
82017
Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories
P Canet, J Postel-Pellerin, H Aziza
Microelectronics Reliability 64, 36-41, 2016
82016
Modeling charge variation during data retention of MLC Flash memories
J Postel-Pellerin, F Lalande, P Canet, R Bouchakour, F Jeuland, ...
Microelectronics Reliability 49 (9-11), 1060-1063, 2009
82009
State: A test structure for rapid and reliable prediction of resistive ram endurance
H Aziza, J Postel-Pellerin, M Moreau
IEEE Transactions on Device and Materials Reliability 22 (4), 500-505, 2022
72022
Impact of a laser pulse on a stt-mram bitcell: Security and reliability issues
M Kharbouche-Harrari, J Postel-Pellerin, G Di Pendina, R Wacquez, ...
2018 IEEE 24th International Symposium on On-Line Testing And Robust System …, 2018
72018
Data retention under gate stress on a NVM array
R Djenadi, G Micolau, J Postel-Pellerin, P Chiquet, R Laffont, JL Ogier, ...
Solid-state electronics 78, 80-86, 2012
72012
Real-time switching dynamics in STT-MRAM
N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, RC Sousa, ...
IEEE Journal of the Electron Devices Society 10, 490-494, 2022
62022
An augmented OxRAM synapse for spiking neural network (SNN) circuits
H Aziza, H Bazzi, J Postel-Pellerin, P Canet, M Moreau, A Harb
2019 14th International Conference on Design & Technology of Integrated …, 2019
62019
An evaluation of the extrinsic cells number in a memory array using cross-correlation products and deconvolution: an instance of a microelectronics experimental inverse problem
G Micolau, J Postel-Pellerin, R Laffont, F Lalande, C Le Roux, JL Ogier
Inverse problems in science and engineering 19 (8), 1043-1062, 2011
62011
Leakage paths identification in NVM using biased data retention
J Postel-Pellerin, R Laffont, G Micolau, F Lalande, A Régnier, B Bouteille
Microelectronics Reliability 50 (9-11), 1474-1478, 2010
62010
A Full TCAD simulation and 3D parasitic capacitances extraction in 90nm NAND Flash memories
J Postel-Pellerin, P Canet, F Lalande, R Bouchakour, F Jeuland, ...
2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2008
62008
Experimental analysis on stochastic behavior of preswitching time in STT-MRAM
N Yazigy, J Postel-Pellerin, V Della Marca, K Terziyan, S Nadifi, ...
Microelectronics Reliability 138, 114677, 2022
52022
Charge loss activation during non-volatiles memory data retention
J Postel-Pellerin, G Micolau, P Chiquet, R Laffont, F Lalande, JL Ogier
CAS 2012 (International Semiconductor Conference) 2, 377-380, 2012
52012
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