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James A. Schrock
James A. Schrock
Air Force Research Laboratory
Verified email at ieee.org
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Year
Failure Analysis of 1200-V / 150-A SiC MOSFET under Repetitive Pulsed Overcurrent Conditions
JA Schrock, BN Pushpakaran, A Bilbao, W Ray II, E Hirsch, M Kelley, ...
Power Electronics, IEEE Transactions on, 2015
982015
High-mobility stable 1200-V, 150-A 4H-SiC DMOSFET long-term reliability analysis under high current density transient conditions
JA Schrock, WB Ray II, K Lawson, A Bilbao, SB Bayne, SL Holt, L Cheng, ...
IEEE Transactions on Power Electronics 30 (6), 2891-2895, 2014
412014
Failure modes of 15-kV SiC SGTO thyristors during repetitive extreme pulsed overcurrent conditions
JA Schrock, EA Hirsch, S Lacouture, MD Kelley, AV Bilbao, WB Ray, ...
IEEE Transactions on Power Electronics 31 (12), 8058-8062, 2016
192016
High performance, large-area, 1600 V/150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications
L Cheng, AK Agarwal, M Schupbach, DA Gajewski, DJ Lichtenwalner, ...
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
192013
Analysis of GaN Power MOSFET Exposure to Pulsed Overcurrents
WB Ray, JA Schrock, AV Bilbao, MD Kelley, SL Lacouture, EA Hirsch, ...
20th IEEE International Pulsed Power Conference (PPC), 2015
162015
Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET
MD Kelley, BN Pushpakaran, AV Bilbao, JA Schrock, SB Bayne
Microelectronics Reliability 81, 174-180, 2018
132018
Evaluation of long-term reliability and overcurrent capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs during narrow current pulsed conditions
M Kim, JJ Forbes, EA Hirsch, J Schrock, S Lacouture, A Bilbao, SB Bayne, ...
IEEE Transactions on Plasma Science 48 (11), 3962-3967, 2020
122020
Analysis on repetitive pulsed overcurrent operation of GaN power transistors
WB Ray, M Kim, A Bilbao, JA Schrock, SB Bayne
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
102016
Spatially dispersive nonlinear transmission line experimental performance analysis
JA Schrock, BW Hoff, DH Simon, SL Heidger, P Lepell, J Gilbrech, ...
IEEE Transactions on Dielectrics and Electrical Insulation 26 (2), 412-415, 2019
92019
Extraction of Safe Operating Area and Long Term Reliability of Experimental Silicon Carbide Super Gate Turn Off Thyristors
S Lacouture, JA Schrock, WB Ray, EA Hirsch, S Bayne, M Giesselmann
20th IEEE International Pulsed Power Conference (PPC), 2015
92015
Analysis of Advanced 20 kV / 20 A Silicon Carbide Power Insulated Gate Bipolar Transistor in Resistive and Inductive Switching Tests
AV Bilbao, JA Schrock, WB Ray, MD Kelley, SB Bayne
20th IEEE International Pulsed Power Conference (PPC), 2015
82015
Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices
AV Bilbao, JA Schrock, WB Ray, MD Kelley, SL Holt, MG Giesselmann, ...
Review of Scientific Instruments 86 (8), 2015
52015
An open circuit voltage decay system for performing injection dependent lifetime spectroscopy
S Lacouture, J Schrock, E Hirsch, S Bayne, H O’Brien, AA Ogunniyi
Review of Scientific Instruments 88 (9), 2017
42017
Narrow pulse evaluation of 15 KV SiC MOSFETs and IGBTs
EA Hirsch, JA Schrock, SB Bayne, H O'Brien, A Ogunniyi
2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-4, 2017
42017
Analysis on repetitive pulsed overcurrent operation of GaN power transistors
M Kim, KR Popp, C Tchoupe-Nono, WB Ray, AV Bilbao, JA Schrock, ...
2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-4, 2017
42017
Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs
A Ogunniyi, J Schrock, M Hinojosa, H O’Brien, AJ Lelis, S Bayne, SH Ryu
Materials Science Forum 897, 575-578, 2017
42017
Continuous switching of ultra-high voltage silicon carbide MOSFETs
AV Bilbao, JA Schrock, MD Kelley, E Hirsch, WB Ray, SB Bayne, ...
2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2016
42016
Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications
K Lawson, J Schrock, W Ray, S Bayne, L Cheng, J Palmour, S Allen, ...
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014
42014
Electron beam modulator based on a nonlinear transmission line
BW Hoff, DH Simon, JA Schrock
US Patent 10,109,447, 2018
32018
Simulation and design trade-off analysis of 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions
JA Schrock, EA Hirsch, A Bilbao, S Lacouture, W Ray, S Bayne, ...
2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2016
32016
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