| Failure Analysis of 1200-V / 150-A SiC MOSFET under Repetitive Pulsed Overcurrent Conditions JA Schrock, BN Pushpakaran, A Bilbao, W Ray II, E Hirsch, M Kelley, ... Power Electronics, IEEE Transactions on, 2015 | 100 | 2015 |
| High-mobility stable 1200-V, 150-A 4H-SiC DMOSFET long-term reliability analysis under high current density transient conditions JA Schrock, WB Ray II, K Lawson, A Bilbao, SB Bayne, SL Holt, L Cheng, ... IEEE Transactions on Power Electronics 30 (6), 2891-2895, 2014 | 43 | 2014 |
| Failure modes of 15-kV SiC SGTO thyristors during repetitive extreme pulsed overcurrent conditions JA Schrock, EA Hirsch, S Lacouture, MD Kelley, AV Bilbao, WB Ray, ... IEEE Transactions on Power Electronics 31 (12), 8058-8062, 2016 | 21 | 2016 |
| Analysis of GaN Power MOSFET Exposure to Pulsed Overcurrents WB Ray, JA Schrock, AV Bilbao, MD Kelley, SL Lacouture, EA Hirsch, ... 20th IEEE International Pulsed Power Conference (PPC), 2015 | 17 | 2015 |
| High performance, large-area, 1600 V/150 A, 4H-SiC DMOSFET for robust high-power and high-temperature applications L Cheng, AK Agarwal, M Schupbach, DA Gajewski, DJ Lichtenwalner, ... 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 17 | 2013 |
| Evaluation of long-term reliability and overcurrent capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs during narrow current pulsed conditions M Kim, JJ Forbes, EA Hirsch, J Schrock, S Lacouture, A Bilbao, SB Bayne, ... IEEE Transactions on Plasma Science 48 (11), 3962-3967, 2020 | 14 | 2020 |
| Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET MD Kelley, BN Pushpakaran, AV Bilbao, JA Schrock, SB Bayne Microelectronics Reliability 81, 174-180, 2018 | 13 | 2018 |
| Spatially dispersive nonlinear transmission line experimental performance analysis JA Schrock, BW Hoff, DH Simon, SL Heidger, P Lepell, J Gilbrech, ... IEEE Transactions on Dielectrics and Electrical Insulation 26 (2), 412-415, 2019 | 12 | 2019 |
| Analysis on repetitive pulsed overcurrent operation of GaN power transistors WB Ray, M Kim, A Bilbao, JA Schrock, SB Bayne 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 11 | 2016 |
| Extraction of Safe Operating Area and Long Term Reliability of Experimental Silicon Carbide Super Gate Turn Off Thyristors S Lacouture, JA Schrock, WB Ray, EA Hirsch, S Bayne, M Giesselmann 20th IEEE International Pulsed Power Conference (PPC), 2015 | 10 | 2015 |
| Analysis of Advanced 20 kV / 20 A Silicon Carbide Power Insulated Gate Bipolar Transistor in Resistive and Inductive Switching Tests AV Bilbao, JA Schrock, WB Ray, MD Kelley, SB Bayne 20th IEEE International Pulsed Power Conference (PPC), 2015 | 8 | 2015 |
| An open circuit voltage decay system for performing injection dependent lifetime spectroscopy S Lacouture, J Schrock, E Hirsch, S Bayne, H O’Brien, AA Ogunniyi Review of Scientific Instruments 88 (9), 2017 | 5 | 2017 |
| Analysis on repetitive pulsed overcurrent operation of GaN power transistors M Kim, KR Popp, C Tchoupe-Nono, WB Ray, AV Bilbao, JA Schrock, ... 2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-4, 2017 | 5 | 2017 |
| Simulation study of switching-dependent device parameters of high voltage 4H-SiC GTOs A Ogunniyi, J Schrock, M Hinojosa, H O’Brien, AJ Lelis, S Bayne, SH Ryu Materials Science Forum 897, 575-578, 2017 | 5 | 2017 |
| Continuous switching of ultra-high voltage silicon carbide MOSFETs AV Bilbao, JA Schrock, MD Kelley, E Hirsch, WB Ray, SB Bayne, ... 2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC …, 2016 | 5 | 2016 |
| Development and testing of an active high voltage saturation probe for characterization of ultra-high voltage silicon carbide semiconductor devices AV Bilbao, JA Schrock, WB Ray, MD Kelley, SL Holt, MG Giesselmann, ... Review of Scientific Instruments 86 (8), 2015 | 5 | 2015 |
| Narrow pulse evaluation of 15 KV SiC MOSFETs and IGBTs EA Hirsch, JA Schrock, SB Bayne, H O'Brien, A Ogunniyi 2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-4, 2017 | 4 | 2017 |
| Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications K Lawson, J Schrock, W Ray, S Bayne, L Cheng, J Palmour, S Allen, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 4 | 2014 |
| Nonlinear transmission line-driven apparatus for short-pulse microwave exposure of aerosolized pathogens DA Enderich, BW Hoff, M Geiler, A Geiler, C Ottesen, ZW Cohick, ... Review of Scientific Instruments 92 (6), 2021 | 3 | 2021 |
| Electron beam modulator based on a nonlinear transmission line BW Hoff, DH Simon, JA Schrock US Patent 10,109,447, 2018 | 3 | 2018 |
