| Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems J Chen, C Wanjun, Z Chunhua US Patent 8,076,699, 2011 | 207 | 2011 |
| High-performance AlGaN∕ GaN lateral field-effect rectifiers compatible with high electron mobility transistors W Chen, KY Wong, W Huang, KJ Chen Applied physics letters 92 (25), 2008 | 195 | 2008 |
| Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT W Chen, KY Wong, KJ Chen Electron Device Letters, IEEE 30 (5), 430-432, 2009 | 181 | 2009 |
| GaN power integration for high frequency and high efficiency power applications: A review R Sun, J Lai, W Chen, B Zhang IEEE Access 8, 15529-15542, 2020 | 157 | 2020 |
| 7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering Q Zhou, L Liu, A Zhang, B Chen, Y Jin, Y Shi, Z Wang, W Chen, B Zhang IEEE, 2016 | 112 | 2016 |
| Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNₓ Passivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ... IEEE, 2016 | 98 | 2016 |
| High-voltage LDMOS with charge-balanced surface low on-resistance path layer B Zhang, W Wang, W Chen, Z Li, Z Li IEEE Electron device letters 30 (8), 849-851, 2009 | 98 | 2009 |
| A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector H Jiang, B Zhang, W Chen, Z Li, C Liu, Z Rao, B Dong IEEE Electron device letters 33 (3), 417-419, 2012 | 83 | 2012 |
| Carrier Transport Mechanisms Underlying the Bidirectional Shift in p-GaN Gate HEMTs Under Forward Gate Stress Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang IEEE Transactions on Electron Devices 66 (2), 876-882, 2018 | 74 | 2018 |
| Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters W Chen, KY Wong, KJ Chen 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 73 | 2008 |
| Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing J Zhang, S Huang, Q Bao, X Wang, K Wei, Y Zheng, Y Li, C Zhao, X Liu, ... Applied Physics Letters 107 (26), 2015 | 67 | 2015 |
| Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures J Zhang, X Kang, X Wang, S Huang, C Chen, K Wei, Y Zheng, Q Zhou, ... IEEE Electron Device Letters 39 (6), 847-850, 2018 | 62 | 2018 |
| Integrated voltage reference and comparator circuits for GaN smart power chip technology KY Wong, W Chen, KJ Chen 2009 21st International Symposium on Power Semiconductor Devices & IC's, 57-60, 2009 | 59 | 2009 |
| Electric field distribution around drain-side gate edge in AlGaN/GaN HEMTs: Analytical approach J Si, J Wei, W Chen, B Zhang IEEE transactions on electron devices 60 (10), 3223-3229, 2013 | 58 | 2013 |
| GaN smart power IC technology KY Wong, W Chen, X Liu, C Zhou, KJ Chen physica status solidi (b) 247 (7), 1732-1734, 2010 | 55 | 2010 |
| Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions X Deng, H Zhu, X Li, X Tong, S Gao, Y Wen, S Bai, W Chen, K Zhou, ... IEEE transactions on power electronics 35 (8), 8524-8531, 2020 | 51 | 2020 |
| Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection Y Shi, Q Zhou, Q Cheng, P Wei, L Zhu, D Wei, A Zhang, W Chen, B Zhang 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 49 | 2018 |
| Schottky-contact technology in InAlN/GaN HEMTs for breakdown voltage improvement Q Zhou, W Chen, S Liu, B Zhang, Z Feng, S Cai, KJ Chen IEEE transactions on electron devices 60 (3), 1075-1081, 2013 | 48 | 2013 |
| Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Z Liu, S Huang, Q Bao, X Wang, K Wei, H Jiang, H Cui, J Li, C Zhao, X Liu, ... Journal of Vacuum Science & Technology B 34 (4), 2016 | 47 | 2016 |
| Schottky-ohmic drain AlGaN/GaN normally off HEMT with reverse drain blocking capability C Zhou, W Chen, EL Piner, KJ Chen IEEE electron device letters 31 (7), 668-670, 2010 | 47 | 2010 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of ChinaVerified email at uestc.edu.cn
