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Zhihui Cheng
Zhihui Cheng
Verified email at intel.com
Title
Cited by
Cited by
Year
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
FA McGuire, Z Cheng, K Price, AD Franklin
Applied Physics Letters 109 (9), 2016
1222016
Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts
Z Cheng, Y Yu, S Singh, K Price, SG Noyce, YC Lin, L Cao, AD Franklin
Nano letters 19 (8), 5077-5085, 2019
902019
How to report and benchmark emerging field-effect transistors
Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ...
Nature Electronics 5 (7), 416-423, 2022
722022
Electronic stability of carbon nanotube transistors under long-term bias stress
SG Noyce, JL Doherty, Z Cheng, H Han, S Bowen, AD Franklin
Nano letters 19 (3), 1460-1466, 2019
462019
Contacting and gating 2-D nanomaterials
Z Cheng, K Price, AD Franklin
IEEE Transactions on Electron Devices 65 (10), 4073-4083, 2018
342018
Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors
JL Doherty, SG Noyce, Z Cheng, H Abuzaid, AD Franklin
ACS applied materials & interfaces 12 (31), 35698-35706, 2020
272020
Convergent ion beam alteration of 2D materials and metal-2D interfaces
Z Cheng, H Abuzaid, Y Yu, F Zhang, Y Li, SG Noyce, NX Williams, YC Lin, ...
2D Materials 6 (3), 034005, 2019
212019
Are 2D interfaces really flat?
Z Cheng, H Zhang, ST Le, H Abuzaid, G Li, L Cao, AV Davydov, ...
ACS nano 16 (4), 5316-5324, 2022
202022
Modifying the Ni-MoS2 Contact Interface Using a Broad-Beam Ion Source
Z Cheng, JA Cardenas, F McGuire, S Najmaei, AD Franklin
IEEE Electron Device Letters 37 (9), 1234-1237, 2016
162016
Unanticipated polarity shift in edge-contacted tungsten-based 2D transition metal dichalcogenide transistors
H Abuzaid, Z Cheng, G Li, L Cao, AD Franklin
IEEE Electron Device Letters 42 (10), 1563-1566, 2021
102021
Effects of gate stack composition and thickness in 2-D negative capacitance FETs
YC Lin, F McGuire, S Noyce, N Williams, Z Cheng, J Andrews, ...
IEEE Journal of the Electron Devices Society 7, 645-649, 2019
62019
Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements
Z Cheng, J Backman, H Zhang, H Abuzaid, G Li, Y Yu, L Cao, ...
Advanced Materials 35 (21), 2210916, 2023
42023
Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs
Z Cheng, JA Cardenas, F McGuire, AD Franklin
Device Research Conference (DRC), 2016 74th Annual, 1-2, 2016
32016
New Observations in Contact Scaling for 2D FETs
Z Cheng, H Abuzaid, Y Yu, S Singh, L Cao, AD Franklin
2019 Device Research Conference (DRC), 227-228, 2019
22019
Asymmetrical contact scaling and measurements in MoS2 FETs
Z Cheng, J Backman, H Zhang, H Abuzaid, G Li, Y Yu, L Cao, ...
arXiv preprint arXiv:2209.04144, 2022
2022
New Approaches and Observations in Scaled Contacts for 2D FETs
Z Cheng, H Abuzaid, Y Yu, S Singh, L Cao, C Richter, A Franklin
Bulletin of the American Physical Society 65, 2020
2020
Modification and Scaling of Metal Contacts to 2D Materials Using an in-situ Argon Ion Beam
Z Cheng
Duke University, 2019
2019
Edge contacts to multilayer MoS2 using in situ Ar ion beam
Z Cheng, K Price, AD Franklin
Device Research Conference (DRC), 2017 75th Annual, 1-2, 2017
2017
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Articles 1–18