| Diamond power devices: state of the art, modelling, figures of merit and future perspective N Donato, N Rouger, J Pernot, G Longobardi, F Udrea Journal of Physics D: Applied Physics 53 (9), 093001, 2019 | 259 | 2019 |
| Static and dynamic effects of the incomplete ionization in superjunction devices N Donato, F Udrea IEEE transactions on electron devices 65 (10), 4469-4475, 2018 | 35 | 2018 |
| Design of a normally-off diamond JFET for high power integrated applications N Donato, D Pagnano, E Napoli, G Longobardi, F Udrea Diamond and Related Materials 78, 73-82, 2017 | 20 | 2017 |
| Gate oxide electrical stability of p-type diamond MOS capacitors O Loto, M Florentin, C Masante, N Donato, ML Hicks, AC Pakpour-Tabrizi, ... IEEE Transactions on Electron Devices 65 (8), 3361-3364, 2018 | 19 | 2018 |
| An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers K Naydenov, N Donato, F Udrea Journal of Applied Physics 127 (19), 2020 | 12 | 2020 |
| On the models used for TCAD simulations of Diamond Schottky Barrier Diodes N Donato, M Antoniou, E Napoli, G Amaratunga, F Udrea 2015 International Semiconductor Conference (CAS), 223-226, 2015 | 10 | 2015 |
| Single and repetitive surge current events of 3.3 kV-20 a 4H-SiC JBS rectifiers: The impact of the anode layout N Donato, F Udrea, A Mihaila, L Knoll, G Romano, L Kranz, M Antoniou 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 8 | 2020 |
| Operation and performance of the 4H-SiC junctionless FinFET K Naydenov, N Donato, F Udrea Engineering Research Express 3 (3), 035008, 2021 | 6 | 2021 |
| Effect of pillar ripple on static and dynamic trade-offs in superjunction MOSFETs H Kang, N Donato, F Udrea IEEE Electron Device Letters 41 (5), 753-756, 2020 | 6 | 2020 |
| Modelling and design of diamond power semiconductor devices N Donato | 5 | 2019 |
| Analytic modeling of a hybrid power module based on diamond and SiC devices M Couret, A Castelan, N Donato, F Udrea, J Pernot, N Rouger Diamond and Related Materials 124, 108936, 2022 | 4 | 2022 |
| Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts K Naydenov, N Donato, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll Materials Science Forum 1062, 627-631, 2022 | 2 | 2022 |
| 6.2 Diamond devices in power converters: needs N Rouger, N Donato, F Udrea Power Electronics Device Applications of Diamond Semiconductors, 400-31, 2018 | 2 | 2018 |
| On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts N Donato, K Naydenov, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll Materials Science Forum 1062, 632-636, 2022 | 1 | 2022 |
| Optimisation of the carrier lifetime profile in 1.2 KV planar and trench SiC MOSFETs K Naydenov, N Donato, F Udrea, A Mihaila, G Romano, S Wirths, L Knoll 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 1 | 2022 |
| Power semiconductor device G Romano, A Mihaila, M Bellini, Y Arango, L Knoll, N Donato, F Udrea US Patent App. 18/290,714, 2025 | | 2025 |
| POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR DEVICE A Mihaila, G Romano, L Knoll, N Donato, F Udrea WO Patent WO/2024/160,354, 2024 | | 2024 |
| POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR DEVICE N Donato, A Mihaila, G Romano, L Knoll, F Udrea EP Patent EP4411829A1, 2024 | | 2024 |
| POWER SEMICONDUCTOR DEVICE G Romano, A Mihaila, M Bellini, Y Arango, L Knoll, N Donato, F Udrea EP Patent EP4123722A1, 2023 | | 2023 |
| The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs H Kang, N Donato, F Udrea Power Electronic Devices and Components 2, 100009, 2022 | | 2022 |
Julien PERNOTUniv. Grenoble Alpes - Institut Néel - CNRSVerified email at neel.cnrs.fr
