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Theodore D Moustakas
Theodore D Moustakas
Boston University, Electrical and Computer Engineering Department
Verified email at bu.edu - Homepage
Title
Cited by
Cited by
Year
Scattering of electrons at threading dislocations in GaN
NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas
Journal of Applied Physics 83 (7), 3656-3659, 1998
8031998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
R Singh, D Doppalapudi, TD Moustakas, LT Romano
Applied Physics Letters 70 (9), 1089-1091, 1997
6361997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz
Journal of Applied Physics 71 (10), 4933-4943, 1992
5611992
The role of dislocation scattering in n-type GaN films
HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman
Applied physics letters 73 (6), 821-823, 1998
5551998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon
Applied physics letters 59 (8), 944-946, 1991
5541991
Metal contacts to gallium nitride
JS Foresi, TD Moustakas
Applied physics letters 62 (22), 2859-2861, 1993
5251993
Towards the identification of the dominant donor in GaN
P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ...
Physical review letters 75 (2), 296, 1995
4121995
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
T Lei, KF Ludwig Jr, TD Moustakas
Journal of applied physics 74 (7), 4430-4437, 1993
3611993
Growth of GaN by ECR-assisted MBE
TD Moustakas, T Lei, RJ Molnar
Physica B: Condensed Matter 185 (1-4), 36-49, 1993
3371993
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas
Journal of applied physics 84 (3), 1389-1395, 1998
3361998
Optical Devices Featuring textured semiconductor layers
JSC TD Moustakas
US Patent 8,035,113, 2011
3332011
Gallium Nitride (GaN)
JI Pankove, TD Moustakas
(No Title), 1998
3301998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering
W Paul, AJ Lewis, GAN Connell, TD Moustakas
Solid State Communications 20 (10), 969-972, 1976
3141976
Thermal expansion of gallium nitride
M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ...
Journal of applied physics 76 (8), 4909-4911, 1994
2931994
Mechanism of yellow luminescence in GaN
T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
2851995
Effect of nitrogen on the growth of diamond films
S Jin, TD Moustakas
Applied Physics Letters 65 (4), 403-405, 1994
2821994
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ...
Journal of Applied Physics 76 (4), 2429-2434, 1994
2501994
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species
RJ Molnar, TD Moustakas
Journal of Applied Physics 76 (8), 4587-4595, 1994
2361994
Electron transport mechanism in gallium nitride
RJ Molnar, T Lei, TD Moustakas
Applied physics letters 62 (1), 72-74, 1993
2341993
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
RJ Molnar, R Singh, TD Moustakas
Applied physics letters 66 (3), 268-270, 1995
2181995
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