| Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage A Pal, S Zhang, T Chavan, K Agashiwala, CH Yeh, W Cao, K Banerjee Advanced Materials 35 (27), 2109894, 2023 | 63 | 2023 |
| One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across Mo S 2/Metal … K Parto, A Pal, T Chavan, K Agashiwala, CH Yeh, W Cao, K Banerjee Physical Review Applied 15 (6), 064068, 2021 | 50 | 2021 |
| Two-dimensional materials enabled next-generation low-energy compute and connectivity A Pal, K Agashiwala, J Jiang, D Zhang, T Chavan, A Kumar, CH Yeh, ... MRS Bulletin 46 (12), 1211-1228, 2021 | 17 | 2021 |
| Demonstration of CMOS-compatible multi-level graphene interconnects with metal vias K Agashiwala, J Jiang, K Parto, D Zhang, CH Yeh, K Banerjee IEEE Transactions on Electron Devices 68 (4), 2083-2091, 2021 | 16 | 2021 |
| Reliability and performance of CMOS-compatible multi-level graphene interconnects incorporating vias K Agashiwala, J Jiang, CH Yeh, K Parto, D Zhang, K Banerjee 2020 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2020 | 3 | 2020 |
| Computational study of spin injection in 2D materials A Pal, K Parto, K Agashiwala, W Cao, K Banerjee 2019 IEEE International Electron Devices Meeting (IEDM), 24.2. 1-24.2. 4, 2019 | 3 | 2019 |
| Can kinetic inductance in low-dimensional materials enable a new generation of RF-electronics? K Agashiwala, A Pal, W Cao, J Jiang, K Banerjee 2018 IEEE International Electron Devices Meeting (IEDM), 24.4. 1-24.4. 4, 2018 | 3 | 2018 |
| Strain engineering in 2D FETs: Physics, status, and prospects A Kumar, L Xu, A Pal, K Agashiwala, K Parto, W Cao, K Banerjee Journal of Applied Physics 136 (9), 2024 | 2 | 2024 |
| Advancing High-Performance Large-Scale Quantum Computing with Cryogenic 2D-CMOS K Agashiwala, A Pal, H Cui, T Chavan, W Cao, K Banerjee 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| The scaling of the microLED and the advantage of 2D materials X Xie, HT Chorsi, K Agashiwala, HM Chang, J Kang, JH Chu, I Sarpkaya, ... arXiv preprint arXiv:2101.10077, 2021 | 2 | 2021 |
| A Framework for Exploring Gate-Dielectric Materials for High-Performance Two-Dimensional Field-Effect-Transistors A Kumar, L Xu, A Ho, A Pal, K Agashiwala, K Parto, W Cao, K Banerjee IEEE Transactions on Materials for Electron Devices, 2024 | | 2024 |
| Cmos-compatible graphene structures, interconnects and fabrication methods K Banerjee, J Jiang, K Agashiwala US Patent App. 18/252,459, 2024 | | 2024 |
| Energy-Efficient Electronics Enabled by Two-Dimensional Van der Waals Materials KD Agashiwala UC Santa Barbara, 2024 | | 2024 |
| VITERBI–INDIA PROGRAM 2016 G Sukhatme Indian Institute of Technology-Roorkee, 2016 | | 2016 |
Kaustav BanerjeeUC Santa Barbara, Stanford University, UC BerkeleyVerified email at ece.ucsb.edu
