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Hock M. Ng
Hock M. Ng
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Title
Cited by
Cited by
Year
Scattering of electrons at threading dislocations in GaN
NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas
Journal of applied physics 83, 3656, 1998
8101998
The role of dislocation scattering in n-type GaN films
HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman
Applied physics letters 73 (6), 821-823, 1998
5611998
Intersubband absorption at λ∼ 1.55 μm in well-and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
C Gmachl, HM Ng, SNG Chu, AY Cho
Applied Physics Letters 77, 3722, 2000
3892000
Molecular-beam epitaxy of GaN/AlGaN multiple quantum wells on R-plane (1012) sapphire substrates
HM Ng
Applied physics letters 80, 4369, 2002
3652002
GaN nanotip pyramids formed by anisotropic etching
HM Ng, NG Weimann, A Chowdhury
Journal of applied physics 94 (1), 650-653, 2003
2242003
High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
HM Ng, TD Moustakas, SNG Chu
Applied Physics Letters 76, 2818, 2000
2092000
Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition
J Zhong, S Muthukumar, Y Chen, Y Lu, HM Ng, W Jiang, EL Garfunkel
Applied physics letters 83, 3401, 2003
2082003
Second-harmonic generation in periodically poled GaN
A Chowdhury, HM Ng, M Bhardwaj, NG Weimann
Applied physics letters 83, 1077, 2003
2052003
Comparative study of ultrafast intersubband electron scattering times at∼ 1.55 μm wavelength in GaN/AlGaN heterostructures
JD Heber, C Gmachl, HM Ng, AY Cho
Applied physics letters 81, 1237, 2002
1792002
Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼ 1.75–4.2 μm
C Gmachl, HM Ng, AY Cho
Applied Physics Letters 77, 334, 2000
1662000
Intersubband absorption in degenerately doped GaN/AlGaN coupled double quantum wells
C Gmachl, HM Ng, AY Cho
Applied Physics Letters 79, 1590, 2001
1622001
Light-emitting crystal structures
HM Ng
US Patent 7,952,109, 2011
1282011
Light-emitting crystal structures
HM Ng
US Patent 7,952,109, 2011
1282011
Light-emitting crystal structures
HM Ng
US Patent 7,952,109, 2011
1282011
Broadening of near-band-gap photoluminescence in n-GaN films
E Iliopoulos, D Doppalapudi, HM Ng, TD Moustakas
Applied physics letters 73, 375, 1998
1221998
Distributed Bragg reflectors based on AlN/GaN multilayers
HM Ng, D Doppalapudi, E Iliopoulos, TD Moustakas
Applied physics letters 74, 1036, 1999
1151999
Multimedia Telecommunication Apparatus With Motion Tracking
HM Ng, EL Sutter
US Patent App. 13/029,326, 2012
1002012
Sub-picosecond electron scattering time for λ= 1.55 μm intersubband transitions in GaN/AlGaN multiple quantum wells
C Gmachl, SV Frolov, HM Ng, SNG Chu, AY Cho
Electronics Letters 37 (6), 378-380, 2001
962001
Electrical characterization of GaN/SiC np heterojunction diodes
JT Torvik, M Leksono, JI Pankove, B Van Zeghbroeck, HM Ng, ...
Applied physics letters 72, 1371, 1998
831998
Method and apparatus for providing an immersive meeting experience for remote meeting participants
HM Ng, EL Sutter, RM Abbot
US Patent App. 13/029,168, 2012
812012
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