Fundamentals of silicon carbide technology: growth, characterization, devices and applications T Kimoto, JA Cooper
John Wiley & Sons, 2014
1509 2014 Material science and device physics in SiC technology for high-voltage power devices T Kimoto
Japanese Journal of Applied Physics 54 (4), 040103, 2015
995 2015 Step-controlled epitaxial growth of SiC: High quality homoepitaxy H Matsunami, T Kimoto
Materials Science and Engineering: R: Reports 20 (3), 125-166, 1997
760 1997 Deep defect centers in silicon carbide monitored with deep level transient spectroscopy T Dalibor, G Pensl, H Matsunami, T Kimoto, WJ Choyke, A Schöner, ...
physica status solidi (a) 162 (1), 199-225, 1997
512 1997 Power conversion with SiC devices at extremely high ambient temperatures T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ...
IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007
402 2007 High performance of high-voltage 4H-SiC Schottky barrier diodes A Itoh, T Kimoto, H Matsunami
IEEE Electron Device Letters 16 (6), 280-282, 1995
306 1995 Negative- NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
272 2012 High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~ 0) face H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara
IEEE Electron Device Letters 20 (12), 611-613, 1999
266 1999 Performance limiting surface defects in SiC epitaxial pn junction diodes T Kimoto, N Miyamoto, H Matsunami
IEEE Transactions on Electron Devices 46 (3), 471-477, 1999
265 1999 Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation T Hiyoshi, T Kimoto
Applied Physics Express 2 (4), 041101, 2009
263 2009 Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation K Danno, D Nakamura, T Kimoto
Applied physics letters 90 (20), 2007
242 2007 Growth mechanism of 6H‐SiC in step‐controlled epitaxy T Kimoto, H Nishino, WS Yoo, H Matsunami
Journal of applied physics 73 (2), 726-732, 1993
241 1993 Interface properties of metal–oxide–semiconductor structures on 4H-SiC {0001} and (1120) formed by N2O oxidation T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami
Japanese journal of applied physics 44 (3R), 1213, 2005
233 2005 Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC {0001} vicinal surfaces T Kimoto, H Matsunami
Journal of applied physics 75 (2), 850-859, 1994
228 1994 Step bunching mechanism in chemical vapor deposition of 6H–and 4H–SiC {0001} T Kimoto, A Itoh, H Matsunami, T Okano
Journal of applied physics 81 (8), 3494-3500, 1997
222 1997 Step‐controlled epitaxial growth of high‐quality SiC layers T Kimoto, A Itoh, H Matsunami
physica status solidi (b) 202 (1), 247-262, 1997
221 1997 Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001) Y Negoro, K Katsumoto, T Kimoto, H Matsunami
Journal of Applied Physics 96 (1), 224-228, 2004
193 2004 Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's H Yano, F Katafuchi, T Kimoto, H Matsunami
IEEE Transactions on Electron Devices 46 (3), 504-510, 1999
191 1999 Step bunching in chemical vapor deposition of 6H–and 4H–SiC on vicinal SiC (0001) faces T Kimoto, A Itoh, H Matsunami
Applied physics letters 66 (26), 3645-3647, 1995
190 1995 Defect engineering in SiC technology for high-voltage power devices T Kimoto, H Watanabe
Applied Physics Express 13 (12), 120101, 2020
189 2020 