Tsunenobu Kimoto
Tsunenobu Kimoto
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Fundamentals of silicon carbide technology: growth, characterization, devices and applications
T Kimoto, JA Cooper
John Wiley & Sons, 2014
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto
Japanese Journal of Applied Physics 54 (4), 040103, 2015
Step-controlled epitaxial growth of SiC: High quality homoepitaxy
H Matsunami, T Kimoto
Materials Science and Engineering: R: Reports 20 (3), 125-166, 1997
Deep defect centers in silicon carbide monitored with deep level transient spectroscopy
T Dalibor, G Pensl, H Matsunami, T Kimoto, WJ Choyke, A Schöner, ...
physica status solidi (a) 162 (1), 199-225, 1997
Power conversion with SiC devices at extremely high ambient temperatures
T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ...
IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007
High performance of high-voltage 4H-SiC Schottky barrier diodes
A Itoh, T Kimoto, H Matsunami
IEEE Electron Device Letters 16 (6), 280-282, 1995
Performance limiting surface defects in SiC epitaxial pn junction diodes
T Kimoto, N Miyamoto, H Matsunami
IEEE Transactions on Electron Devices 46 (3), 471-477, 1999
Negative- System of Carbon Vacancy in -SiC
NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~ 0) face
H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara
IEEE Electron Device Letters 20 (12), 611-613, 1999
Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation
T Hiyoshi, T Kimoto
Applied Physics Express 2 (4), 041101, 2009
Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
K Danno, D Nakamura, T Kimoto
Applied physics letters 90 (20), 2007
Growth mechanism of 6H‐SiC in step‐controlled epitaxy
T Kimoto, H Nishino, WS Yoo, H Matsunami
Journal of applied physics 73 (2), 726-732, 1993
Interface properties of metal–oxide–semiconductor structures on 4H-SiC {0001} and (1120) formed by N2O oxidation
T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami
Japanese journal of applied physics 44 (3R), 1213, 2005
Step‐controlled epitaxial growth of high‐quality SiC layers
T Kimoto, A Itoh, H Matsunami
physica status solidi (b) 202 (1), 247-262, 1997
Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC {0001} vicinal surfaces
T Kimoto, H Matsunami
Journal of applied physics 75 (2), 850-859, 1994
Step bunching mechanism in chemical vapor deposition of 6H–and 4H–SiC {0001}
T Kimoto, A Itoh, H Matsunami, T Okano
Journal of applied physics 81 (8), 3494-3500, 1997
Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's
H Yano, F Katafuchi, T Kimoto, H Matsunami
IEEE Transactions on Electron Devices 46 (3), 504-510, 1999
Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
A Itoh, T Kimoto, H Matsunami
IEEE Electron Device Letters 17 (3), 139-141, 1996
Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001)
Y Negoro, K Katsumoto, T Kimoto, H Matsunami
Journal of Applied Physics 96 (1), 224-228, 2004
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
K Danno, T Kimoto
Journal of Applied Physics 100 (11), 2006
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20