J°rn M. Hvam
J°rn M. Hvam
Technical University of Denmark, Department of Electronics and Photonics Engineering
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Waveguiding in surface plasmon polariton band gap structures
SI Bozhevolnyi, J Erland, K Leosson, PMW Skovgaard, JM Hvam
Physical review letters 86 (14), 3008, 2001
Subpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs
JA Kash, JC Tsang, JM Hvam
Physical review letters 54 (19), 2151, 1985
Long lived coherence in self-assembled quantum dots
D Birkedal, K Leosson, JM Hvam
Physical review letters 87 (22), 227401, 2001
Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide
M Pu, L Liu, H Ou, K Yvind, JM Hvam
Optics Communications 283 (19), 3678-3682, 2010
Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers
P Borri, W Langbein, JM Hvam, F Heinrichsdorff, MH Mao, D Bimberg
IEEE Photonics Technology Letters 12 (6), 594-596, 2000
Binding of quasi-two-dimensional biexcitons
D Birkedal, J Singh, VG Lyssenko, J Erland, JM Hvam
Physical review letters 76 (4), 672, 1996
Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers
P Borri, W Langbein, JM Hvam, F Heinrichsdorff, MH Mao, D Bimberg
IEEE Journal of selected topics in Quantum electronics 6 (3), 544-551, 2000
Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits
L Liu, Y Ding, K Yvind, JM Hvam
Optics express 19 (13), 12646-12651, 2011
Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS
HP Wagner, M KŘhnelt, W Langbein, JM Hvam
Physical Review B 58 (16), 10494, 1998
Dispersive transport and recombination lifetime in phosphorus-doped hydrogenated amorphous silicon
JM Hvam, MH Brodsky
Physical Review Letters 46 (5), 371, 1981
Dephasing in InAs/GaAs quantum dots
P Borri, W Langbein, J M°rk, JM Hvam, F Heinrichsdorff, MH Mao, ...
Physical Review B 60 (11), 7784, 1999
Time-resolved speckle analysis: A new approach to coherence and dephasing of optical excitations in solids
W Langbein, JM Hvam, R Zimmermann
Physical review letters 82 (5), 1040, 1999
Coherent generation and interference of excitons and biexcitons in GaAs/Al x Ga 1− x As quantum wells
KH Pantke, D Oberhauser, VG Lyssenko, JM Hvam, G Weimann
Physical Review B 47 (4), 2413, 1993
Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures
F Gindele, U Woggon, W Langbein, JM Hvam, K Leonardi, D Hommel, ...
Physical Review B 60 (12), 8773, 1999
Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements
J Johansen, S Stobbe, IS Nikolaev, T Lund-Hansen, PT Kristensen, ...
Physical Review B 77 (7), 073303, 2008
Direct observation of free-exciton thermalization in quantum-well structures
M Umlauff, J Hoffmann, H Kalt, W Langbein, JM Hvam, M Scholl, J S÷llner, ...
Physical Review B 57 (3), 1390, 1998
Higher-order photon bunching in a semiconductor microcavity
M A▀mann, F Veit, M Bayer, M van der Poel, JM Hvam
Science 325 (5938), 297-300, 2009
High-efficiency, large-bandwidth silicon-on-insulator grating coupler based on a fully-etched photonic crystal structure
L Liu, M Pu, K Yvind, JM Hvam
Applied physics letters 96 (5), 2010
Binding energy of two-dimensional biexcitons
J Singh, D Birkedal, VG Lyssenko, JM Hvam
Physical Review B 53 (23), 15909, 1996
Efficient and compact TE–TM polarization converter built on silicon-on-insulator platform with a simple fabrication process
L Liu, Y Ding, K Yvind, JM Hvam
Optics letters 36 (7), 1059-1061, 2011
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