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Tae-Eon Park
Tae-Eon Park
한국과학기술연구원
Verified email at kist.re.kr
Title
Cited by
Cited by
Year
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ...
Nano letters 14 (12), 6976-6982, 2014
7102014
Skyrmion-based artificial synapses for neuromorphic computing
KM Song, JS Jeong, B Pan, X Zhang, J Xia, S Cha, TE Park, K Kim, ...
Nature Electronics 3 (3), 148-155, 2020
4232020
Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications
X Zhang, Y Zhou, KM Song, TE Park, J Xia, M Ezawa, X Liu, W Zhao, ...
Journal of Physics: Condensed Matter 32 (14), 143001, 2020
4042020
Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures
TE Park, L Peng, J Liang, A Hallal, FS Yasin, X Zhang, KM Song, SJ Kim, ...
Physical Review B 103 (10), 104410, 2021
1462021
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
J Suh, TL Tan, W Zhao, J Park, DY Lin, TE Park, J Kim, C Jin, N Saigal, ...
Nature communications 9 (1), 199, 2018
1452018
Room-temperature ferromagnetism in Cu doped GaN nanowires
HK Seong, JY Kim, JJ Kim, SC Lee, SR Kim, U Kim, TE Park, HJ Choi
Nano letters 7 (11), 3366-3371, 2007
1112007
Rashba effect in functional spintronic devices
HC Koo, SB Kim, H Kim, TE Park, JW Choi, KW Kim, G Go, JH Oh, DK Lee, ...
Advanced Materials 32 (51), 2002117, 2020
872020
Self‐formed channel devices based on vertically grown 2D materials with large‐surface‐area and their potential for chemical sensor applications
C Kim, JC Park, SY Choi, Y Kim, SY Seo, TE Park, SH Kwon, B Cho, ...
Small 14 (15), 1704116, 2018
622018
Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism
H Jeong, TE Park, HK Seong, M Kim, U Kim, HJ Choi
Chemical Physics Letters 467 (4-6), 331-334, 2009
532009
Tunable Néel–Bloch Magnetic Twists in Fe3GeTe2 with van der Waals Structure
L Peng, FS Yasin, TE Park, SJ Kim, X Zhang, T Nagai, K Kimoto, S Woo, ...
Advanced Functional Materials 31 (37), 2103583, 2021
382021
Direct Observation of Fe‐Ge Ordering in Fe5−xGeTe2 Crystals and Resultant Helimagnetism
TT Ly, J Park, K Kim, HB Ahn, NJ Lee, K Kim, TE Park, G Duvjir, NH Lam, ...
Advanced Functional Materials 31 (17), 2009758, 2021
382021
Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires
TE Park, YH Park, JM Lee, SW Kim, HG Park, BC Min, H Kim, HC Koo, ...
Nature communications 8 (1), 15722, 2017
312017
Magnetic and electrical properties of single-crystalline Mn-doped Ge nanowires
HK Seong, U Kim, EK Jeon, TE Park, H Oh, TH Lee, JJ Kim, HJ Choi, ...
The Journal of Physical Chemistry C 113 (25), 10847-10852, 2009
302009
Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition
TE Park, J Suh, D Seo, J Park, DY Lin, YS Huang, HJ Choi, J Wu, C Jang, ...
Applied Physics Letters 107 (22), 2015
262015
Magnetic properties of vanadium-doped silicon carbide nanowires
HK Seong, TE Park, SC Lee, KR Lee, JK Park, HJ Choi
Metals and Materials International 15, 107-111, 2009
262009
Exchange-induced electron transport in heavily phosphorus-doped Si nanowires
TE Park, BC Min, I Kim, JE Yang, MH Jo, J Chang, HJ Choi
Nano letters 11 (11), 4730-4735, 2011
222011
Synthesis of p-type GaN nanowires
SW Kim, YH Park, I Kim, TE Park, BW Kwon, WK Choi, HJ Choi
Nanoscale 5 (18), 8550-8554, 2013
142013
Platinum Assisted Vapor–Liquid–Solid Growth of Er–Si Nanowires and Their Optical Properties
MH Kim, IS Kim, YH Park, TE Park, JH Shin, HJ Choi
Nanoscale research letters 5, 286-290, 2010
122010
Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures
SJ Kim, D Choi, KW Kim, KY Lee, DH Kim, S Hong, J Suh, C Lee, SK Kim, ...
ACS nano 15 (10), 16395-16403, 2021
112021
Self-catalytic growth of silicon nanowires on stainless steel
MH Kim, YH Park, I Kim, TE Park, YM Sung, HJ Choi
Materials Letters 64 (21), 2306-2309, 2010
92010
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