Philip Dawson
Philip Dawson
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Linewidth dependence of radiative exciton lifetimes in quantum wells
J Feldmann, G Peter, EO Göbel, P Dawson, K Moore, C Foxon, RJ Elliott
Physical review letters 59 (20), 2337, 1987
Room-temperature operation of an electrically driven terahertz modulator
T Kleine-Ostmann, P Dawson, K Pierz, G Hein, M Koch
Applied physics letters 84 (18), 3555-3557, 2004
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 2005
Evidence for quantum confinement in the photoluminescence of porous Si and SiGe
S Gardelis, JS Rimmer, P Dawson, B Hamilton, RA Kubiak, TE Whall, ...
Applied physics letters 59 (17), 2118-2120, 1991
Carrier localization mechanisms in In x Ga 1− x N/GaN quantum wells
D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ...
Physical Review B 83 (11), 115321, 2011
An optically controllable terahertz filter
IH Libon, S Baumgärtner, M Hempel, NE Hecker, J Feldmann, M Koch, ...
Applied Physics Letters 76 (20), 2821-2823, 2000
Audio signal transmission over THz communication channel using semiconductor modulator
T Kleine-Ostmann, K Pierz, G Hein, P Dawson, M Koch
Electron. Lett 40 (2), 124-126, 2004
Order of the X conduction-band valleys in type-II GaAs/AlAs quantum wells
HW Van Kesteren, EC Cosman, P Dawson, KJ Moore, CT Foxon
Physical Review B 39 (18), 13426, 1989
Unambiguous observation of the 2 s state of the light-and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structures
P Dawson, KJ Moore, G Duggan, HI Ralph, CTB Foxon
Physical Review B 34 (8), 6007, 1986
Experimental study of the Γ-X electron transfer in type-II (Al, Ga) As/AlAs superlattices and multiple-quantum-well structures
J Feldmann, J Nunnenkamp, G Peter, E Göbel, J Kuhl, K Ploog, ...
Physical Review B 42 (9), 5809, 1990
Short-period GaAs-AlAs superlattices: Optical properties and electronic structure
KJ Moore, G Duggan, P Dawson, CT Foxon
Physical Review B 38 (8), 5535, 1988
Indium segregation in InGaN quantum-well structures
N Duxbury, U Bangert, P Dawson, EJ Thrush, W Van der Stricht, K Jacobs, ...
Applied Physics Letters 76 (12), 1600-1602, 2000
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, TJ Badcock, ...
Journal of Applied Physics 111 (8), 2012
Effects of electronic coupling on the band alignment of thin GaAs/AlAs quantum-well structures
KJ Moore, P Dawson, CT Foxon
Physical Review B 38 (5), 3368, 1988
Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets
P Dawson, BA Wilson, CW Tu, RC Miller
Applied physics letters 48 (8), 541-543, 1986
Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlattices
J Feldmann, R Sattmann, EO Göbel, J Kuhl, J Hebling, K Ploog, ...
Physical review letters 62 (16), 1892, 1989
Silicon doping of MBE-grown GaAs films
JH Neave, PJ Dobson, JJ Harris, P Dawson, BA Joyce
Applied Physics A 32, 195-200, 1983
Determination of valence-band effective-mass anisotropy in GaAs quantum wells by optical spectroscopy
LW Molenkamp, R Eppenga, GW Hooft, P Dawson, CT Foxon, KJ Moore
Physical Review B 38 (6), 4314, 1988
Optically detected electron spin resonance in amorphous silicon
K Morigaki, DJ Dunstan, BC Cavenett, P Dawson, JE Nicholls, S Nitta, ...
Solid State Communications 26 (12), 981-985, 1978
Effects of prelayers on minority‐carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxy
P Dawson, K Woodbridge
Applied physics letters 45 (11), 1227-1229, 1984
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