Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films K Chae, J Hwang, E Chagarov, A Kummel, K Cho Journal of Applied Physics 128 (5), 2020 | 24 | 2020 |
Symmetry dictated grain boundary state in a two-dimensional topological insulator HW Kim, SH Kang, HJ Kim, K Chae, S Cho, W Ko, S Jeon, SH Kang, ... Nano Letters 20 (8), 5837-5843, 2020 | 20 | 2020 |
Enhanced Thermoelectric Properties in a New Silicon Crystal Si24 with Intrinsic Nanoscale Porous Structure K Chae, SH Kang, SM Choi, DY Kim, YW Son Nano letters 18 (8), 4748-4754, 2018 | 18 | 2018 |
Atomic-scale imaging of polarization switching in an (anti-) ferroelectric memory material: Zirconia (ZrO2) S Lombardo, C Nelson, K Chae, S Reyes-Lillo, M Tian, N Tasneem, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 17 | 2020 |
Nanocasting of hierarchical nanostructured porous carbon in molecular dynamics simulation K Chae, Y Shi, L Huang Journal of materials chemistry A 1 (12), 3886-3894, 2013 | 16 | 2013 |
Computational study of pressure-driven methane transport in hierarchical nanostructured porous carbons K Chae, L Huang The Journal of Chemical Physics 144 (4), 2016 | 14 | 2016 |
Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0. 5Zr0. 5O2 thin film ferroelectric capacitors SF Lombardo, M Tian, K Chae, J Hur, N Tasneem, S Yu, K Cho, ... Applied Physics Letters 119 (9), 2021 | 13 | 2021 |
A New Family of Two-Dimensional Crystals: Open-Framework T3X (T = C, Si, Ge, Sn; X = O, S, Se, Te) Compounds with Tetrahedral Bonding K Chae, YW Son Nano Letters 19 (4), 2694-2699, 2019 | 11 | 2019 |
Computational study of pressure-driven gas transport in nanostructured carbons: an alternative approach K Chae, L Huang The Journal of Physical Chemistry B 119 (37), 12299-12307, 2015 | 10 | 2015 |
Ferromagnetism induced by vacancies in bulk and the (1010) surfaces of ZnO: density functional theory calculations K Chae, YC Chung, H Kim Japanese Journal of Applied Physics 50 (1S2), 01BE05, 2011 | 9 | 2011 |
A new series of two-dimensional silicon crystals with versatile electronic properties K Chae, DY Kim, YW Son 2D Materials 5 (2), 025013, 2018 | 8 | 2018 |
Remote oxygen scavenging of the interfacial oxide layer in ferroelectric hafnium–zirconium oxide-based metal–oxide–semiconductor structures N Tasneem, H Kashyap, K Chae, C Park, P Lee, SF Lombardo, N Afroze, ... ACS Applied Materials & Interfaces 14 (38), 43897-43906, 2022 | 7 | 2022 |
Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2 K Chae, SF Lombardo, N Tasneem, M Tian, H Kumarasubramanian, ... ACS Applied Materials & Interfaces 14 (32), 36771-36780, 2022 | 7 | 2022 |
Electronic structures of a Zn vacancy on the ZnO (10 0) surface: Density functional theory calculations K Chae, H Kim Journal of the Korean Physical Society 62 (3), 508-512, 2013 | 7 | 2013 |
Aligned carbon nanotubes/amorphous porous carbon nanocomposite: A molecular simulation study K Chae, L Huang The Journal of Physical Chemistry C 119 (12), 6806-6812, 2015 | 6 | 2015 |
Tetravalent Doping in Fluorite-Based Ferroelectric Oxides for Reduced Voltage Operations K Chae, AC Kummel, K Cho ACS Applied Materials & Interfaces 14 (25), 29007-29013, 2022 | 4 | 2022 |
Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices K Chae, AC Kummel, K Cho Nanoscale Advances 3 (16), 4750-4755, 2021 | 4 | 2021 |
DFT models of ferroelectric hafnium-zirconium oxide stacks with and without dielectric interlayers K Chae, A Kummel, K Cho 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 3 | 2021 |
Multi-domain Phase-field Modeling of Polycrystalline Hafnia-based (Anti-) ferroelectrics Capable of Representing Defects, Wake-up and Fatigue SC Chang, K Chae, MI Popovici, CC Lin, S Siddiqui, IC Tung, J Bizindavyi, ... 2022 International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2022 | 2 | 2022 |
Promising photovoltaic efficiency of a layered silicon oxide crystal Si 3 O S Kim, K Chae, YW Son Nanoscale 12 (29), 15638-15642, 2020 | 1 | 2020 |