Avinash Kashyap
Avinash Kashyap
Renesas Electronics
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
Power conversion with SiC devices at extremely high ambient temperatures
T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ...
IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007
Extreme Environment Electronics
CRC Press, 2012
A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes
B Ozpineci, MS Chinthavali, LM Tolbert, AS Kashyap, HA Mantooth
IEEE Transactions on industry applications 45 (1), 278-285, 2009
Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications
JS Glaser, JJ Nasadoski, PA Losee, AS Kashyap, KS Matocha, JL Garrett, ...
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and …, 2011
Silicon carbide integrated circuits for extreme environments
AS Kashyap, CP Chen, R Ghandi, A Patil, E Andarawis, L Yin, ...
The 1st IEEE workshop on wide bandgap power devices and applications, 60-63, 2013
Characterization of SiC JFET for temperature dependent device modeling
T Funaki, AS Kashyap, HA Mantooth, JC Balda, FD Barlow, T Kimoto, ...
2006 37th IEEE Power Electronics Specialists Conference, 1-6, 2006
SiC JFET dc characteristics under extremely high ambient temperatures
T Funaki, JC Balda, J Junghans, AS Kashyap, FD Barlow, HA Mantooth, ...
IEICE Electronics Express 1 (17), 523-527, 2004
Compact modeling of LDMOS transistors for extreme environment analog circuit design
AS Kashyap, HA Mantooth, TA Vo, M Mojarradi
IEEE Transactions on Electron Devices 57 (6), 1431-1439, 2010
Compact circuit simulation model of silicon carbide static induction and junction field effect transistors
AS Kashyap, PL Ramavarapu, SM Lal, TR McNutt, AB Lostetter, T Funaki, ...
2004 IEEE Workshop on Computers in Power Electronics, 2004. Proceedings., 29-35, 2004
Characterization of SiC diodes in extremely high temperature ambient
T Funaki, AS Kashyap, HA Mantooth, JC Balda, FD Barlow, T Kimoto, ...
Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition …, 2006
Method and system for lightning protection with distributed transient voltage suppression
AJ Knobloch, EA Andarawis, HK Mathews Jr, AS Kashyap
US Patent 9,042,072, 2015
Modeling vertical channel junction field effect devices in silicon carbide
AS Kashyap, PL Ramavarapu, S Maganlal, TR McNutt, AB Lostetter, ...
2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No …, 2004
Highly rugged 1200 v 80 mQ 4-H SiC power MOSFET
IH Ji, A Gendron-Hansen, M Lee, E Maxwell, B Odekirk, D Sdrulla, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
Silicon carbide high temperature operational amplifier
A Vert, CP Chen, A Patil, R Saia, E Andarawis, A Kashyap, T Zhang, ...
Additional Papers and Presentations 2012 (HITEC), 000378-000383, 2012
Over-voltage protection of gallium nitride semiconductor devices
AS Kashyap, PM Sandvik, R Zhou
US Patent 9,111,750, 2015
Method and system for ultra miniaturized packages for transient voltage suppressors
AS Kashyap, EA Andarawis, DM Shaddock
US Patent 8,835,976, 2014
Compact modeling of silicon carbide lateral MOSFETs for extreme environment integrated circuits
AS Kashyap, CP Chen, V Tilak
ISDRS 2011, 2, 2011
The modeling and characterization of silicon carbide thyristors
OS Saadeh, HA Mantooth, JC Balda, AK Agarwal, AS Kashyap
2008 IEEE Power Electronics Specialists Conference, 1092-1097, 2008
Beyond the datasheet: commercialization of 700 V-1.7 kV SiC devices with exceptional ruggedness for automotive & industrial applications
AS Kashyap, A Gendron-Hansen, D Sdrulla, B Odekirk, D Meyer, C Hong, ...
PCIM Europe 2018; International Exhibition and Conference for Power …, 2018
System for transient voltage suppressors
AS Kashyap, DM Shaddock, EA Andarawis, PM Sandvik, SD Arthur, ...
US Patent 8,530,902, 2013
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