A physical model of high temperature 4H-SiC MOSFETs S Potbhare, N Goldsman, A Lelis, JM McGarrity, FB McLean, D Habersat IEEE Transactions on Electron devices 55 (8), 2029-2040, 2008 | 213 | 2008 |
Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity Journal of Applied Physics 100 (4), 2006 | 140 | 2006 |
Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs A Akturk, JM McGarrity, S Potbhare, N Goldsman IEEE Transactions on Nuclear Science 59 (6), 3258-3264, 2012 | 138 | 2012 |
Compact and distributed modeling of cryogenic bulk MOSFET operation A Akturk, M Holloway, S Potbhare, D Gundlach, B Li, N Goldsman, ... IEEE Transactions on Electron Devices 57 (6), 1334-1342, 2010 | 59 | 2010 |
A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity Journal of applied physics 100 (4), 2006 | 54 | 2006 |
Energy-and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs S Potbhare, N Goldsman, A Akturk, M Gurfinkel, A Lelis, JS Suehle IEEE Transactions on Electron Devices 55 (8), 2061-2070, 2008 | 47 | 2008 |
High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation A Akturk, N Goldsman, S Potbhare, A Lelis Journal of Applied Physics 105 (3), 2009 | 45 | 2009 |
Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A A Akturk, M Peckerar, K Eng, J Hamlet, S Potbhare, E Longoria, R Young, ... Microelectronic Engineering 87 (12), 2518-2524, 2010 | 33 | 2010 |
System and method for wireless proximity-based access to a computing device S Potbhare, S Giroux, N Goldsman, A Akturk US Patent 9,449,165, 2016 | 23 | 2016 |
Characterization of 4H-SiC MOSFET interface trap charge density using a first principles Coulomb scattering mobility model and device simulation S Potbhare, N Goldsman, G Pennington, JM McGarrity, A Lelis 2005 International Conference On Simulation of Semiconductor Processes and …, 2005 | 23 | 2005 |
The effect of nitridation on SiC MOS oxides as evaluated by charge pumping DB Habersat, AJ Lelis, JM McGarrity, FB McLean, S Potbhare Materials Science Forum 600, 743-746, 2009 | 20 | 2009 |
Modeling and characterization of 4H-SiC MOSFETS: High field, high temperature, and transient effects S Potbhare | 16 | 2008 |
Ion implantation and SiC transistor performance M Gurfinkel, S Potbhare, HD Xiong, JS Suehle, Y Shapira, AJ Lelis, ... Journal of Applied Physics 105 (8), 2009 | 13 | 2009 |
The amplitude of random telegraph noise: Scaling implications KP Cheung, JP Campbell, S Potbhare, A Oates 2012 IEEE International Reliability Physics Symposium (IRPS), GD. 1.1-GD. 1.3, 2012 | 12 | 2012 |
A mid-IR antenna integrated with a geometrically asymmetrical metal-insulator-metal rectifying diode F Yesilkoy, S Potbhare, N Kratzmeier, A Akturk, N Goldsman, M Peckerar, ... Rectenna Solar Cells, 163-188, 2013 | 11 | 2013 |
Effect of band-edge interface traps and transition region mobility on transport in 4H-SiC MOSFETs S Potbhare, A Akturk, N Goldsman, AJ Lelis, S Dhar, AK Agarwal Materials Science Forum 645, 975-978, 2010 | 9 | 2010 |
Time dependent trapping and generation-recombination of interface charges: Modeling and characterization for 4H-SiC MOSFETs S Potbhare, N Goldsman, G Pennington, AJ Lelis, JM McGarrity Materials science forum 556, 847-850, 2007 | 9 | 2007 |
Optoelectronic characterization of 4H-SiC avalanche photodiodes operated in DC and in geiger mode M Dandin, A Akturk, A Vert, S Soloviev, P Sandvik, S Potbhare, ... 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 8 | 2011 |
An enhanced specialized SiC power MOSFET simulation system Z Dilli, A Akturk, N Goldsman, S Potbhare 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 7 | 2015 |
Design methods for wireless sensor network building energy monitoring systems I Cho, CC Shen, S Potbhare, SS Bhattacharyya, N Goldsman 2011 IEEE 36th Conference on Local Computer Networks, 974-981, 2011 | 7 | 2011 |