| Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts OA Ageev, AE Belyaev, NS Boltovets, VN Ivanov, RV Konakova, ... Semiconductors 43, 865-871, 2009 | 229 | 2009 |
| Карбид кремния: технология, свойства, применение ОА Агеев, АЕ Беляев, НС Болтовец, ВС Киселев, РВ Конакова, ... ИСМа, 2010 | 117 | 2010 |
| Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers A Belyaev, O Polupan, W Dallas, S Ostapenko, D Hess, J Wohlgemuth Applied physics letters 88 (11), 2006 | 113 | 2006 |
| Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs SA Vitusevich, N Klein, AE Belyaev, SV Danylyuk, MV Petrychuk, ... physica status solidi (a) 195 (1), 101-105, 2003 | 85 | 2003 |
| Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants O Gryshkov, NI Klyui, VP Temchenko, VS Kyselov, A Chatterjee, ... Materials Science and Engineering: C 68, 143-152, 2016 | 80 | 2016 |
| Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, AY Avksentyev, ... Applied Physics Letters 82 (5), 748-750, 2003 | 73 | 2003 |
| Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕ GaN heterostructures under small dose gamma irradiation AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ... Journal of applied physics 103 (8), 2008 | 62 | 2008 |
| Comment on“AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy”[Appl. Phys. Lett. 81, 1729(2002)] AE Belyaev, CT Foxon, SV Novikov, O Makarovsky, L Eaves, MJ Kappers, ... Applied physics letters 83 (17), 3626, 2003 | 61 | 2003 |
| Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers A Belyaev, O Polupan, S Ostapenko, D Hess, JP Kalejs Semiconductor Science and Technology 21 (3), 254, 2006 | 55 | 2006 |
| Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures AM Kurakin, SA Vitusevich, SV Danylyuk, H Hardtdegen, N Klein, ... Journal of applied physics 105 (7), 2009 | 52 | 2009 |
| Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ... physica status solidi (c), 2389-2392, 2003 | 52 | 2003 |
| Mechanism of contact resistance formation in ohmic contacts with high dislocation density AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ... Journal of Applied Physics 111 (8), 2012 | 51 | 2012 |
| Substrate effects on the strain relaxation in GaN/AlN short-period superlattices V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ... Nanoscale research letters 7, 1-9, 2012 | 46 | 2012 |
| Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ... Journal of applied physics 105 (6), 2009 | 40 | 2009 |
| AlGaN/GaN high electron mobility transistor structures: self-heating effect and performance degradation SA Vitusevich, AM Kurakin, N Klein, MV Petrychuk, AV Naumov, ... IEEE transactions on device and materials reliability 8 (3), 543-548, 2008 | 40 | 2008 |
| Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors SA Vitusevich, SV Danylyuk, N Klein, MV Petrychuk, VN Sokolov, ... Applied physics letters 80 (12), 2126-2128, 2002 | 40 | 2002 |
| Фазы внедрения в технологии полупроводниковых приборов и СБИС ОА Агеев, АЕ Беляев, НС Болтовец, РВ Конакова, ВВ Миленин, ... Харьков: НТК Институт монокристаллов, 2008 | 39 | 2008 |
| Noise and transport characterization of single molecular break junctions with individual molecule VA Sydoruk, D Xiang, SA Vitusevich, MV Petrychuk, A Vladyka, Y Zhang, ... Journal of applied physics 112 (1), 2012 | 37 | 2012 |
| Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation SA Vitusevich, AM Kurakin, RV Konakova, AE Belyaev, N Klein Applied surface science 255 (3), 784-786, 2008 | 33 | 2008 |
| Resonance and current instabilities in AlN/GaN resonant tunnelling diodes AE Belyaev, O Makarovsky, DJ Walker, L Eaves, CT Foxon, SV Novikov, ... Physica E: low-dimensional systems and nanostructures 21 (2-4), 752-755, 2004 | 33 | 2004 |
