| Single-donor ionization energies in a nanoscale CMOS channel M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto Nature nanotechnology 5 (2), 133-137, 2009 | 301 | 2009 |
| Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ... Electron Devices Meeting, 2006. IEDM'06. International, 1-4, 2006 | 148 | 2006 |
| A two-atom electron pump B Roche, RP Riwar, B Voisin, E Dupont-Ferrier, R Wacquez, M Vinet, ... Nature Communications 4 (1), 1581, 2013 | 132 | 2013 |
| High Performance UTBB FDSOI Devices Featuring 20nm Gate Length for 14nm Node and Beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 9.2. 1-9.2. 4, 2013 | 124 | 2013 |
| High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ... 2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012 | 121 | 2012 |
| Coherent Coupling of Two Dopants in a Silicon Nanowire Probed by Landau-Zener-Stückelberg Interferometry E Dupont-Ferrier, B Roche, B Voisin, X Jehl, R Wacquez, M Vinet, ... Physical review letters 110 (13), 136802, 2013 | 106 | 2013 |
| Dispersively detected Pauli spin-blockade in a silicon nanowire field-effect transistor AC Betz, R Wacquez, M Vinet, X Jehl, AL Saraiva, M Sanquer, ... Nano letters 15 (7), 4622-4627, 2015 | 96 | 2015 |
| Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012 | 88 | 2012 |
| Hybrid Metal-Semiconductor Electron Pump for Quantum Metrology X Jehl, B Voisin, T Charron, P Clapera, S Ray, B Roche, M Sanquer, ... Physical Review X 3 (2), 021012, 2013 | 78 | 2013 |
| Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy B Roche, E Dupont-Ferrier, B Voisin, M Cobian, X Jehl, R Wacquez, ... Physical Review Letters 108 (20), 206812, 2012 | 75 | 2012 |
| UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below L Grenouillet, M Vinet, J Gimbert, B Giraud, JP Noel, Q Liu, P Khare, ... 2012 International Electron Devices Meeting, 3.6. 1-3.6. 4, 2012 | 61 | 2012 |
| A tunable, dual mode field-effect or single electron transistor B Roche, B Voisin, X Jehl, R Wacquez, M Sanquer, M Vinet, ... Applied Physics Letters 100 (3), 032107, 2012 | 58 | 2012 |
| Charge pumping through a single donor atom GC Tettamanzi, R Wacquez, S Rogge New Journal of Physics 16 (6), 063036, 2014 | 54 | 2014 |
| Compact silicon double and triple dots realized with only two gates M Pierre, R Wacquez, B Roche, X Jehl, M Sanquer, M Vinet, E Prati, ... Applied physics letters 95 (24), 242107, 2009 | 46 | 2009 |
| Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, ... Applied Physics Letters 96 (26), 264102, 2010 | 39 | 2010 |
| UTBB FDSOI scaling enablers for the 10nm node L Grenouillet, Q Liu, R Wacquez, P Morin, N Loubet, D Cooper, A Pofelski, ... SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S …, 2013 | 35 | 2013 |
| UTBB FDSOI scaling enablers for the 10nm node L Grenouillet, Q Liu, R Wacquez, P Morin, N Loubet, D Cooper, A Pofelski, ... 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013 | 35 | 2013 |
| A Novel Structure for Backside Protection Against Physical Attacks on Secure Chips or SiP S Borel, L Duperrex, E Deschaseaux, J Charbonnier, J Cledière, ... 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), 515-520, 2018 | 32 | 2018 |
| Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: 300K transition to Single Electron Transistor V Deshpande, S Barraud, X Jehl, R Wacquez, M Vinet, R Coquand, ... Solid-State Electronics 84, 179-184, 2013 | 32 | 2013 |
| Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm R Wacquez, M Vinet, M Pierre, B Roche, X Jehl, O Cueto, J Verduijn, ... 2010 Symposium on VLSI Technology, 193-194, 2010 | 28 | 2010 |
Mathieu PierreAssociate professor of Physics, INSA Toulouse and CNRS-LNCMIVerified email at lncmi.cnrs.fr
