Hadis Morkoç
Cited by
Cited by
A comprehensive review of ZnO materials and devices
Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ...
Journal of applied physics 98 (4), 2005
Luminescence properties of defects in GaN
MA Reshchikov, H Morkoç
Journal of applied physics 97 (6), 2005
Zinc oxide: fundamentals, materials and device technology
H Morkoç, Ü Özgür
John Wiley & Sons, 2008
Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį
John Wiley & Sons, 2009
Polarization effects in nitride semiconductors and device structures
H Morkoç, R Cingolani, B Gil
Material Research Innovations 3, 97-106, 1999
ZnO devices and applications: a review of current status and future prospects
Ü Özgür, D Hofstetter, H Morkoc
Proceedings of the IEEE 98 (7), 1255-1268, 2010
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
G Martin, A Botchkarev, A Rockett, H Morkoc
Applied Physics Letters 68 (18), 2541-2543, 1996
Ferromagnetism of ZnO and GaN: a review
C Liu, F Yun, H Morkoc
Journal of Materials Science: Materials in Electronics 16, 555-597, 2005
Excitonic fine structure and recombination dynamics in single-crystalline
A Teke, Ü Özgür, S Doğan, X Gu, H Morkoç, B Nemeth, J Nause, ...
Physical Review B—Condensed Matter and Materials Physics 70 (19), 195207, 2004
Emerging gallium nitride based devices
SN Mohammad, AA Salvador, H Morkoc
Proceedings of the IEEE 83 (10), 1306-1355, 1995
Transparent conducting oxides for electrode applications in light emitting and absorbing devices
H Liu, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç
Superlattices and Microstructures 48 (5), 458-484, 2010
Gallium arsenide and other compound semiconductors on silicon
SF Fang, K Adomi, S Iyer, H Morkoc, H Zabel, C Choi, N Otsuka
Journal of Applied Physics 68 (7), R31-R58, 1990
Folded acoustic and quantized optic phonons in (GaAl) As superlattices
C Colvard, TA Gant, MV Klein, R Merlin, R Fischer, H Morkoc, AC Gossard
Physical Review B 31 (4), 2080, 1985
Progress and prospects of group-III nitride semiconductors
SN Mohammad, H Morkoç
Progress in quantum electronics 20 (5-6), 361-525, 1996
" Dressed excitons" in a multiple-quantum-well structure: evidence for an optical Stark effect with femtosecond response time
A Mysyrowicz, D Hulin, A Antonetti, A Migus, WT Masselink, H Morkoc
Physical review letters 56 (25), 2748, 1986
Very low resistance multilayer Ohmic contact to n‐GaN
Z Fan, SN Mohammad, W Kim, Ö Aktas, AE Botchkarev, H Morkoç
Applied Physics Letters 68 (12), 1672-1674, 1996
Low resistance ohmic contacts on wide band‐gap GaN
ME Lin, Z Ma, FY Huang, ZF Fan, LH Allen, H Morkoc
Applied Physics Letters 64 (8), 1003-1005, 1994
Processing, structure, properties, and applications of PZT thin films
N Izyumskaya, YI Alivov, SJ Cho, H Morkoç, H Lee, YS Kang
Critical reviews in solid state and materials sciences 32 (3-4), 111-202, 2007
Microwave ferrites, part 1: fundamental properties
Ü Özgür, Y Alivov, H Morkoç
Journal of materials science: Materials in electronics 20, 789-834, 2009
An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy
S Strite, J Ruan, Z Li, A Salvador, H Chen, DJ Smith, WJ Choyke, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
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