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Farbod Ebrahimi
Farbod Ebrahimi
Offworld Inc.
Verified email at offworld.ai
Title
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Cited by
Year
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ...
Applied Physics Letters 108 (1), 2016
2452016
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
1852015
SPICE macromodel of spin-torque-transfer-operated magnetic tunnel junctions
JD Harms, F Ebrahimi, X Yao, JP Wang
IEEE transactions on electron devices 57 (6), 1425-1430, 2010
1322010
Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory
S Wang, H Lee, F Ebrahimi, PK Amiri, KL Wang, P Gupta
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
1192016
Magnetic tunnel junction-based spintronic logic units operated by spin transfer torque
X Yao, J Harms, A Lyle, F Ebrahimi, Y Zhang, JP Wang
IEEE Transactions on Nanotechnology 11 (1), 120-126, 2011
952011
Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo| CoFeB| MgO structures
X Li, G Yu, H Wu, PV Ong, K Wong, Q Hu, F Ebrahimi, P Upadhyaya, ...
Applied Physics Letters 107 (14), 2015
712015
Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction
H Lee, F Ebrahimi, PK Amiri, KL Wang
AIP Advances 7 (5), 2017
592017
Write error rate and read disturbance in electric-field-controlled magnetic random-access memory
C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ...
IEEE Magnetics Letters 8, 1-5, 2016
592016
Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation
L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao
IEEE Electron Device Letters 39 (3), 440-443, 2018
412018
Control of spin-wave damping in YIG using spin currents from topological insulators
A Navabi, Y Liu, P Upadhyaya, K Murata, F Ebrahimi, G Yu, B Ma, Y Rao, ...
Physical review applied 11 (3), 034046, 2019
372019
Analysis and compact modeling of magnetic tunnel junctions utilizing voltage-controlled magnetic anisotropy
H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Transactions on Magnetics 54 (4), 1-9, 2018
362018
In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions
C Grezes, A Rojas Rozas, F Ebrahimi, JG Alzate, X Cai, JA Katine, ...
AIP Advances 6 (7), 2016
302016
Low-power, high-density spintronic programmable logic with voltage-gated spin Hall effect in magnetic tunnel junctions
H Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Magnetics Letters 7, 1-5, 2016
302016
Predictive materials design of magnetic random-access memory based on nanoscale atomic structure and element distribution
X Li, T Sasaki, C Grezes, D Wu, K Wong, C Bi, PV Ong, F Ebrahimi, G Yu, ...
Nano letters 19 (12), 8621-8629, 2019
272019
A spintronic voltage-controlled stochastic oscillator for event-driven random sampling
H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Electron Device Letters 38 (2), 281-284, 2016
222016
A word line pulse circuit technique for reliable magnetoelectric random access memory
H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (7 …, 2017
212017
Communication between magnetic tunnel junctions using spin-polarized current for logic applications
A Lyle, X Yao, F Ebrahimi, J Harms, JP Wang
IEEE transactions on magnetics 46 (6), 2216-2219, 2010
212010
Analog to stochastic bit stream converter utilizing voltage-assisted spin Hall effect
H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Electron Device Letters 38 (9), 1343-1346, 2017
192017
Source line sensing in magneto-electric random-access memory to reduce read disturbance and improve sensing margin
H Lee, C Grezes, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Magnetics Letters 7, 1-5, 2016
172016
Array-level analysis of magneto-electric random-access memory for high-performance embedded applications
H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Magnetics Letters 8, 1-5, 2017
152017
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