| Zener model description of ferromagnetism in zinc-blende magnetic semiconductors T Dietl, H Ohno, F Matsukura, J Cibert, D Ferrand science 287 (5455), 1019-1022, 2000 | 9861 | 2000 |
| Making nonmagnetic semiconductors ferromagnetic H Ohno science 281 (5379), 951-956, 1998 | 6185 | 1998 |
| A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction S Ikeda, K Miura, H Yamamoto, K Mizunuma, HD Gan, M Endo, S Kanai, ... Nature materials 9 (9), 721-724, 2010 | 4080 | 2010 |
| Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device T Sugihara, H Ohno, M Kawasaki US Patent 8,093,589, 2012 | 3991 | 2012 |
| Thin film transistor and matrix display device M Kawasaki, H Ohno, K Kobayashi, I Sakono US Patent 6,563,174, 2003 | 3895 | 2003 |
| Transistor and semiconductor device M Kawasaki, H Ohno US Patent 6,727,522, 2004 | 3879 | 2004 |
| Electrical spin injection in a ferromagnetic semiconductor heterostructure Y Ohno, DK Young, B Beschoten, F Matsukura, H Ohno, DD Awschalom Nature 402 (6763), 790-792, 1999 | 3267 | 1999 |
| (Ga, Mn) As: a new diluted magnetic semiconductor based on GaAs H Ohno, A Shen, F Matsukura, A Oiwa, A Endo, S Katsumoto, Y Iye Applied Physics Letters 69 (3), 363-365, 1996 | 3076 | 1996 |
| Electric-field control of ferromagnetism H Ohno, D Chiba, F Matsukura, T Omiya, E Abe, T Dietl, Y Ohno, K Ohtani Nature 408 (6815), 944-946, 2000 | 2638 | 2000 |
| Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO A Tsukazaki, A Ohtomo, T Onuma, M Ohtani, T Makino, M Sumiya, ... Nature materials 4 (1), 42-46, 2005 | 2617 | 2005 |
| Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors T Dietl, H Ohno, F Matsukura Physical Review B 63 (19), 195205, 2001 | 2034 | 2001 |
| Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕ MgO∕ CoFeB pseudo-spin-valves annealed at high temperature S Ikeda, J Hayakawa, Y Ashizawa, YM Lee, K Miura, H Hasegawa, ... Applied Physics Letters 93 (8), 2008 | 1980 | 2008 |
| Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors H Ohno, H Munekata, T Penney, S Von Molnar, LL Chang Physical Review Letters 68 (17), 2664, 1992 | 1528 | 1992 |
| Transport properties and origin of ferromagnetism in (Ga, Mn) As F Matsukura, H Ohno, A Shen, Y Sugawara Physical Review B 57 (4), R2037, 1998 | 1514 | 1998 |
| Diluted magnetic III-V semiconductors H Munekata, H Ohno, S Von Molnar, A Segmüller, LL Chang, L Esaki Physical Review Letters 63 (17), 1849, 1989 | 1461 | 1989 |
| Current-induced torques in magnetic materials A Brataas, AD Kent, H Ohno Nature materials 11 (5), 372-381, 2012 | 1376 | 2012 |
| Spintronics based random access memory: a review S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami, SN Piramanayagam Materials Today 20 (9), 530-548, 2017 | 1148 | 2017 |
| Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system S Fukami, C Zhang, S DuttaGupta, A Kurenkov, H Ohno Nature materials 15 (5), 535-541, 2016 | 1124 | 2016 |
| Properties of ferromagnetic III–V semiconductors H Ohno Journal of magnetism and magnetic materials 200 (1-3), 110-129, 1999 | 1097 | 1999 |
| Dilute ferromagnetic semiconductors: Physics and spintronic structures T Dietl, H Ohno Reviews of Modern Physics 86 (1), 187-251, 2014 | 1069 | 2014 |
