Daoqian Zhu (朱道乾)
Daoqian Zhu (朱道乾)
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Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ...
Nature electronics 1 (11), 582-588, 2018
Spintronics for energy-efficient computing: An overview and outlook
Z Guo, J Yin, Y Bai, D Zhu, K Shi, G Wang, K Cao, W Zhao
Proceedings of the IEEE 109 (8), 1398-1417, 2021
High-density NAND-like spin transfer torque memory with spin orbit torque erase operation
Z Wang, L Zhang, M Wang, Z Wang, D Zhu, Y Zhang, W Zhao
IEEE Electron Device Letters 39 (3), 343-346, 2018
A compact skyrmionic leaky–integrate–fire spiking neuron device
X Chen, W Kang, D Zhu, X Zhang, N Lei, Y Zhang, Y Zhou, W Zhao
Nanoscale 10 (13), 6139-6146, 2018
Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque
S Peng, D Zhu, W Li, H Wu, AJ Grutter, DA Gilbert, J Lu, D Xiong, W Cai, ...
Nature Electronics 3 (12), 757-764, 2020
Proposal of toggle spin torques magnetic RAM for ultrafast computing
Z Wang, H Zhou, M Wang, W Cai, D Zhu, JO Klein, W Zhao
IEEE Electron Device Letters 40 (5), 726-729, 2019
Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices
S Peng, D Zhu, J Zhou, B Zhang, A Cao, M Wang, W Cai, K Cao, W Zhao
Advanced Electronic Materials 5 (8), 1900134, 2019
Stochastic computing implemented by skyrmionic logic devices
H Zhang, D Zhu, W Kang, Y Zhang, W Zhao
Physical Review Applied 13 (5), 054049, 2020
Antiferromagnetic spintronics: An overview and outlook
D Xiong, Y Jiang, K Shi, A Du, Y Yao, Z Guo, D Zhu, K Cao, S Peng, ...
Fundamental Research 2 (4), 522-534, 2022
Voltage-driven high-speed skyrmion motion in a skyrmion-shift device
Y Liu, N Lei, C Wang, X Zhang, W Kang, D Zhu, Y Zhou, X Liu, Y Zhang, ...
Physical Review Applied 11 (1), 014004, 2019
Threshold current density for perpendicular magnetization switching through spin-orbit torque
D Zhu, W Zhao
Physical Review Applied 13 (4), 044078, 2020
Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing
X Zhang, W Cai, M Wang, B Pan, K Cao, M Guo, T Zhang, H Cheng, S Li, ...
Advanced Science 8 (10), 2004645, 2021
Skyrmion racetrack memory with random information update/deletion/insertion
D Zhu, W Kang, S Li, Y Huang, X Zhang, Y Zhou, W Zhao
IEEE Transactions on Electron Devices 65 (1), 87-95, 2017
Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques
W Cai, K Shi, Y Zhuo, D Zhu, Y Huang, J Yin, K Cao, Z Wang, Z Guo, ...
IEEE Electron Device Letters 42 (5), 704-707, 2021
Skyrmion dynamics in width-varying nanotracks and implications for skyrmionic applications
X Chen, W Kang, D Zhu, X Zhang, N Lei, Y Zhang, Y Zhou, W Zhao
Applied Physics Letters 111 (20), 2017
Modulation of field-like spin orbit torque in heavy metal/ferromagnet heterostructures
Z Wang, H Cheng, K Shi, Y Liu, J Qiao, D Zhu, W Cai, X Zhang, S Eimer, ...
Nanoscale 12 (28), 15246-15251, 2020
Field-free spin–orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy
Z Wang, Z Li, M Wang, B Wu, D Zhu, W Zhao
Nanotechnology 30 (37), 375202, 2019
Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions
H Cheng, J Chen, S Peng, B Zhang, Z Wang, D Zhu, K Shi, S Eimer, ...
Advanced Electronic Materials 6 (8), 2000271, 2020
Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3
Z Zheng, Y Zhang, D Zhu, K Zhang, X Feng, Y He, L Chen, Z Zhang, D Liu, ...
Chinese physics B 29 (7), 078505, 2020
Spin–orbit torque driven multi-level switching in He+ irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy
X Zhao, Y Liu, D Zhu, M Sall, X Zhang, H Ma, J Langer, B Ocker, S Jaiswal, ...
Applied Physics Letters 116 (24), 2020
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