| Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ... Nature electronics 1 (11), 582-588, 2018 | 389 | 2018 |
| Spintronics for energy-efficient computing: An overview and outlook Z Guo, J Yin, Y Bai, D Zhu, K Shi, G Wang, K Cao, W Zhao Proceedings of the IEEE 109 (8), 1398-1417, 2021 | 195 | 2021 |
| Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque S Peng, D Zhu, W Li, H Wu, AJ Grutter, DA Gilbert, J Lu, D Xiong, W Cai, ... Nature Electronics 3 (12), 757-764, 2020 | 153 | 2020 |
| High-density NAND-like spin transfer torque memory with spin orbit torque erase operation Z Wang, L Zhang, M Wang, Z Wang, D Zhu, Y Zhang, W Zhao IEEE Electron Device Letters 39 (3), 343-346, 2018 | 151 | 2018 |
| A compact skyrmionic leaky–integrate–fire spiking neuron device X Chen, W Kang, D Zhu, X Zhang, N Lei, Y Zhang, Y Zhou, W Zhao Nanoscale 10 (13), 6139-6146, 2018 | 128 | 2018 |
| Antiferromagnetic spintronics: An overview and outlook D Xiong, Y Jiang, K Shi, A Du, Y Yao, Z Guo, D Zhu, K Cao, S Peng, ... Fundamental Research 2 (4), 522-534, 2022 | 95 | 2022 |
| Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices S Peng, D Zhu, J Zhou, B Zhang, A Cao, M Wang, W Cai, K Cao, W Zhao Advanced Electronic Materials 5 (8), 1900134, 2019 | 84 | 2019 |
| Proposal of toggle spin torques magnetic RAM for ultrafast computing Z Wang, H Zhou, M Wang, W Cai, D Zhu, JO Klein, W Zhao IEEE Electron Device Letters 40 (5), 726-729, 2019 | 84 | 2019 |
| Stochastic computing implemented by skyrmionic logic devices H Zhang, D Zhu, W Kang, Y Zhang, W Zhao Physical Review Applied 13 (5), 054049, 2020 | 67 | 2020 |
| Voltage-driven high-speed skyrmion motion in a skyrmion-shift device Y Liu, N Lei, C Wang, X Zhang, W Kang, D Zhu, Y Zhou, X Liu, Y Zhang, ... Physical Review Applied 11 (1), 014004, 2019 | 67 | 2019 |
| Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing X Zhang, W Cai, M Wang, B Pan, K Cao, M Guo, T Zhang, H Cheng, S Li, ... Advanced Science 8 (10), 2004645, 2021 | 58 | 2021 |
| Threshold current density for perpendicular magnetization switching through spin-orbit torque D Zhu, W Zhao Physical Review Applied 13 (4), 044078, 2020 | 56 | 2020 |
| Skyrmion racetrack memory with random information update/deletion/insertion D Zhu, W Kang, S Li, Y Huang, X Zhang, Y Zhou, W Zhao IEEE Transactions on Electron Devices 65 (1), 87-95, 2017 | 49 | 2017 |
| Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques W Cai, K Shi, Y Zhuo, D Zhu, Y Huang, J Yin, K Cao, Z Wang, Z Guo, ... IEEE Electron Device Letters 42 (5), 704-707, 2021 | 48 | 2021 |
| Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions A Du, D Zhu, K Cao, Z Zhang, Z Guo, K Shi, D Xiong, R Xiao, W Cai, J Yin, ... Nature Electronics 6 (6), 425-433, 2023 | 42 | 2023 |
| Skyrmion dynamics in width-varying nanotracks and implications for skyrmionic applications X Chen, W Kang, D Zhu, X Zhang, N Lei, Y Zhang, Y Zhou, W Zhao Applied Physics Letters 111 (20), 2017 | 42 | 2017 |
| Modulation of field-like spin orbit torque in heavy metal/ferromagnet heterostructures Z Wang, H Cheng, K Shi, Y Liu, J Qiao, D Zhu, W Cai, X Zhang, S Eimer, ... Nanoscale 12 (28), 15246-15251, 2020 | 39 | 2020 |
| Field-free spin–orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy Z Wang, Z Li, M Wang, B Wu, D Zhu, W Zhao Nanotechnology 30 (37), 375202, 2019 | 39 | 2019 |
| Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions H Cheng, J Chen, S Peng, B Zhang, Z Wang, D Zhu, K Shi, S Eimer, ... Advanced Electronic Materials 6 (8), 2000271, 2020 | 36 | 2020 |
| Experimental demonstration of NAND-like spin-torque memory unit K Shi, W Cai, Y Zhuo, D Zhu, Y Huang, J Yin, K Cao, Z Wang, Z Guo, ... IEEE Electron Device Letters 42 (4), 513-516, 2021 | 31 | 2021 |
