Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon J Kolodzey, EA Chowdhury, TN Adam, G Qui, I Rau, JO Olowolafe, ...
IEEE Transactions on Electron Devices 47 (1), 121-128, 2000
275 2000 Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films ZE Smith, V Chu, K Shepard, S Aljishi, D Slobodin, J Kolodzey, S Wagner, ...
Applied physics letters 50 (21), 1521-1523, 1987
210 1987 Room temperature operation of epitaxially grown SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
209 1998 Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy JP Gupta, N Bhargava, S Kim, T Adam, J Kolodzey
Applied physics letters 102 (25), 2013
128 2013 Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy J Kolodzey, PA O’neil, S Zhang, BA Orner, K Roe, KM Unruh, CP Swann, ...
Applied physics letters 67 (13), 1865-1867, 1995
127 1995 Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy N Bhargava, M Coppinger, J Prakash Gupta, L Wielunski, J Kolodzey
Applied Physics Letters 103 (4), 2013
117 2013 Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors J Piprek, T Troger, B Schroter, J Kolodzey, CS Ih
IEEE Photonics Technology Letters 10 (1), 81-83, 1998
112 1998 The electrical properties of MIS capacitors with AlN gate dielectrics T Adam, J Kolodzey, CP Swann, MW Tsao, JF Rabolt
Applied Surface Science 175, 428-435, 2001
102 2001 Fiber optics light switch JS Kolodzey, GR Stilwell Jr, EC Uberbacher
US Patent 4,245,886, 1981
100 1981 Terahertz electroluminescence from boron-doped silicon devices TN Adam, RT Troeger, SK Ray, PC Lv, J Kolodzey
Applied physics letters 83 (9), 1713-1715, 2003
75 2003 Electroluminescence at 7 terahertz from phosphorus donors in silicon PC Lv, RT Troeger, TN Adam, S Kim, J Kolodzey, IN Yassievich, ...
Applied physics letters 85 (1), 22-24, 2004
74 2004 Carbon incorporation in Si1− yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source MW Dashiell, LV Kulik, D Hits, J Kolodzey, G Watson
Applied Physics Letters 72 (7), 833-835, 1998
74 1998 Semiconductor device with controlled negative differential resistance characteristic JP Leburton, J Kolodzey
US Patent 5,021,841, 1991
74 1991 Initial stages of trapping in a-Si: H observed by femtosecond spectroscopy PM Fauchet, D Hulin, A Migus, A Antonetti, J Kolodzey, S Wagner
Physical review letters 57 (19), 2438, 1986
73 1986 Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
72 2000 Optical and electronic properties of SiGeC alloys grown on Si substrates J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ...
Journal of crystal growth 157 (1-4), 386-391, 1995
72 1995 Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
70 2001 Tunnel Barrier Enhanced Voltage Signal Generated by Magnetization Precession<? format?> of a Single Ferromagnetic Layer T Moriyama, R Cao, X Fan, G Xuan, BK Nikolić, Y Tserkovnyak, ...
Physical review letters 100 (6), 067602, 2008
66 2008 Electrical and optical properties of Ge–implanted 4H–SiC G Katulka, C Guedj, J Kolodzey, RG Wilson, C Swann, MW Tsao, J Rabolt
Applied physics letters 74 (4), 540-542, 1999
56 1999 Thermally oxidized AlN thin films for device insulators EA Chowdhury, J Kolodzey, JO Olowolafe, G Qiu, G Katulka, D Hits, ...
Applied physics letters 70 (20), 2732-2734, 1997
56 1997 