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Praneeth Ranga
Praneeth Ranga
Bestätigte E-Mail-Adresse bei utah.edu
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Zitiert von
Zitiert von
Jahr
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy
IEEE Electron Device Letters 42 (8), 1140-1143, 2021
1302021
Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
A Bhattacharyya, P Ranga, S Roy, J Ogle, L Whittaker-Brooks, ...
Applied Physics Letters 117 (14), 2020
792020
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ...
IEEE Electron Device Letters 42 (9), 1272-1275, 2021
742021
Si-doped β-(Al0. 26Ga0. 74) 2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy
P Ranga, A Rishinaramangalam, J Varley, A Bhattacharyya, D Feezell, ...
Applied Physics Express 12 (11), 111004, 2019
722019
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2
A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ...
Applied Physics Express 15 (6), 061001, 2022
632022
Delta-doped β-Ga 2 O 3 thin films and β-(Al 0.26 Ga 0.74) 2 O 3/β-Ga 2 O 3 heterostructures grown by metalorganic vapor-phase epitaxy
P Ranga, A Bhattacharyya, A Rishinaramangalam, YK Ooi, MA Scarpulla, ...
Applied Physics Express, 2020
612020
Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO3/ε-Ga2O3 heterostructures
P Ranga, SB Cho, R Mishra, S Krishnamoorthy
Applied Physics Express 13 (6), 061009, 2020
572020
130 mA mm− 1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
A Bhattacharyya, S Roy, P Ranga, D Shoemaker, Y Song, JS Lundh, ...
Applied Physics Express 14 (7), 076502, 2021
542021
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels
P Ranga, A Bhattacharyya, A Chmielewski, S Roy, R Sun, MA Scarpulla, ...
Applied Physics Express 14 (2), 025501, 2021
542021
Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric
A Bhattacharyya, P Ranga, M Saleh, S Roy, MA Scarpulla, KG Lynn, ...
IEEE Journal of the Electron Devices Society 8, 286-294, 2020
522020
Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors
B Chatterjee, Y Song, JS Lundh, Y Zhang, Z Xia, Z Islam, J Leach, ...
Applied Physics Letters 117 (15), 2020
442020
The anisotropic quasi-static permittivity of single-crystal β-Ga2O3 measured by terahertz spectroscopy
P Gopalan, S Knight, A Chanana, M Stokey, P Ranga, MA Scarpulla, ...
Applied Physics Letters 117 (25), 2020
422020
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
A Bhattacharyya, S Roy, P Ranga, C Peterson, S Krishnamoorthy
IEEE Electron Device Letters 43 (10), 1637-1640, 2022
372022
Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films
Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ...
ACS applied materials & interfaces 13 (32), 38477-38490, 2021
322021
Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films
J Cooke, P Ranga, J Jesenovec, JS McCloy, S Krishnamoorthy, ...
Scientific Reports 12 (1), 3243, 2022
262022
In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
S Roy, AE Chmielewski, A Bhattacharyya, P Ranga, R Sun, MA Scarpulla, ...
Advanced Electronic Materials 7 (11), 2100333, 2021
262021
Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy
P Ranga, A Bhattacharyya, A Chmielewski, S Roy, N Alem, ...
Applied Physics Letters 117 (17), 2020
252020
N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium
P Ranga, A Bhattacharyya, L Whittaker-Brooks, MA Scarpulla, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
212021
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ...
APL Materials 11 (2), 2023
202023
Compensation in (2¯ 01) homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy
BA Eisner, P Ranga, A Bhattacharyya, S Krishnamoorthy, MA Scarpulla
Journal of Applied Physics 128 (19), 2020
182020
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