| Power conversion with SiC devices at extremely high ambient temperatures T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ... IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007 | 384 | 2007 |
| Silicon carbide power MOSFET model and parameter extraction sequence TR McNutt, AR Hefner, HA Mantooth, D Berning, SH Ryu IEEE Transactions on Power Electronics 22 (2), 353-363, 2007 | 307 | 2007 |
| Extreme environment electronics JD Cressler, HA Mantooth CRC Press, 2017 | 285 | 2017 |
| Wide bandgap technologies and their implications on miniaturizing power electronic systems HA Mantooth, MD Glover, P Shepherd IEEE Journal of emerging and selected topics in Power Electronics 2 (3), 374-385, 2014 | 255 | 2014 |
| Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments J Hornberger, AB Lostetter, KJ Olejniczak, T McNutt, SM Lal, A Mantooth 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No. 04TH8720) 4, 2538-2555, 2004 | 202 | 2004 |
| Modeling of wide bandgap power semiconductor devices—Part I HA Mantooth, K Peng, E Santi, JL Hudgins IEEE Transactions on Electron Devices 62 (2), 423-433, 2014 | 188 | 2014 |
| Transient electrothermal simulation of power semiconductor devices B Du, JL Hudgins, E Santi, AT Bryant, PR Palmer, HA Mantooth IEEE Transactions on power electronics 25 (1), 237-248, 2009 | 180 | 2009 |
| Datasheet driven silicon carbide power MOSFET model M Mudholkar, S Ahmed, MN Ericson, SS Frank, CL Britton, HA Mantooth IEEE Transactions on Power Electronics 29 (5), 2220-2228, 2013 | 159 | 2013 |
| Electrothermal simulation of an IGBT PWM inverter HA Mantooth, AR Hefner IEEE Transactions on Power Electronics 12 (3), 474-484, 1997 | 156 | 1997 |
| Overview of Modulation Strategies for LLC Resonant Converter Y Wei, Q Luo, A Mantooth IEEE Transactions on Power Electronics 35 (10), 10423-10443, 2020 | 140 | 2020 |
| A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes B Ozpineci, MS Chinthavali, LM Tolbert, AS Kashyap, HA Mantooth IEEE Transactions on industry applications 45 (1), 278-285, 2009 | 138 | 2009 |
| Modeling with an analog hardware description language HA Mantooth, M Fiegenbaum Kluwer Academic, 1994 | 121 | 1994 |
| Assessing the impact of SiC MOSFETs on converter interfaces for distributed energy resources JA Carr, D Hotz, JC Balda, HA Mantooth, A Ong, A Agarwal IEEE Transactions on Power Electronics 24 (1), 260-270, 2009 | 104 | 2009 |
| Adaptive multi-level active gate drivers for SiC power devices S Zhao, A Dearien, Y Wu, C Farnell, AU Rashid, F Luo, HA Mantooth IEEE Transactions on Power Electronics 35 (2), 1882-1898, 2019 | 102 | 2019 |
| Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator TR McNutt, AR Hefner, HA Mantooth, J Duliere, DW Berning, R Singh IEEE Transactions on Power Electronics 19 (3), 573-581, 2004 | 90 | 2004 |
| A review of switching slew rate control for silicon carbide devices using active gate drivers S Zhao, X Zhao, Y Wei, Y Zhao, HA Mantooth IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020 | 87 | 2020 |
| A solution to press-pack packaging of SiC MOSFETS N Zhu, HA Mantooth, D Xu, M Chen, MD Glover IEEE Transactions on Industrial Electronics 64 (10), 8224-8234, 2017 | 87 | 2017 |
| High performance silicon carbide power packaging—past trends, present practices, and future directions S Seal, HA Mantooth Energies 10 (3), 341, 2017 | 81 | 2017 |
| Modeling of wide-bandgap power semiconductor devices—Part II E Santi, K Peng, HA Mantooth, JL Hudgins IEEE Transactions on Electron Devices 62 (2), 434-442, 2014 | 80 | 2014 |
| Performance requirements for power MOSFET models I Budihardjo, PO Lauritzen, HA Mantooth Proceedings of 1994 Power Electronics Specialist Conference-PESC'94 1, 69-76, 1994 | 80 | 1994 |
Juan BaldaUniversity of ArkansasBestätigte E-Mail-Adresse bei uark.edu
